ф2”和 ф3”非掺Si-GaAs单晶(片)研究


Autoria(s): 林兰英; 曹福; 白玉珂; 惠峰; 卜俊鹏
Data(s)

1996

Resumo

于G批量导入至Hzhangdi

Made available in DSpace on 2010-04-13T00:43:40Z (GMT). No. of bitstreams: 0 Previous issue date: 1996

Identificador

http://ir.semi.ac.cn/handle/172111/11086

http://www.irgrid.ac.cn/handle/1471x/65804

Idioma(s)

中文

Fonte

林兰英;曹福;白玉珂;惠峰;卜俊鹏.ф2”和 ф3”非掺Si-GaAs单晶(片)研究.1996

Palavras-Chave #半导体材料 #Si-GaAs
Tipo

成果