4 resultados para Crystalline solids

em Massachusetts Institute of Technology


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An investigation is made into the problem of constructing a model of the appearance to an optical input device of scenes consisting of plane-faced geometric solids. The goal is to study algorithms which find the real straight edges in the scenes, taking into account smooth variations in intensity over faces of the solids, blurring of edges and noise. A general mathematical analysis is made of optimal methods for identifying the edge lines in figures, given a raster of intensities covering the entire field of view. There is given in addition a suboptimal statistical decision procedure, based on the model, for the identification of a line within a narrow band on the field of view given an array of intensities from within the band. A computer program has been written and extensively tested which implements this procedure and extracts lines from real scenes. Other programs were written which judge the completeness of extracted sets of lines, and propose and test for additional lines which had escaped initial detection. The performance of these programs is discussed in relation to the theory derived from the model, and with regard to their use of global information in detecting and proposing lines.

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Colloidal self assembly is an efficient method for making 3-D ordered nanostructures suitable for materials such as photonic crystals and macroscopic solids for catalysis and sensor applications. Colloidal crystals grown by convective methods exhibit defects on two different scales. Macro defects such as cracks and void bands originate from the dynamics of meniscus motion during colloidal crystal growth while micro defects like vacancies, dislocation and stacking faults are indigenous to the colloidal crystalline structure. This paper analyses the crystallography and energetics of the microscopic defects from the point of view of classical thermodynamics and discusses the strategy for the control of the macroscopic defects through optimization of the liquid-vapor interface.

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High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.

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This paper reports the surface morphologies and ablation of crystalline silicon wafers irradiated by infra-red 775 nm Ti:sapphire femtosecond laser. The effects of energy fluences (below and above single-pulse modification) with different number of pulses were studied. New morphological features such as pits, cracks formation, Laser-Induced Periodic Surface Structures (LIPSS) and ablation were observed. The investigation indicated that there are two distinct mechanisms under femtosecond laser irradiation: low fluence regime with different morphological features and high fluence regime with high material removal and without complex morphological features.