Cromosomal location of four genes encoding Class III peroxidases in wheat

In a previous work, deduced amino acid sequences from twenty wheat peroxidase genes were assigned to seven groups designated as TaPrx108 to TaPrx114. Some of these apoplastic peroxidases have previously shown to play different roles in the plant defense responses to infection by the cereal cyst nematode Heterodera avenae. In the present study, PCR marker analysis using Sears’s aneuploid wheat lines cv. ‘Chinese Spring’ was used to locate four genes encoding peroxidase isozymes. The TaPrx111-A, TaPrx112-D and TaPrx113-F genes were located on the short arm of chromosome 2B and the TaPrx109-C on the long arm of chromosome 1B. These results would agree with the synteny between wheat and rice chromosomes previously established in other studies.

Expresión de la resistencia en plantas de tomate a nematodos formadores de nódulos (Meloidogyne javanica)

La resistencia genética mediada por los genes R es uno de los sistemas de defensa de las plantas frente a patógenos y se activa una vez que los patógenos han superado la defensa basal que otorgan la cutícula y pared celular. Los mecanismos de resistencia genética se inician a su vez, por el reconocimiento de productos derivados de genes de avirulencia de los patógenos (avr) por parte de las proteínas R. Tanto la respuesta de defensa basal como la respuesta de defensa por genes R están influenciadas por patrones de regulación hormonal, que incluye a las principales hormonas vegetales ácido salicílico (SA), ácido jasmónico (JA) y etileno (ET). En tomate (Solanum lycopersicum) uno de los genes R es el gen MiG1, que confiere resistencia a nematodos formadores de nódulos (Meloidogyne javanica, M. incognita y M. arenaria). Uno de los eventos más importantes que caracterizan a la respuesta de resistencia es la reacción hipersensible (HR), que está mediada por la activación temprana de una serie de sistemas enzimáticos, entre los que destaca el de las peroxidasas (PRXs) Clase III. Su función es importante tanto para limitar el establecimiento y expansión del nematodo, al generar ambientes altamente tóxicos por su contribución en la producción masiva de ROS, como por su implicación en la síntesis y depósito de lignina generando barreras estructurales en el sitio de infección. Además de estos mecanismos de defensa asociados a la resistencia constitutiva, las plantas pueden desarrollar resistencia sistémica adquirida (SAR) que en la naturaleza ocurre, en ocasiones, en una fase posterior a que la planta haya sufrido el ataque de un patógeno. Así mismo hay diferentes productos de origen químico como el benzotiadiazol o BTH (ácido S-metil benzol-(1,2,3)-tiadiozole-7-carbónico ester) que pueden generar esta misma respuesta SAR. Como resultado, la planta adquiere resistencia sistémica frente a nuevos ataques de patógenos. En este contexto, el presente trabajo aborda en primer lugar el análisis comparativo, mediante microarrays de oligonucleótidos, de los transcriptomas de los sistemas radicales de plantas de tomate de 8 semanas de edad de dos variedades, una portadora del gen de resistencia MiG1 (Motelle) y otra carente del mismo y, por tanto, susceptible (Moneymaker), antes y después de la infección por M. javanica. Previo a la infección se observó que la expresión de un gran número de transcritos era más acusada en la variedad resistente que en la susceptible, entre ellos el propio gen MiG1 o los genes PrG1 (o P4), LEJA1 y ER24, lo que indica que, en ausencia de infección, las rutas hormonales del SA, JA y ET están más activas en la raíz de la variedad resistente. Por el contrario, un número mucho menor de transcritos presentaban su expresión más reducida en Motelle que en Moneymaker, destacando un gen de señalización para sintetizar la hormona giberelina (GA). La infección por M. javanica causa importantes cambios transcripcionales en todo el sistema radical que modifican sustancialmente las diferencias basales entre plantas Motelle y Moneymaker, incluida la sobreexpresión en la variedad resistente de los transcritos de MiG1, que se reduce parcialmente, mientras que las rutas hormonales del SA y el JA continuan más activas que en la susceptible (evidente por los genes PrG1 y LEJA1). Además, los cambios asociados a la infección del nematodo se evidencian por las grandes diferencias entre los dos tiempos post-infección considerados, de tal forma que en la fase temprana (2 dpi) de la interacción compatible predomina la sobreexpresión de genes de pared celular y en la tardía (12 dpi) los relacionados con el ARN. En el análisis de la interacción incompatible, aunque también hay muchas diferencias entre ambas fases, hay que destacar la expresión diferencial común de los genes loxA y mcpi (sobrexpresados) y del gen loxD (reprimido) por su implicación en defensa en otras interacciones planta-patógeno. Cabe destacar que entre las interacciones compatible e incompatible hubo muy pocos genes en común. En la etapa temprana de la interacción compatible destacó la activación de genes de pared celular y la represión de la señalización; en cambio, en la interacción incompatible hubo proteínas principalmente implicadas en defensa. A los 12 días, en la interacción compatible los genes relacionados con el ARN y la pared celular se sobreexpresaban principalmente, y se reprimían los de proteínas y transporte, mientras que en la incompatible se sobreexpresaron los relacionados con el estrés, el metabolismo secundario y el de hormonas y se reprimieron los de ARN, señalización, metabolismo de hormonas y proteínas. Por otra parte, la técnica de silenciamiento génico VIGS reveló que el gen TGA 1a está implicado en la resistencia mediada por el gen MiG1a M. javanica. Así mismo se evaluó el transcriptoma de todo el sistema radical de la variedad susceptible tras la aplicación del inductor BTH, y se comparó con el transcriptoma de la resistente. Los resultados obtenidos revelan que el tratamiento con BTH en hojas de Moneymaker ejerce notables cambios transcripcionales en la raíz; entre otros, la activación de factores de transcripción Myb (THM16 y THM 27) y del gen ACC oxidasa. Las respuestas inducidas por el BTH parecen ser de corta duración ya que no hubo transcritos diferenciales comunes a las dos fases temporales de la infección comparadas (2 y 12 dpi). El transcriptoma de Moneymaker tratada con BTH resultó ser muy diferente al de la variedad resistente Motelle, ambas sin infectar, destacando la mayor expresión en el primero del gen LeEXP2, una expansina relacionada con defensa frente a nematodos. Las respuestas inducidas por los nematodos en Moneymaker-BTH también fueron muy distintas a las observadas previamente en la interacción incompatible mediada por MiG1, pues sólo se detectaron 2 genes sobreexpresados comunes a ambos eventos. Finalmente, se abordó el estudio de la expresión diferencial de genes que codifican PRXs y su relación con la resistencia en la interacción tomate/M. javanica. Para ello, se realizó en primer lugar el estudio del análisis del transcriptoma de tomate de la interacción compatible, obtenido en un estudio previo a partir de tejido radical infectado en distintos tiempos de infección. Se han identificado 16 unigenes de PRXs con expresión diferencial de los cuales 15 se relacionan por primera vez con la respuesta a la infección de nematodos. La mayoría de los genes de PRXs identificados, 11, aparecen fuertemente reprimidos en el sitio de alimentación, en las células gigantes (CG). Dada la implicación directa de las PRXs en la activación del mecanismo de producción de ROS, la supresión de la expresión génica local de genes de PRXs en el sitio de establecimiento y alimentación pone de manifiesto la capacidad del nematodo para modular y superar la respuesta de defensa de la planta de tomate en la interacción compatible. Posteriormente, de estos genes identificados se han elegido 4: SGN-U143455, SGN-U143841 y SGN-U144042 reprimidos en el sitio de infección y SGN-U144671 inducido, cuyos cambios de expresión se han determinado mediante análisis por qRT-PCR y de hibridación in situ en dos tiempos de infección (2 dpi y 4 dpi) y en distintos tejidos radicales de tomate resistente y susceptible. Los patrones de expresión obtenidos demuestran que en la interacción incompatible la transcripción global de los 4 genes estudiados se dispara en la etapa más temprana en el sitio de infección, detectándose la localización in situ de transcritos en el citoplasma de las células corticales de la zona meristemática afectadas por el nematodo. A 4 dpi se observó que los niveles de expresión en el sitio de infección cambian de tendencia y los genes SGN-U144671 y SGN-U144042 se reprimen significativamente. Los diferentes perfiles de expresión de los genes PRXs en los dos tiempos de infección sugieren que su inducción en las primeras 48 horas es crucial para la respuesta de defensa relacionada con la resistencia frente a la invasión del nematodo. Por último, al analizar el tejido radical sistémico, se detectó una inducción significativa de la expresión en la fase más tardía de la infección del gen SGN-U144042 en el genotipo susceptible y del SGN-U143841 en ambos genotipos. En este estudio se describe por primera vez la inducción de la expresión sistémica de genes de PRXs en tomate durante la interacción compatible e incompatible con M. javanica lo que sugiere su posible implicación funcional en la respuesta de defensa SAR activada por la infección previa del nematodo. ABSTRACT Plants defend themselves from pathogens by constitutive and/or induced defenses. A common type of induced defense involves plant resistance genes (R), which are normally activated in response to attack by specific pathogen species. Typically, a specific plant R protein recognizes a specific pathogen avirulence (avr) compound. This initiates a complex biochemical cascade inside the plant that results in synthesis of antipathogen compounds. This response can involve chemical signaling, transcription, translation, enzymes and metabolism, and numerous plant hormones such as salicylic acid (SA), jasmonates (JA) and ethylene (ET). Induced plant defense can also activate Class III peroxidases (PRXs), which produce reactive oxygen species (ROS), regulate extracellular H2O2, and play additional roles in plant defense. R-gene activation and the resulting induced defense often remain localized in the specific tissues invaded by the plant pathogen. In other cases, the plant responds by signaling the entire plant to produce defense compounds (systemic induction). Plant defense can also be induced by the exogenous application of natural or synthetic elicitors, such as benzol-(1,2,3)-thiadiazole-7-carbothionic acid. There is much current scientific interest in R-genes and elicitors, because they might be manipulated to increase agricultural yield. Scientists also are interested in systemic induction, because this allows the entire plant to be defended. In this context, one of the aims of this investigation was the transcriptoma analysis of the root systems of two varieties of tomato, the resistant variety (Motelle) that carrier MiG1 and the susceptible (Moneymaker) without MiG1, before and after infection with M. javanica. The overexpression was more pronounced in the transcriptoma of the resistant variety compared with susceptible, before infection, including the MiG1 gene, PrG1 (or P4) genes, LEJA1 and ER24, indicating that hormone SA, JA and ET are active in the resistant variety. Moreover, GA hormone presents an opposite behavior. M. javanica infection causes significant transcriptional changes in both compatible (Moneymaker-M. javanica) and incompatible (Motelle-M. javanica) interaction. In the incompatible transcriptome root system, was notably reduced the expression of the MiG1 gene, and a continuity in the expression of the hormonal pathways of SA and JA. In other hand, transcriptional profile changes during compatible interaction were associated with nematode infection. The large differences between the two times point infection considered (2 dpi and 12 dpi) indicates an overexpression of cell wall related genes in the first phase, and conversely an overexpression of RNA genes in the late phase. Transcriptoma analysis of incompatible interaction, although there were differences between the two phases, should be highlighted the common differential gene expression: loxA and mcpi (overexpressed) and loxD gene (suppressed), as they are involved in defenses in other plant-pathogen interactions. The VIGS tool has provided evidence that TGA 1a is involved in MiG1 mediated resistance to M. javanica. Likewise, the systemic application of BTH was assessed and compared with susceptible and resistant variety. Root system transcriptoma of BTH treatment on leaves showed the activation of Myb transcription factors (THM16 and THM27), the ACC oxidase gene. and the LeEXP2 gene, encoding for an expansin enzyme, related with defense against nematodes. The activation appears to be reduced by subsequent infection and establishment of nematodes. To assist in elucidate the role of tomato PRXs in plant defence against M. javanica, the transcriptome obtained previously from isolated giant cells (GC) and galls at 3 and 7 dpi from the compatible interaction was analysed. A total of 18 different probes corresponding to 16 PRX encoding genes were differentially expressed in infection site compared to the control uninfected root tissues. Most part of them (11) was down-regulated. These results yielded a first insight on 15 of the PRX genes responding to tomato–Meloidogyne interaction and confirm that repression of PRX genes might be crucial for feeding site formation at the initial stages of infection. To study the involvement of PRX genes in resistance response, four genes have been selected: SGN-U143455, SGN-U143841 and SGN-U144042 consistently down-regulated and SGN-U144671 consistently up-regulated at infection site in compatible interaction. The expression changes were determined by qRT-PCR and in situ location at 2 dpi and 4 dpi, and in different root tissues of resistant and susceptible plants. Early upon infection (2 dpi), the transcripts levels of the four genes were strongly increased in infected tissue of resistant genotype. In situ hybridization showed transcript accumulation of them in meristem cortical cells, where the nematode made injury. The results obtained provide strong evidence that early induction of PRX genes is important for defence response of the resistance against nematode invasion. Moreover, the induction patterns of SGN-U144042 gene observed at 4 dpi in distal noninfected root tissue into the susceptible genotype and of SGN-U143841 gene in both genotypes suggest a potential involvement of PRX in the systemic defence response.

Compostabilidad de envases de bolsas de PBAT+PLA y envases rígidos de PLA mediante tecnologías de pila y túnel

Los polímeros compostables suponen en torno al 30% de los bioplásticos destinados a envasado, siendo a su vez esta aplicación el principal destino de la producción de este tipo de materiales que, en el año 2013, superó 1,6 millones de toneladas. La presente tesis aborda la biodegradación de los residuos de envases domésticos compostables en medio aerobio para dos tipos de formato y materiales, envase rígido de PLA (Clase I) y dos tipos de bolsas de PBAT+PLA (Clases II y III). Sobre esta materia se han realizado diversos estudios en escala de laboratorio pero para otro tipo de envases y biopolímeros y bajo condiciones controladas del compost con alguna proyección particularizada en plantas. La presente tesis da un paso más e investiga el comportamiento real de los envases plásticos compostables en la práctica del compostaje en tecnologías de pila y túnel, tanto a escala piloto como industrial, dentro del procedimiento y con las condiciones ambientales de instalaciones concretas. Para ello, con el método seguido, se han analizado los requisitos básicos que debe cumplir un envase compostable, según la norma UNE – EN 13432, evaluando el porcentaje de biodegradación de los envases objeto de estudio, en función de la pérdida de peso seco tras el proceso de compostaje, y la calidad del compost obtenido, mediante análisis físico-químico y de fitotoxicidad para comprobar que los materiales de estudio no aportan toxicidad. En cuanto a los niveles de biodegrabilidad, los resultados permiten concluir que los envases de Clase I se compostan adecuadamente en ambas tecnologías y que no requieren de unas condiciones de proceso muy exigentes para alcanzar niveles de biodegradación del 100%. En relación a los envases de Clase II, se puede asumir que se trata de un material que se composta adecuadamente en pila y túnel industrial pero que requiere de condiciones exigentes para alcanzar niveles de biodegradación del 100% al afectarle de forma clara la ubicación de las muestras en la masa a compostar, especialmente en el caso de la tecnología de túnel. Mientras el 90% de las muestras alcanza el 100% de biodegradación en pila industrial, tan sólo el 50% lo consigue en la tecnología de túnel a la misma escala. En cuanto a los envases de Clase III, se puede afirmar que es un material que se composta adecuadamente en túnel industrial pero que requiere de condiciones de cierta exigencia para alcanzar niveles de biodegradación del 100% al poderle afectar la ubicación de las muestras en la masa a compostar. El 75% de las muestras ensayadas en túnel a escala industrial alcanzan el 100% de biodegradación y, aunque no se ha ensayado este tipo de envase en la tecnología de pila al no disponer de muestras, cabe pensar que los resultados de biodegrabilidad que hubiera podido alcanzar habrían sido, como mínimo, los obtenidos para los envases de Clase II, al tratarse de materiales muy similares en composición. Por último, se concluye que la tecnología de pila es más adecuada para conseguir niveles de biodegradación superiores en los envases tipo bolsa de PBAT+PLA. Los resultados obtenidos permiten también sacar en conclusión que, en el diseño de instalaciones de compostaje para el tratamiento de la fracción orgánica recogida selectivamente, sería conveniente realizar una recirculación del rechazo del afino del material compostado para aumentar la probabilidad de someter este tipo de materiales a las condiciones ambientales adecuadas. Si además se realiza un triturado del residuo a la entrada del proceso, también se aumentaría la superficie específica a entrar en contacto con la masa de materia orgánica y por tanto se favorecerían las condiciones de biodegradación. En cuanto a la calidad del compost obtenido en los ensayos, los resultados de los análisis físico – químicos y de fitotoxicidad revelan que los niveles de concentración de microorganismo patógenos y de metales pesados superan, en la práctica totalidad de las muestras, los niveles máximos permitidos en la legislación vigente aplicable a productos fertilizantes elaborados con residuos. Mediante el análisis de la composición de los envases ensayados se constata que la causa de esta contaminación reside en la materia orgánica utilizada para compostar en los ensayos, procedente del residuo de origen doméstico de la denominada “fracción resto”. Esta conclusión confirma la necesidad de realizar una recogida selectiva de la fracción orgánica en origen, existiendo estudios que evidencian la mejora de la calidad del residuo recogido en la denominada “fracción orgánica recogida selectivamente” (FORM). Compostable polymers are approximately 30% of bioplastics used for packaging, being this application, at same time, the main destination for the production of such materials exceeded 1.6 million tonnes in 2013. This thesis deals with the biodegradation of household packaging waste compostable in aerobic medium for two format types and materials, rigid container made of PLA (Class I) and two types of bags made of PBAT + PLA (Classes II and III). There are several studies developed about this issue at laboratory scale but for other kinds of packaging and biopolymers and under composting controlled conditions with some specifically plants projection. This thesis goes one step further and researches the real behaviour of compostable plastic packaging in the composting practice in pile and tunnel technologies, both at pilot and industrial scale, within the procedure and environmental conditions of concrete devices. Therefore, with a followed method, basic requirements fulfilment for compostable packaging have been analysed according to UNE-EN 13432 standard. It has been assessed the biodegradability percentage of the packaging studied, based on loss dry weight after the composting process, and the quality of the compost obtained, based on physical-chemical analysis to check no toxicity provided by the studied materials. Regarding biodegradability levels, results allow to conclude that Class I packaging are composted properly in both technologies and do not require high exigent process conditions for achieving 100% biodegradability levels. Related to Class II packaging, it can be assumed that it is a material that composts properly in pile and tunnel at industrial scale but requires exigent conditions for achieving 100% biodegradability levels for being clearly affected by sample location in the composting mass, especially in tunnel technology case. While 90% of the samples reach 100% of biodegradation in pile at industrial scale, only 50% achieve it in tunnel technology at the same scale. Regarding Class III packaging, it can be said that it is a material properly composted in tunnel at industrial scale but requires certain exigent conditions for reaching 100% biodegradation levels for being possibly affected by sample location in the composting mass. The 75% of the samples tested in tunnel at industrial scale reaches 100% biodegradation. Although this kind of packaging has not been tested on pile technology due to unavailability of samples, it is judged that biodegradability results that could be reached would have been, at least, the same obtained for Class II packaging, as they are very similar materials in composition. Finally, it is concluded that pile technology is more suitable for achieving highest biodegradation levels in bag packaging type of PBAT+PLA. Additionally, the obtained results conclude that, in the designing of composting devices for treatment of organic fraction selectively collected, it would be recommended a recirculation of the refining refuse of composted material in order to increase the probability of such materials to expose to proper environmental conditions. If the waste is grinded before entering the process, the specific surface in contact with organic material would also be increased and therefore biodegradation conditions would be more favourable. Regarding quality of the compost obtained in the tests, physical-chemical and phytotoxicity analysis results reveal that pathogen microorganism and heavy metals concentrations exceed, in most of the samples, the maximum allowed levels by current legislation for fertilizers obtained from wastes. Composition analysis of tested packaging verifies that the reason for this contamination is the organic material used for composting tests, comes from the household waste called “rest fraction”. This conclusion confirms the need of a selective collection of organic fraction in the origin, as existing studies show the quality improvement of the waste collected in the so-called “organic fraction selectively collected” (FORM).

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-V-compounds drives the research for their heteroepitaxial integration on more abundant and cheaper standard substrates such as Si(100) or Ge(100). In these cases, a general task must be accomplished successfully, i.e. the growth of polar materials on non-polar substrates and, beyond that, very specific variations such as the individual interface formation and the atomic step structure, have to be controlled. Above all, the method of choice to grow industrial relevant high-performance device structures is MOVPE, not normally compatible with surface and interface sensitive characterization tools, which are commonly based on ultrahigh vacuum (UHV) ambients. A dedicated sample transfer system from MOVPE environment to UHV enabled us to benchmark the optical in-situ spectra with results from various surfaces science instruments without considering disruptive contaminants. X-ray photoelectron spectroscopy (XPS) provided direct observation of different terminations such as arsenic and phosphorous and verified oxide removal under various specific process parameters. Absorption lines in Fourier-transform infrared (FTIR) spectra were used to identify specific stretch modes of coupled hydrides and the polarization dependence of the anti-symmetric stretch modes distinguished different dimer orientations. Scanning tunnelling microscopy (STM) studied the atomic arrangement of dimers and steps and tip-induced H-desorption proved the saturation of dangling bonds after preparati- n. In-situ RAS was employed to display details transiently such as the presence of H on the surface at lower temperatures (T <; 800°C) and the absence of Si-H bonds at elevated annealing temperature and also surface terminations. Ge buffer growth by the use of GeH4 enables the preparation of smooth surfaces and leads to a more pronounced amplitude of the features in the spectra which indicates improvements of the surface quality.

Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter.

XPS as Characterization Tool for PV: From the Substrate to Complete III-V Multijunction Solar Cells

This contribution aims to illustrate the potential of the X-ray photoelectron spectroscopy (XPS) technique as a tool to analyze different parts of a solar cell (surface state, heterointerfaces, profile composition of ohmic contacts, etc). Here, the analysis is specifically applied to III-V multijunction solar cells used in concentrator systems. The information provided from such XPS analysis has helped to understand the physico-chemical nature of these surfaces and interfaces, and thus has guided the technological process in order to improve the solar cell performance.

Statistical Calculation of the Main Reliability Functions of GaAs Concentrator III-V Solar Cells

This paper presents some of the results of a method to determine the main reliability functions of concentrator solar cells. High concentrator GaAs single junction solar cells have been tested in an Accelerated Life Test. The method can be directly applied to multi-junction solar cells. The main conclusions of this test carried out show that these solar cells are robust devices with a very low probability of failure caused by degradation during their operation life (more than 30 years). The evaluation of the probability operation function (i.e. the reliability function R(t)) is obtained for two nominal operation conditions of these cells, namely simulated concentration ratios of 700 and 1050 suns. Preliminary determination of the Mean Time to Failure indicates a value much higher than the intended operation life time of the concentrator cells.

Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-nitride nanodetectors, white light emitters, and solar cells

III-nitride nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitride nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow with high order on pre-defined sites on a pre-patterned substrate

Impact of MOVPE Environment on Silicon Substrates for III-V-on-Si Multijunction Solar Cells

With the final goal of integrating III-V materials to silicon for tandem solar cells, the influence of the metal-organic vapor phase epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell device. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. The effect of the formation of the emitter by phosphorus diffusion has also been evaluated.

Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III?V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.

ARXPS analysis of a GaAs/GaInP heterointerface with application in III-V multijunction solar cells

In this contribution, angle-resolved X-ray photoelectron spectroscopy is used to explore the extension and nature of a GaAs/GaInP heterointerface. This bilayer structure constitutes a very common interface in a multilayered III-V solar cell. Our results show a wide indium penetration into the GaAs layer, while phosphorous diffusion is much less important. The physico-chemical nature of such interface and its depth could deleteriously impact the solar cell performance. Our results probe the formation of spurious phases which may profoundly affect the interface behavior.

Optimization of the silicon subcell for III-V on silicon multijunction solar cells: key differences with conventional silicon technology

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

Preliminary temperature Accelerated Life Test (ALT) on III-V commercial concentrator triple-junction solar cells

A quantitative temperature accelerated life test on sixty GaInP/GaInAs/Ge triple-junction commercial concentrator solar cells is being carried out. The final objective of this experiment is to evaluate the reliability, warranty period, and failure mechanism of high concentration solar cells in a moderate period of time. The acceleration of the degradation is realized by subjecting the solar cells at temperatures markedly higher than the nominal working temperature under a concentrator Three experiments at three different temperatures are necessary in order to obtain the acceleration factor which relates the time at the stress level with the time at nominal working conditions. . However, up to now only the test at the highest temperature has finished. Therefore, we can not provide complete reliability information but we have analyzed the life data and the failure mode of the solar cells inside the climatic chamber at the highest temperature. The failures have been all of them catastrophic. In fact, the solar cells have turned into short circuits. We have fitted the failure distribution to a two parameters Weibull function. The failures are wear-out type. We have observed that the busbar and the surrounding fingers are completely deteriorate

Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. One of the first issues to be considered in the development of this structure will be the strategy to create the silicon emitter of the bottom subcell. In this study, we explore the possibility of forming the silicon emitter by phosphorus diffusion (i.e. exposing the wafer to PH3 in a MOVPE reactor) and still obtain good surface morphologies to achieve a successful III-V heteroepitaxy as occurs in conventional III-V on germanium solar cell technology. Consequently, we explore the parameter space (PH3 partial pressure, time and temperature) that is needed to create optimized emitter designs and assess the impact of such treatments on surface morphology using atomic force microscopy. Although a strong degradation of surface morphology caused by prolonged exposure of silicon to PH3 is corroborated, it is also shown that subsequent anneals under H-2 can recover silicon surface morphology and minimize its RMS roughness and the presence of pits and spikes.

Effects of internal luminescence and internal optics on V-oc and J(sc) of III-V solar cells

For solar cells dominated by radiative recombination, the performance can be significantly enhanced by improving the internal optics. Internally radiated photons can be directly emitted from the cell, but if confined by good internal reflectors at the front and back of the cell they can also be re-absorbed with a significant probability. This so-called photon recycling leads to an increase in the equilibrium minority carrier concentration and therefore the open-circuit voltage, Voc. In multijunction cells, the internal luminescence from a particular junction can also be coupled into a lower bandgap junction where it generates photocurrent in addition to the externally generated photocurrent, and affects the overall performance of the tandem. We demonstrate and discuss the implications of a detailed model that we have developed for real, non-idealized solar cells that calculates the external luminescent efficiency, accounting for wavelength-dependent optical properties in each layer, parasitic optical and electrical losses, multiple reflections within the cell and isotropic internal emission. The calculation leads to Voc, and we show data on high quality GaAs cells that agree with the trends in the model as the optics are systematically varied. For multijunction cells the calculation also leads to the luminescent coupling efficiency, and we show data on GaInP/GaAs tandems where the trends also agree as the coupling is systematically varied. In both cases, the effects of the optics are most prominent in cells with good material quality. The model is applicable to any solar cell for which the optical properties of each layer are well-characterized, and can be used to explore a wide phase space of design for single junction and multijunction solar cells.