The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates

The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN layers led to growth of GaN films with decreased tensile stresses and decreased threading dislocation densities, as well as films with improved quality as indicated by x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. The possible mechanism of the reduction of tensile stress and the dislocation density is discussed in the paper.

High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN.

Process Variability in Micro-Embossing

A promising technique for the large-scale manufacture of micro-fluidic devices and photonic devices is hot embossing of polymers such as PMMA. Micro-embossing is a deformation process where the workpiece material is heated to permit easier material flow and then forced over a planar patterned tool. While there has been considerable, attention paid to process feasibility very little effort has been put into production issues such as process capability and eventual process control. In this paper, we present initial studies aimed at identifying the origins and magnitude of variability for embossing features at the micron scale in PMMA. Test parts with features ranging from 3.5- 630 µm wide and 0.9 µm deep were formed. Measurements at this scale proved very difficult, and only atomic force microscopy was able to provide resolution sufficient to identify process variations. It was found that standard deviations of widths at the 3-4 µm scale were on the order of 0.5 µm leading to a coefficient of variation as high as 13%. Clearly, the transition from test to manufacturing for this process will require understanding the causes of this variation and devising control methods to minimize its magnitude over all types of parts.