I. Fundamental limitations in microelectronics. II. Power Schottky diode design and comparison with the junction diode. III. Permittivity of strontium titanate

Part I

The physical phenomena which will ultimately limit the packing density of planar bipolar and MOS integrated circuits are examined. The maximum packing density is obtained by minimizing the supply voltage and the size of the devices. The minimum size of a bipolar transistor is determined by junction breakdown, punch-through and doping fluctuations. The minimum size of a MOS transistor is determined by gate oxide breakdown and drain-source punch-through. The packing density of fully active bipolar or static non-complementary MOS circuits becomes limited by power dissipation. The packing density of circuits which are not fully active such as read-only memories, becomes limited by the area occupied by the devices, and the frequency is limited by the circuit time constants and by metal migration. The packing density of fully active dynamic or complementary MOS circuits is limited by the area occupied by the devices, and the frequency is limited by power dissipation and metal migration. It is concluded that read-only memories will reach approximately the same performance and packing density with MOS and bipolar technologies, while fully active circuits will reach the highest levels of integration with dynamic MOS or complementary MOS technologies.

Part II

Because the Schottky diode is a one-carrier device, it has both advantages and disadvantages with respect to the junction diode which is a two-carrier device. The advantage is that there are practically no excess minority carriers which must be swept out before the diode blocks current in the reverse direction, i.e. a much faster recovery time. The disadvantage of the Schottky diode is that for a high voltage device it is not possible to use conductivity modulation as in the p i n diode; since charge carriers are of one sign, no charge cancellation can occur and current becomes space charge limited. The Schottky diode design is developed in Section 2 and the characteristics of an optimally designed silicon Schottky diode are summarized in Fig. 9. Design criteria and quantitative comparison of junction and Schottky diodes is given in Table 1 and Fig. 10. Although somewhat approximate, the treatment allows a systematic quantitative comparison of the devices for any given application.

Part III

We interpret measurements of permittivity of perovskite strontium titanate as a function of orientation, temperature, electric field and frequency performed by Dr. Richard Neville. The free energy of the crystal is calculated as a function of polarization. The Curie-Weiss law and the LST relation are verified. A generalized LST relation is used to calculate the permittivity of strontium titanate from zero to optic frequencies. Two active optic modes are important. The lower frequency mode is attributed mainly to motion of the strontium ions with respect to the rest of the lattice, while the higher frequency active mode is attributed to motion of the titanium ions with respect to the oxygen lattice. An anomalous resonance which multi-domain strontium titanate crystals exhibit below 65°K is described and a plausible mechanism which explains the phenomenon is presented.

A self-regulating valve for single-phase liquid cooling of microelectronics

This paper reports on the design, optimization and testing of a self-regulating valve for single-phase liquid cooling of microelectronics. Its purpose is to maintain the integrated circuit (IC) at constant temperature and to reduce power consumption by diminishing flow generated by the pump as a function of the cooling requirements. It uses a thermopneumatic actuation principle that combines the advantages of zero power consumption and small size in combination with a high flow rate and low manufacturing costs. The valve actuation is provided by the thermal expansion of a liquid (actuation fluid) which, at the same time, actuates the valve and provides feed-back sensing. A maximum flow rate of 38 kg h-1 passes through the valve for a heat load up to 500 W. The valve is able to reduce the pumping power by up to 60% and it has the capability to maintain the IC at a more uniform temperature. © 2011 IOP Publishing Ltd.

The status, limits and countermeasures in the development of the silicon microelectronics industry

In this paper.. the status and limits in the development of the silicon microelectronics industry are presented briefly. The key countermeasures given are use of the new structure materials and the new device structures.

Artificial neural networks expecting more advanced microelectronics technology

　

Variable frequency microwave curing of polymer materials in microelectronics packaging applications

The use of variable frequency microwave technology in curing of polymer materials used in microelectronics applications is discussed. A revolutionary open-ended microwave curing system is outlined and assessed using experimental and numerical approaches. Experimental and numerical results are presented, demonstrating the feasibility of the system

Multi-physics modelling for microelectronics and microsystems - current capabilities and future challenges

At present the vast majority of Computer-Aided- Engineering (CAE) analysis calculations for microelectronic and microsystems technologies are undertaken using software tools that focus on single aspects of the physics taking place. For example, the design engineer may use one code to predict the airflow and thermal behavior of an electronic package, then another code to predict the stress in solder joints, and then yet another code to predict electromagnetic radiation throughout the system. The reason for this focus of mesh-based codes on separate parts of the governing physics is essentially due to the numerical technologies used to solve the partial differential equations, combined with the subsequent heritage structure in the software codes. Using different software tools, that each requires model build and meshing, leads to a large investment in time, and hence cost, to undertake each of the simulations. During the last ten years there has been significant developments in the modelling community around multi- physics analysis. These developments are being followed by many of the code vendors who are now providing multi-physics capabilities in their software tools. This paper illustrates current capabilities of multi-physics technology and highlights some of the future challenges

Optimization of an open-ended microwave oven for microelectronics packaging

A physically open, but electrically shielded, microwave open oven can be produced by virtue of the evanescent fields in a waveguide below cutoff. The below cutoff heating chamber is fed by a transverse magnetic resonance established in a dielectric-filled section of the waveguide exploiting continuity of normal electric flux. In order to optimize the fields and the performance of the oven, a thin layer of a dielectric material with higher permittivity is inserted at the interface. Analysis and synthesis of an optimized open oven predicts field enhancement in the heating chamber up to 9.4 dB. Results from experimental testing on two fabricated prototypes are in agreement with the simulated predictions, and demonstrate an up to tenfold improvement in the heating performance. The open-ended oven allows for simultaneous precision alignment, testing, and efficient curing of microelectronic devices, significantly increasing productivity gains.

Polymer cure modeling for microelectronics applications

A review of polymer cure models used in microelectronics packaging applications reveals no clear consensus of the chemical rate constants for the cure reactions, or even of an effective model. The problem lies in the contrast between the actual cure process, which involves a sequence of distinct chemical reactions, and the models, which typically assume only one, (or two with some restrictions on the independence of their characteristic constants.) The standard techniques to determine the model parameters are based on differential scanning calorimetry (DSC), which cannot distinguish between the reactions, and hence yields results useful only under the same conditions, which completely misses the point of modeling. The obvious solution is for manufacturers to provide the modeling parameters, but failing that, an alternative experimental technique is required to determine individual reaction parameters, e.g. Fourier transform infra-red spectroscopy (FTIR).

A critical analysis of polymer cure modeling for microelectronics applications

A review of polymer cure models used in microelectronics packaging applications reveals no clear consensus of the chemical rate constants for the cure reactions, or even of an effective model. The problem lies in the contrast between the actual cure process, which involves a sequence of distinct chemical reactions, and the models, which typically assume only one, (or two with some restrictions on the independence of their characteristic constants.) The standard techniques to determine the model parameters are based on differential scanning calorimetry (DSC), which cannot distinguish between the reactions, and hence yields results useful only under the same conditions, which completely misses the point of modeling. The obvious solution is for manufacturers to provide the modeling parameters, but failing that, an alternative experimental technique is required to determine individual reaction parameters, e.g. Fourier transform infra-red spectroscopy (FTIR).

Microwave curing of thermosetting polymer materials in microelectronics applications

Thermosetting polymer materials are widely utilised in modern microelectronics packaging technology. These materials are used for a number of functions, such as for device bonding, for structural support applications and for physical protection of semiconductor dies. Typically, convection heating systems are used to raise the temperature of the materials to expedite the polymerisation process. The convection cure process has a number of drawbacks including process durations generally in excess of 1 hour and the requirement to heat the entire printed circuit board assembly, inducing thermomechanical stresses which effect device reliability. Microwave energy is able to raise the temperature of materials in a rapid, controlled manner. As the microwave energy penetrates into the polymer materials, the heating can be considered volumetric – i.e. the rate of heating is approximately constant throughout the material. This enables a maximal heating rate far greater than is available with convection oven systems which only raise the surface temperature of the polymer material and rely on thermal conductivity to transfer heat energy into the bulk. The high heating rate, combined with the ability to vary the operating power of the microwave system, enables the extremely rapid cure processes. Microwave curing of a commercially available encapsulation material has been studied experimentally and through use of numerical modelling techniques. The material assessed is Henkel EO-1080, a single component thermosetting epoxy. The producer has suggested three typical convection oven cure options for EO1080: 20 min at 150C or 90 min at 140C or 120 min at 110C. Rapid curing of materials of this type using advanced microwave systems, such as the FAMOBS system [1], is of great interest to microelectronics system manufacturers as it has the potential to reduce manufacturing costs, increase device reliability and enables new device designs. Experimental analysis has demonstrated that, in a realistic chip-on-board encapsulation scenario, the polymer material can be fully cured in approximately one minute. This corresponds to a reduction in cure time of approximately 95 percent relative to the convection oven process. Numerical assessment of the process [2] also suggests that cure times of approximately 70 seconds are feasible whilst indicating that the decrease in process duration comes at the expense of variation in degree of cure within the polymer.

Optimization of an open-ended microwave oven for microelectronics packaging

A physically open, but electrically shielded, microwave open oven can be produced by virtue of the evanescent fields in a waveguide below cutoff. The below cutoff heating chamber is fed by a transverse magnetic resonance established in a dielectric-filled section of the waveguide exploiting continuity of normal electric flux. In order to optimize the fields and the performance of the oven, a thin layer of a dielectric material with higher permittivity is inserted at the interface. Analysis and synthesis of an optimized open oven predicts field enhancement in the heating chamber up to 9.4 dB. Results from experimental testing on two fabricated prototypes are in agreement with the simulated predictions, and demonstrate an up to tenfold improvement in the heating performance. The open-ended oven allows for simultaneous precision alignment, testing, and efficient curing of microelectronic devices, significantly increasing productivity gains.