A Network Charge-Orineted MOS Transistor Model

The MOS transistor physical model as described in [3] is presented here as a network model. The goal is to obtain an accurate model, suitable for simulation, free from certain problems reported in the literature [13], and conceptually as simple as possible. To achieve this goal the original model had to be extended and modified. The paper presents the derivation of the network model from physical equations, including the corrections which are required for simulation and which compensate for simplifications introduced in the original physical model. Our intrinsic MOS model consists of three nonlinear voltage-controlled capacitors and a dependent current source. The charges of the capacitors and the current of the current source are functions of the voltages $V_{gs}$, $V_{bs}$, and $V_{ds}$. The complete model consists of the intrinsic model plus the parasitics. The apparent simplicity of the model is a result of hiding information in the characteristics of the nonlinear components. The resulted network model has been checked by simulation and analysis. It is shown that the network model is suitable for simulation: It is defined for any value of the voltages; the functions involved are continuous and satisfy Lipschitz conditions with no jumps at region boundaries; Derivatives have been computed symbolically and are available for use by the Newton-Raphson method. The model"s functions can be measured from the terminals. It is also shown that small channel effects can be included in the model. Higher frequency effects can be modeled by using a network consisting of several sections of the basic lumped model. Future plans include a detailed comparison of the network model with models such as SPICE level 3 and a comparison of the multi- section higher frequency model with experiments.

Cell-line Engineering of Chinese Hamster Ovary Cells for Low-temperature Culture

Developments in mammalian cell culture and recombinant technology has allowed for the production of recombinant proteins for use as human therapeutics. Mammalian cell culture is typically operated at the physiological temperature of 37°. However, recent research has shown that the use of low-temperature conditions (30-33°) as a platform for cell-culture results in changes in cell characteristics, such as increased specific productivity and extended periods of cell viability, that can potentially improve the production of recombinant proteins. Furthermore, many recent reports have focused on investigating low-temperature mammalian cell culture of Chinese hamster ovary (CHO) cells, one of the principal cell-lines used in industrial production of recombinant proteins. Exposure to low ambient temperatures exerts an external stress on all living cells, and elicits a cellular response. This cold-stress response has been observed in bacteria, plants and mammals, and is regulated at the gene level. The exact genes and molecular mechanisms involved in the cold-stress response in prokaryotes and plants have been well studied. There are also various reports that detail the modification of cold-stress genes to improve the characteristics of bacteria or plant cells at low temperatures. However, there is very limited information on mammalian cold-stress genes or the related pathways governing the mammalian cold-stress response. This project seeks to investigate and characterise cold-stress genes that are differentially expressed during low-temperature culture of CHO cells, and to relate them to the various changes in cell characteristics observed in low-temperature culture of CHO cells. The gene information can then be used to modify CHO cell-lines for improved performance in the production of recombinant proteins.