Dielectric response and its light-induced change in undoped alpha-Si : H films below 13 MHz

The low frequency (<13 MHz) dielectric response and its light-induced change in undoped a-Si:H were investigated in detail. The dielectric constant epsilon (the real part) in this range decreases with illumination time: following a stretched exponential law similar to that found for other light-induced changes. The saturation relative change was about 0.1-0.2 % for the measured samples. The change is fading away either after repeated illumination-annealing training or by aging at room temperature. The present results indicate some rearrangement of the whole Si network caused by light soaking.