Femtosecond laser processing of crystalline silicon
| Data(s) |
14/12/2004
14/12/2004
01/01/2005
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|---|---|
| Resumo |
This paper reports the surface morphologies and ablation of crystalline silicon wafers irradiated by infra-red 775 nm Ti:sapphire femtosecond laser. The effects of energy fluences (below and above single-pulse modification) with different number of pulses were studied. New morphological features such as pits, cracks formation, Laser-Induced Periodic Surface Structures (LIPSS) and ablation were observed. The investigation indicated that there are two distinct mechanisms under femtosecond laser irradiation: low fluence regime with different morphological features and high fluence regime with high material removal and without complex morphological features. Singapore-MIT Alliance (SMA) |
| Formato |
967927 bytes application/pdf |
| Identificador | |
| Idioma(s) |
en |
| Relação |
Innovation in Manufacturing Systems and Technology (IMST); |
| Palavras-Chave | #crystalline silicon #femtosecond laser #morphology #ablation #incubation effect |
| Tipo |
Article |
