Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.

Memory Hierarchy Hardware-Software Co-design in Embedded Systems

The memory hierarchy is the main bottleneck in modern computer systems as the gap between the speed of the processor and the memory continues to grow larger. The situation in embedded systems is even worse. The memory hierarchy consumes a large amount of chip area and energy, which are precious resources in embedded systems. Moreover, embedded systems have multiple design objectives such as performance, energy consumption, and area, etc. Customizing the memory hierarchy for specific applications is a very important way to take full advantage of limited resources to maximize the performance. However, the traditional custom memory hierarchy design methodologies are phase-ordered. They separate the application optimization from the memory hierarchy architecture design, which tend to result in local-optimal solutions. In traditional Hardware-Software co-design methodologies, much of the work has focused on utilizing reconfigurable logic to partition the computation. However, utilizing reconfigurable logic to perform the memory hierarchy design is seldom addressed. In this paper, we propose a new framework for designing memory hierarchy for embedded systems. The framework will take advantage of the flexible reconfigurable logic to customize the memory hierarchy for specific applications. It combines the application optimization and memory hierarchy design together to obtain a global-optimal solution. Using the framework, we performed a case study to design a new software-controlled instruction memory that showed promising potential.