SiGe/Si quantum well resonant-cavity-enhanced photodetector

Resonant-cavity-enhanced photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report a novel SiGe/Si multiple quantum-well resonant-cavity-enhanced photodetector fabricated on a separation-by-implanted-oxygen wafer operating near 1300nm. The buried oxide layer in SIMOX is used as a bottom mirror to form a vertical cavity with silicon dioxide/silicon Bragg reflector deposited on the top surface. The quantum efficiency at the wavelength of 1300nm is measured with 3.5% at a reverse bias of 15V, which is enhanced by 10 folds compared with a conventional photodetector with the same absorption structures.

Resonant-cavity-enhanced photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report a novel SiGe/Si multiple quantum-well resonant-cavity-enhanced photodetector fabricated on a separation-by-implanted-oxygen wafer operating near 1300nm. The buried oxide layer in SIMOX is used as a bottom mirror to form a vertical cavity with silicon dioxide/silicon Bragg reflector deposited on the top surface. The quantum efficiency at the wavelength of 1300nm is measured with 3.5% at a reverse bias of 15V, which is enhanced by 10 folds compared with a conventional photodetector with the same absorption structures.

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SPIE.

Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

SPIE.