Chemometric optimization of solid-liquid extraction with low-temperature partition (SLE-LTP) for determination of persistent organic pollutants in Caiman yacare eggs

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Low-temperature deformation behaviour of polycrystalline copper

Low-temperature plastic flow in copper was investigated by studying its tensile and creep deformation characteristics. The dependence of the flow stress on temperature and strain rate was used to evaluate the thermal activation energy while the activation area was derived from the change-in-stress creep experiments. A value of 0.6 eV was obtained for the total obstacle energy both in electrolytic and commerical copper. The activation areas in copper of three selected purities fell in the range 1200 to 100 b2. A forest intersection mechanism seems to control the temperature dependent part of the flow stress. The increase in the athermal component of the flow stress with impurity content in copper is attributed to a change in the dislocation density. The investigation also revealed that thermal activation of some attractive junctions also takes place during low-temperature creep. The model of attractive junction formation on a stress decrement during creep, yields a value of 45±10 ergs cm-2 for the stacking fault energy in copper.

Tunnel transport in polypyrrole at low temperature

The anomalous behaviour of conductivity below 4 K in polypyrrole can be attributed to the possibility of tunnel transport in disordered polaronic systems. The deviation from T-1/3 and T-1/4, depending on disorder, can be due to the onset of tunnel transport between localised states, apart from the hopping contribution to the conductivity. In intermediately and lightly doped polypyrrole films, the tunnel contribution to conductivity increases with decreasing temperature in a narrow temperature range, which is a feature of the presence of polarons taking part in the conduction mechanisms of disordered systems with strong electron-phonon coupling. The transition from hopping to tunneling dominated process can be observed either by the increase in conductivity in some cases or by the saturation of conductivity, depending crucially on the extent of disorder in the sample. In both cases the transition temperature is seen to increase with the reduction in the number of localised states.

Low-temperature structure of two copper-based precursors for MOCVD: Aquabis(tert-butyl acetoacetato)copper(II) and Bis(dipivaloylmethanido)copper(II)

The Cu atoms in aquabis(tert-butyl acetoacetato)copper(II),[Cu(C8H13O3)(2)(H2O)], and bis(dipivaloylmethanido)copper(II), [Cu(C11H19O2)(2)], adopt square-pyramidal and planar conformations, respectively, with average Cu--O distances of 1.933 Angstrom in the former (not including the water ligand) and 1.892 Angstrom in the latter. It is interesting to note that the lability of the tert-butyl and methyl groups in both structures, which renders even the location of the terminal C atoms difficult, is reduced at T = 130 K, enabling location of all the protons in the difference Fourier map.

Low-temperature specific heat of antiferromagnetic EuNi5P3 and mixed-valent EuNi2P2 in magnetic fields to 7 T

he specific heats of EUNi(5)P(3), an antiferromagnet, and EuNi2P2, a mixed-valence compound, have been measured between 0.4 and 30 K in magnetic fields of, respectively, 0, 0.5, 1, 1.5, 2.5, 5, and 7 T, and 0 and 7 T. In zero field the specific heat of EuNi5P3 shows a h-like anomaly with a maximum at 8.3 K. With increasing field in the range 0-2.5 T, the maximum shifts to lower temperatures, as expected for an antiferromagnet. In higher fields the antiferromagnetic ordering is destroyed and the magnetic part of the specific heat approaches a Schottky anomaly that is consistent with expectations for the crystal-field/Zeeman levels. In low fields and for temperatures between 1.5 acid 5 K the magnetic contribution to the specific heat is proportional to the temperature, indicating a high density of excited states with an energy dependence that is very unusual for an antiferromagnet. The entropy associated with the magnetic ordering is similar to R In8, confirming that only the Eu2+-with J=7/2, S=7/2, L=0-orders below 30 R. In zero field approximately 20% of the entropy occurs above the Neel temperature, consistent. with the usual amount of short-range order observed in antiferromagnets. The hyperfine magnetic field at the Eu nuclei in EUNi(5)P(3) is 33.3 T, in good agreement with a value calculated from electron-nuclear double resonance measurements. For EuNi2P2 the specific heat is nearly field independent and shows no evidence of magnetic ordering or hyperfine fields. The coefficient of the electron contribution to the specific heat is similar to 100 mJ/mol K-2.

Low temperature synthesis of pure cubic ZrO2 nanopowder: Structural and luminescence studies

Pure cubic zirconia (ZrO2) nanopowder is prepared for the first time by simple low temperature solution combustion method without calcination. The product is characterized by Powder X-ray Diffraction (PXRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Fourier Transform Infra Red spectroscopy (FTIR) and Ultraviolet-Visible spectroscopy (UV-Vis). The PXRD showed the formation of pure stable cubic ZrO2 nanopowders with average crystallite size ranging from 6 to 12 nm. The lattice parameters were calculated from Rietveld refinement method. SEM micrograph shows fluffy, mesoporous, agglomerated particles with large number of voids. TEM micrograph shows honey comb like arrangement of particles with particle size similar to 10 nm. The PL emission spectrum excited at 210 nm and 240 nm consists of intense bands centered at similar to 365 and similar to 390 nm. Both the samples show shoulder peak at 420 nm, along with four weak emission bands at similar to 484, similar to 528, similar to 614 and similar to 726 nm. TL studies were carried out pre-irradiating samples with gamma-rays ranging from 1 to 5 KGy at room temperature. A well resolved glow peak at 377 degrees C is recorded which can be ascribed to deep traps. With increase in gamma radiation there is linear increase in TL intensity which shows the possible use of ZrO2 as dosimetric material. (C) 2013 Elsevier B.V. All rights reserved.

Part I: The abortive infection of bacteriophage øx174 at low temperatures. Part II: The early stages in the process of infection by bacteriophage øx174

Part I

The infection of E. coli by ΦX174 at 15°C is abortive; the cells are killed by the infection but neither mature phage nor SS (single-stranded) DNA are synthesized. Parental RF (replicative form) is formed and subsequently replicated at 15°C. The RF made at 15°C shows normal infectivity and full competence to act as precursor to progeny SS DNA after an increase in temperature to 37°C. The investigations suggest that all of the proteins required for SS DNA synthesis and phage maturation are present in the abortive infection at 15°C.

Three possible causes are suggested for the abortive infection at 15°C: (a) A virus-coded protein whose role is essential to the infection is made at 15°C and assumes its native conformation, but its rate of activity is too low at this temperature to sustain the infection process. (b) Virus maturation may involve the formation of a DNA-protein complex and conformational changes which have an energy threshold infrequently reached at 15°C. (c) A host-coded protein present in uninfected cells, and whose activity is essential to the infection at all temperatures, but not to the host at 15°C, is inactive at 15°C. An hypothesis of this type is offered which proposes that the temperature-limiting factor in SS DNA synthesis in vivo may reflect a temperature-dependent property of the host DNA polymerase.

Part II

Three distinct stages are demonstrated in the process whereby ΦX174 invades its host: (1) Attachment: The phage attach to the cell in a manner that does not irreversibly alter the phage particle and which exhibits "single-hit" kinetics. The total charge on the phage particle is demonstrated to be important in determining the rate at which stable attachment is effected. The proteins specified by ΦX cistrons II, III and VII play roles, which may be indirect, in the attachment reaction. (2) Eclipse: 'The attached phage undergo a conformational change. Some of the altered phage particles spontaneously detach from the cell (in a non-infective form) while the remainder are more tightly bound to the cell. The altered phage particles detached (spontaneously or chemically) from such complexes have at least 40% of their DNA extruded from the phage coat. It is proposed that this particle is, or derives from, a direct intermediate in the penetration of the viral DNA.

The kinetics for the eclipse of attached phage particles are first-order with respect to phage concentration and biphasic; about 85% of the phage eclipse at one rate (k = 0.86 min^-1) and the remainder do so at a distinctly lesser rate (k = 0.21 min^-1).

The eclipse event is very temperature-dependent and has the relatively high Arrhenius activation energy of 36.6 kcal/mole, indicating the cooperative nature of the process. The temperature threshold for eclipse is 17 to 18°C.

At present no specific ΦX cistron is identified as affecting the eclipse process. (3) DNA penetration: A fraction of the attached, eclipsed phage particles corresponding in number to the plaque-forming units complete DNA penetration. The penetrated DNA is found in the cell as RF, and the empty phage protein coat remains firmly attached to the exterior of the cell. This step is inhibited by prior irradiation of the phage with relatively high doses of UV light and is insensitive to the presence of KCN and NaN₃. Temporally excluded superinfecting phages do not achieve DNA penetration.

Both eclipsed phage particles and empty phage protein coats may be dissociated from infected cells; some of their properties are described.

Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

Design of the low-temperature AlN interlayer for GaN grown on Si(111) substrate

We have investigated the effect of the thickness and layer number of the low-temperature A1N interlayer (LT-A1N IL) on the stress relaxation and the crystal quality of GaN epilayers grown on Si (111) substrate by metalorganic chemical vapor deposition. It is found that the stress decreases with the increase of the LT-AIN IL thickness, but the crystal quality of the GaN epilayer goes worse quickly when the LT-AIN IL thickness is larger than 16 nm. This is because the increase of the LT-AIN IL thickness will increase the coalescence thickness of its upper GaN layer, which sensitively affects the crystal quality of the epilayer. Using multiple LT-AIN ILs is an effective method not only to reduce the stress, but also to improve the crystal quality of the GaN epilayer. With the increase of the interlayer number, the probability that dislocations are blocked increases and the probability that dislocations are produced at interfaces decreases. Thus, dislocations in the most upper part of GaN are reduced, resulting in the improvement of the crystal quality. Finally, it is suggested that when the total thickness of the epilayer is fixed, both the thickness and the number of the LT-AIN IL should be carefully designed to reduce the stress and improve the crystal quality of the epilayer simultaneously. (c) 2004 Elsevier B.V.. All rights reserved.

Experimental investigation of intracavity absorber low temperature GaAs in diode-pumped Nd : GdVO4 laser

A passively Q-switched and mode-locked diode-pumped Nd:GdVO4 laser was demonstrated using a low-temperature-grown GaAs wafer (LT-GaAs) as an intracavity saturable absorber. The maximal Q-switched mode-locked average output power was 750 mW with the Q-switched envelop having a repetition rate of 167 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 790 MHz.

Low-temperature relaxation of polymers around doped dyes studied by persistent spectral hole burning

Persistent spectral hole burning spectroscopy is applied to evaluate the low-temperature relaxation around the dye molecules doped in several types of polymers. The doped dye is tetraphenylporphine, and the measured polymers are vinyl polymers and main chain aromatic polymers. The changes of microscopic environments around the dye are evaluated from the changes in the hole profiles during temperature cycling experiments. The relaxation behavior of the polymers is discussed in relation to their chemical structures. (C) 1999 John Wiley & Sons, Inc.

Central nervous system drugs: Low temperature X-ray structures of (I) the base 5-(2,3-dichlorophenyl)-2,4-diamino-6-fluoromethyl-pyrimidine (4030W92) and (II) 5-(2,6-dichlorophenyl)-1-H-2,4-diamino-6-methyl-pyrimidine methanesulphonic acid salt (227C89)

The X-ray crystal structures of (I), the base 4030W92, 5-(2,3-dichlorophenyl)-2,4-diamino-6-fluoromethyl-pyrimidine, C11H9Cl2FN4, and (II) 227C89, the methanesulphonic acid salt of 5-(2,6-dichlorophenyl)-1-H-2,4-diamino-6-methyl-pyrimidine, C11H11Cl2N4 center dot CH3O3S, have been carried out at low temperature. A detailed comparison of the two structures is given. Structure (I) is non-centrosymmetric, crystallizing in space group P2(1) with unit cell a = 10.821(3), b = 8.290(3), c = 13.819(4) angstrom, beta = 105.980(6)degrees, V = 1191.8(6) angstrom(3), Z = 4 (two molecules per asymmetric unit) and density (calculated) = 1.600 mg/m(3). Structure (II) crystallizes in the triclinic space group P (1) over bar with unit cell a = 7.686(2), b = 8.233(2), c = 12.234(2) angstrom, alpha = 78.379(4), beta = 87.195(4), gamma = 86.811(4)degrees, V = 756.6(2) angstrom(3), Z = 2, density (calculated) = 1.603 mg/m(3). Final R indices [I > 2sigma(I)] are R1 = 0.0572, wR2 = 0.1003 for (I) and R1 = 0.0558, wR2 = 0.0982 for (II). R indices (all data) are R1 = 0.0983, wR2 = 0.1116 for (I) and R1 = 0.1009, wR2 = 0.1117 for (II). 5- Phenyl-2,4 diaminopyrimidine and 6-phenyl-1,2,4 triazine derivatives, which include lamotrigine (3,5-diamino-6-(2,3-dichlorophenyl)-1,2,4-triazine), have been investigated for some time for their effects on the central nervous system. The three dimensional structures reported here form part of a newly developed data base for the detailed investigation of members of this structural series and their biological activities.

Low temperature X-ray structures of two crystalline forms (I) and (II) of the pyrimidine derivative and sodium channel blocker BW1003C87: 5-(2,3,5-trichlorophenyl)-2,4-diaminopyrimidine

The X-ray crystal structures of two crystalline forms of 5-(2,3,5-trichlorophenyl)-2,4-diaminopyrimidine, C10H7Cl3N4 (code name BW1003C87) (I) and (II), have been carried out at liquid nitrogen temperature. A detailed comparison of the two structures is given. Both are centrosymmetric, with structure (I) in the triclinic space group P (1) over bar unit cell a = 6.4870(10), b = 9.216(2), c = 12.016(2) angstrom, alpha = 75.78(3)degrees, beta = 89.95(3)degrees, gamma = 83.45(3)degrees, V = 691.5(2) angstrom(3), Z = 2 and density (calculated) = 1.544 Mg/m(3); and (II) in the monoclinic space group P2(1)/c, unit cell a = 12.000(2), b = 7.518(2), c = 13.450(3) angstrom, beta = 97.87(3)degrees, V = 1202.0(5) angstrom(3), Z = 4, Density (calculated) = 1.600 Mg/m(3). Structure (I) includes a solvated CH3OH in the lattice. Final R indices [I > 2sigma(I)] are R1 = 0.0427, wR2 = 0.1075 for (I) and R1 = 0.0487, wR2 = 0.1222 for (II). R indices (all data) are R1 = 0.0470, wR2 = 0.1118 for (I) and R1 = 0.0623, wR2 = 0.1299 for (II). 5-Phenyl-2,4 diaminopyrimidine and 6-phenyl-1,2,4 triazine derivatives, which include lamotrigine (3,5-diamino-6-(2,3-dichlorophenyl)-1,2,4-triazine), have been investigated for some time for their effects on the central nervous system. Both lamotrigine and 5-(2,3,5-trichlorophenyl)-2,4-diaminopyrimidine (code name BW1003C87), the subject of the present study, are anticonvulsant as well as neuroprotective in models of brain ischaemia and in a model of white matter ischaemia. BW1003C87 is a sodium channel blocker which also reduces the release of the neurotransmitter glutamate. The three dimensional structures reported here form part of a newly developed data base for the detailed investigation of members of this drug family and their biological activities.

Maintenance of abyssal benthic foraminifera under high pressure and low temperature: some preliminary results

Abyssal benthic foraminifera have been maintained alive for periods of several weeks under laboratory simulated deep-sea conditions of high pressure and low temperature. In separate experiments, bacterial-sized fluorescent microspheres and three species of microalgae were supplied as food particles. Subsequent light and electron microscopy showed that the algae had been ingested by several foraminiferal species. Furthermore, the fine structure of the foraminiferal cytoplasm was well-preserved which indicates, along with the ingestion of algal food, that they had remained in a viable condition during the incubation. Other observations indicate that abyssal benthic foraminifera ingest naturally occurring photosynthetic cells carried to the deep-sea bed by rapidly sedimenting aggregates. The ability to keep foraminifera originating from depths exceeding 4000 m alive in the laboratory paves the way for the experimental investigation of some important issues in deep-sea biology and palaeoceanography.