Priors Stabilizers and Basis Functions: From Regularization to Radial, Tensor and Additive Splines

We had previously shown that regularization principles lead to approximation schemes, as Radial Basis Functions, which are equivalent to networks with one layer of hidden units, called Regularization Networks. In this paper we show that regularization networks encompass a much broader range of approximation schemes, including many of the popular general additive models, Breiman's hinge functions and some forms of Projection Pursuit Regression. In the probabilistic interpretation of regularization, the different classes of basis functions correspond to different classes of prior probabilities on the approximating function spaces, and therefore to different types of smoothness assumptions. In the final part of the paper, we also show a relation between activation functions of the Gaussian and sigmoidal type.

Statistical Models for Co-occurrence Data

Modeling and predicting co-occurrences of events is a fundamental problem of unsupervised learning. In this contribution we develop a statistical framework for analyzing co-occurrence data in a general setting where elementary observations are joint occurrences of pairs of abstract objects from two finite sets. The main challenge for statistical models in this context is to overcome the inherent data sparseness and to estimate the probabilities for pairs which were rarely observed or even unobserved in a given sample set. Moreover, it is often of considerable interest to extract grouping structure or to find a hierarchical data organization. A novel family of mixture models is proposed which explain the observed data by a finite number of shared aspects or clusters. This provides a common framework for statistical inference and structure discovery and also includes several recently proposed models as special cases. Adopting the maximum likelihood principle, EM algorithms are derived to fit the model parameters. We develop improved versions of EM which largely avoid overfitting problems and overcome the inherent locality of EM--based optimization. Among the broad variety of possible applications, e.g., in information retrieval, natural language processing, data mining, and computer vision, we have chosen document retrieval, the statistical analysis of noun/adjective co-occurrence and the unsupervised segmentation of textured images to test and evaluate the proposed algorithms.

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.