Comparison of the gate drive parameter space for driving power MOSFETs using conventional and cascode configurations
| Data(s) |
2014
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|---|---|
| Resumo |
Conventional voltage driven gate drive circuits utilise a resistor to control the switching speed of power MOS-FETs. The gate resistance is adjusted to provide controlled rate of change of load current and voltage. The cascode gate drive configuration has been proposed as an alternative to the conventional resistor-fed gate drive circuit. While cascode drive is broadly understood in the literature the switching characteristics of this topology are not well documented. This paper explores, through both simulation and experimentation, the gate drive parameter space of the cascode gate drive configuration and provides a comparison to the switching characteristics of conventional gate drive. |
| Formato |
application/pdf |
| Identificador | |
| Publicador |
IEEE |
| Relação |
http://eprints.qut.edu.au/78798/3/78798a.pdf DOI:10.1109/ECCE.2014.6953808 Broadmeadow, Mark A.H., Walker, Geoffrey R., & Ledwich, Gerard F. (2014) Comparison of the gate drive parameter space for driving power MOSFETs using conventional and cascode configurations. In Proceedings of the 2014 IEEE Energy Conversion Congress and Exposition, IEEE, Pittsburgh, PA, pp. 3002-3009. |
| Direitos |
Copyright 2014 IEEE Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Fonte |
School of Electrical Engineering & Computer Science; Science & Engineering Faculty |
| Palavras-Chave | #Capacitance #Logic gates #MOSFET #Resistance #Switches #Switching loss #Trajectory |
| Tipo |
Conference Paper |
