Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

于批量导入

于批量导入

National Natural Science Foundation of China 60676027 50672079Key Projects of Fujian Science and Technology 2006H0036 National Basic Research Program of China (973 Program) 2007CB613404 New Century Excellent Talents in University This work was supported by the National Natural Science Foundation of China under grant nos.: 60676027 and 50672079, the Key Projects of Fujian Science and Technology (contact no. 2006H0036) and National Basic Research Program of China (973 Program) under grant no. 2007CB613404 and Program for New Century Excellent Talents in University.

[Zhou, Zhiwen; Cai, Zhimeng; Li, Cheng; Lai, Hongkai; Chen, Songyan] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China; [Yu, Jinzhong] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

National Natural Science Foundation of China 60676027 50672079Key Projects of Fujian Science and Technology 2006H0036 National Basic Research Program of China (973 Program) 2007CB613404 New Century Excellent Talents in University This work was supported by the National Natural Science Foundation of China under grant nos.: 60676027 and 50672079, the Key Projects of Fujian Science and Technology (contact no. 2006H0036) and National Basic Research Program of China (973 Program) under grant no. 2007CB613404 and Program for New Century Excellent Talents in University.