Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots
Data(s) |
2000
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Resumo |
We report on the photoluminescence in directly Si- and Be-doped self-organized InAs/GaAs quantum dots (QDs). When the doping level is low, a decrease in linewidth is observed. However, it will decrease the uniformity and photoluminescence peak intensity of QDs when the doping level is high. We relate this phenomenon to a model that takes the Si or Be atoms as the nucleation centers for the formation of QDs. (C) 2000 Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang HL; Yang FH; Feng SL .Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots ,JOURNAL OF CRYSTAL GROWTH,2000,212(1-2):35-38 |
Palavras-Chave | #半导体材料 #dopant #InAs/GaAs #self-organized quantum dots #MBE #PL #INFRARED-ABSORPTION #INAS ISLANDS #GROWTH #GAAS |
Tipo |
期刊论文 |