Monitoring Activities from Multiple Video Streams: Establishing a Common Coordinate Frame

Passive monitoring of large sites typically requires coordination between multiple cameras, which in turn requires methods for automatically relating events between distributed cameras. This paper tackles the problem of self-calibration of multiple cameras which are very far apart, using feature correspondences to determine the camera geometry. The key problem is finding such correspondences. Since the camera geometry and photometric characteristics vary considerably between images, one cannot use brightness and/or proximity constraints. Instead we apply planar geometric constraints to moving objects in the scene in order to align the scene"s ground plane across multiple views. We do not assume synchronized cameras, and we show that enforcing geometric constraints enables us to align the tracking data in time. Once we have recovered the homography which aligns the planar structure in the scene, we can compute from the homography matrix the 3D position of the plane and the relative camera positions. This in turn enables us to recover a homography matrix which maps the images to an overhead view. We demonstrate this technique in two settings: a controlled lab setting where we test the effects of errors in internal camera calibration, and an uncontrolled, outdoor setting in which the full procedure is applied to external camera calibration and ground plane recovery. In spite of noise in the internal camera parameters and image data, the system successfully recovers both planar structure and relative camera positions in both settings.

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InGaN layers will result in a significant degradation of the crystalline quality of the epitaxial layers. In addition, unlike other III-V compound semiconductors, the ratio of gallium to indium incorporated in InGaN is in general not a simple function of the metal atomic flux ratio, f[subscript Ga]/f[subscript In]. Instead, In incorporation is complicated by the tendency of gallium to incorporate preferentially and excess In to form metallic droplets on the growth surface. This phenomenon can definitely affect the In distribution in the InGaN system. Scanning electron microscopy, room temperature photoluminescence, and X-ray diffraction techniques have been used to characterize InGaN layer grown on InN and InGaN buffers. The growth was done on c-plane sapphire by MOCVD. Results showed that green emission was obtained which indicates a relatively high In incorporation.