Electric-field control of exchange bias in multiferroic epitaxial heterostructures


Autoria(s): Laukhin, Vladimir; Skumryev, Vassil Hristov; Martí, X.; Hrabovsky, D.; Sánchez Barrera, Florencio; García-Cuenca Varona, María Victoria; Ferrater Martorell, Cèsar; Varela Fernández, Manuel, 1956-; Lüders, R.; Bobo, J. F.; Fontcuberta i Griñó, Josep
Contribuinte(s)

Universitat de Barcelona

Data(s)

25/06/2010

Resumo

The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices.

Identificador

http://hdl.handle.net/2445/13171

Idioma(s)

eng

Publicador

American Physical Society

Direitos

(c) American Physical Society, 2006

info:eu-repo/semantics/openAccess

Palavras-Chave #Electrònica quàntica #Semiconductors #Microelectrònica #Qunatum electronics #Semiconductors #Microelectronics
Tipo

info:eu-repo/semantics/article