Efeitos de fragmentação de hábitat sobre a prevalência de parasitoses intestinais em alouatta belzebul (Primates, Platyrrhini) na Amazônia Oriental

Estudos parasitológicos em populações naturais de primatas neotropicais são relativamente raros, existindo poucos dados disponíveis sobre o guariba-de-mão-ruiva, Alouatta belzebul. No presente estudo, populações de A. belzebul foram amostradas em cinco locais na área do reservatório da Usina Hidrelétrica de Tucuruí no sudeste da Amazônia Brasileira, correspondendo à margem direita do Rio Tocantins. As áreas de coleta incluíram a floresta contínua e fragmentos de hábitats em ilhas, com tamanhos que variaram de 180 a 484 hectares. O principal objetivo deste estudo foi a avaliação dos efeitos da perturbação do hábitat sobre os padrões de infestação por endoparasitas. A densidade populacional foi estimada para cada ponto de coleta usando o método de transecção linear, que variou de 100-108 km percorridos por ponto. Amostras fecais foram coletadas de seis a quatorze grupos em cada local, com um total de 40-46 amostras por ponto (n = 212). As amostras fecais foram fixadas em MIF e observadas através de microscópio óptico, com aumentos de até 400x. A densidade populacional variou entre 66,4 e 191,5 indivíduos por km2. No total, 76,4% das amostras foram positivas para pelo menos uma espécie de endoparasita. Foram identificadas doze táxons de endoparasitas, oito de helmintos e cinco de protozoários. Amostras individuais apresentaram até cinco diferentes espécies de endoparasitas. Em cada local de coleta, o número de espécies identificadas variou entre seis e doze e as taxas de infecção ficaram entre 67,5% e 86%. Não foram encontrados padrões sistemáticos na diversidade de parasitas ou nas taxas de infecção em relação a variáveis como, tamanho de população, densidade ou fragmentação de hábitat. A diversidade e as taxas de infecção variaram mais entre os dois pontos de floresta contínua que nos locais fragmentados e, no geral, foram menores nos locais com menor densidade populacional. A única exceção foi o Trypanoxyuris mirtutus, um oxiurídeo bastante comum transmitido através do contato direto, para o qual foi encontrada uma correlação forte entre as taxas de infecção e a densidade populacional. No geral, foram encontradas poucas evidências capazes de sustentar a hipótese de que a fragmentação do hábitat tem um efeito sistemático nos padrões de infestação em A. belzebul. Contudo, recomenda-se a realização de mais estudos detalhados antes de se estabelecer conclusões definitivas.

Ecologia comportamental de Alouatta belzebul (Linnaeus, 1766) na Amazônia Oriental sob alteração antrópica de hábitat

Dois grupos de guaribas-de-mãos-ruivas (Alouatta belzebul) foram monitorados na Ilha de Germoplasma (Tucuruí, Pará), entre abril e setembro de 2004, enfatizando a ecologia comportamental destes. Os dois grupos de estudo apresentavam tamanho e composição social semelhantes, mas habitavam diferentes tipos de floresta: floresta nativa (grupo P) e plantação de espécies arbóreas nativas (grupo Q). Dados comportamentais quantitativos foram obtidos através da amostragem de varredura instantânea com duração de três minutos e intervalos de dez minutos. O método "todas as ocorrências" foi empregado para registro de atividades raras, como interações sociais e interespecíficas. O repouso foi a atividade predominante em ambos os grupos (P: 67,3%, e Q: 61,9%), seguido de alimentação (P: 15,7%, e Q: 21,4%) e deslocamento (P: 15,8%, e Q: 15,5%). A diferença entre os grupos foi significativa apenas para repouso e alimentação. A dieta foi folívora-frugívora, complementada basicamente por flores. Não foi observado uma variação sazonal na composição da dieta de ambos os grupos de estudo. O grupo da mata nativa (P) ocupou uma área de vida de 5,25 ha, e o grupo da plantação (Q), 5,50 ha. Entretanto, o percurso diário médio percorrido pelo grupo P foi maior (612 m, contra 541 m pelo grupo Q). Ambos os grupos utilizaram preferencialmente seus habitats originais, e preferiram o estrato superior da floresta. As interações interespecificas foram pacíficas, e as interações sociais foram pouco observadas. Os resultados do presente estudo apresentam maiores similaridades com os estudos de A. belzebul realizados em fragmentos de Mata Atlântica do que aqueles realizados na Amazônia (floresta contínua). Isto pode sugerir que a fragmentação de habitat pode ser mais determinante no padrão de atividades dos animais do que as características do bioma. De uma maneira geral, os resultados aqui obtidos concordam com o padrão típico de Alouatta, descrito na literatura.

Hydrogen gas sensing performance of Pt/SnO2 nanowires/SiC MOS devices

This paper presents material and gas sensing properties of Pt/SnO2 nanowires/SiC metal oxide semiconductor devices towards hydrogen. The SnO2 nanowires were deposited onto the SiC substrates by vapour-liquid-solid growth mechanism. The material properties of the sensors were investigated using scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The current-voltage characteristics have been analysed. The effective change in the barrier height for 1% hydrogen was found to be 142.91 meV. The dynamic response of the sensors towards hydrogen at different temperatures has also been studied. At 530°C, voltage shift of 310 mV for 1% hydrogen was observed.

Pt/anodized TiO2/SiC-based MOS device for hydrocarbon sensing

Pt/anodized TiO2/SiC based metal-oxide-semiconductor (MOS) devices were fabricated and characterized for their sensitivity towards propene (C3H6). Titanium (Ti) thin films were deposited onto the SiC substrates using a filtered cathodic vacuum arc (FCVA) method. Fluoride ions containing neutral electrolyte (0.5 wt% NH4F in ethylene glycol)were used to anodize the Ti films. The anodized films were subsequently annealed at 600 °C for 4 hrs in an oxygen rich environment to obtain TiO2. The current-voltage(I-V) characteristics of the Pt/TiO2/SiC devices were measured in different concentrations of propene. Exposure to the analyte gas caused a change in the Schottky barrier height and hence a lateral shift in the I-V characteristics. The effective change in the barrier height for 1% propene was calculated as 32.8 meV at 620°C. The dynamic response of the sensors was also investigated and a voltage shift of 157 mV was measured at 620°C during exposure to 1% propene.

Low-intensity differential photocapacitance of MOS structures

Some new observations on the phenomenon of photocapacitane on n-type silicon MOS structures under low intensities of illumination are reported. The difference between the illuminated and dark C---characteristics is automatically followed as a function of the applied bias thereby obtaining the differential photocapacitance and the resulting characteristics has been termed as the Low Intensity Differential Photocapacitance (LIDP). For an MOS capacitor, the LIDP characteristics is seen to go through a well defined maximum. The phenomenon has been investigated under different ambient conditions like light intensity, temperature, dependance of the frequency of the light etc. and it has been found that the phenomenon is due to a band excband excitation. In this connection, a novel sensitive technique for the measurement of the capacitance based upon following the frequency changes of a tank circuit is also described in some detail. It is also shown that the phenomenon can be understood by a simple theoretical model.

A DLTS technique for surface state capture cross-section measurement of MOS diodes

A modified DLTS technique is proposed for the direct measurement of capture cross-section of MOS surface states. The nature of temperature and energy dependence σn is inferred from data analysis. Temperature dependence of σn is shown to be consistent with the observed DLTS line shapes.

Characterisation of humidity dependence of a metal oxide semiconductor (MOS) sensor array using Partial Least Squares (PLS)

Metal oxide semiconductor (MOS) sensors are a class of chemical sensor that have potential for being a practical core sensor module for an electronic nose system in various environmental monitoring applications. However, the responses of these sensors may be affected by changes in humidity and this must be taken into consideration when developing calibration models. This paper characterises the humidity dependence of a sensor array which consists of 12 MOS sensors. The results were used to develop calibration models using partial least squares. Effects of humidity on the response of the sensor array and predictive ability of partial least squares are discussed. It is shown that partial least squares can provide proper calibration models to compensate for effects caused by changes in humidity.

RF Sputtered Er2O3 Thin Films as High-k Gate Dielectrics for Germanium MOS Devices

We report the material and electrical properties of Erbium Oxide (Er2O3) thin films grown on n-Ge (100) by RF sputtering. The properties of the films are correlated with the processing conditions. The structural characterization reveals that the films annealed at 550 degrees C, has densified as compared to the as-grown ones. Fixed oxide charges and interface charges, both of the order of 10(13)/cm(2) is observed.

I–U Characteristics of MOS Structures on Polycrystalline Silicon

Current-voltage (I–U) characteristics of MOS structures on polycrystalline silicon are investigated. A model based on the carrier transport through the traps in the oxide is described to explain the I–U characteristics.Es werden Strom-Spannungs(I–U)-Charakteristiken von MOS-Strukturen auf polykristallinem Silizium untersucht. Ein Modell zur Erklärung der I–U-Charakteristiken wird beschrieben, das auf dem Ladungstransport über Oxidtraps beruht.

Nature of Electronic States in Atomically Thin MoS(2) Field-Effect Transistors

We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS(2) films, mechanically exfoliated onto Si/SiO(2) substrate. Our experiments reveal that the electronic states In all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below similar to 30 K, the conductivity displays oscillatory structures In gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T(0)) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges In the substrate is the dominant source of disorder in MoS(2) field-effect devices, which leads to carrier localization, as well.

Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO2) films. The films were formed on Corning glass and p-Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6x10-2 Pa and at different substrate temperatures in the range 303 673 K. The films formed at 303 K were X-ray amorphous whereas those deposited at substrate temperatures?=?473 K were transformed into polycrystalline nature with anatase phase of TiO2. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic bonding configuration of TiO2. The surface morphology of the films was significantly influenced by the substrate temperature. MOS capacitor with Al/TiO2/p-Si sandwich structure was fabricated and performed currentvoltage and capacitancevoltage characteristics. At an applied gate voltage of 1.5 V, the leakage current density of the device decreased from 1.8?x?10-6 to 5.4?x?10-8 A/cm2 with the increase of substrate temperature from 303 to 673 K. The electrical conduction in the MOS structure was more predominant with Schottky emission and Fowler-Nordheim conduction. The dielectric constant (at 1 MHz) of the films increased from 6 to 20 with increase of substrate temperature. The optical band gap of the films increased from 3.50 to 3.56 eV and refractive index from 2.20 to 2.37 with the increase of substrate temperature from 303 to 673 K. Copyright (c) 2012 John Wiley & Sons, Ltd.

Modeling and analysis of MOS capacitor controlled by independent double gates

This paper, for the first time, explores the charcatersictics of MOS capacitor controlled by independent double gates by numerical simulation and analytical modeling for its possible use in RF circuit design as a varactor. By numerical simulation it is shown how the quasi-static and non-quasi-static characteristics of the first gate capacitance could be tuned by the second gate biases. Effect of body doping and energy quantization are also discussed in this regard. A semi-empirical quasi-static model is also developed by using the existing incomplete Poisson solution of independent double gate transistors. Proposed model, which is valid from accumulation to inversion, is shown to have excellent agreement with numerical simulation for practical bias conditions.

Effect of film thickness and annealing on optical properties of TiO2 thin films and electrical characterization of MOS capacitors

Titanium dioxide (TiO2) thin films were deposited on glass and silicon (100) substrates by the sol-gel method. The influence of film thickness and annealing temperature on optical transmittance/reflectance of TiO2 films was studied. TiO2 films were used to fabricate metal-oxide-semiconductor capacitors. The capacitance-voltage (C-V), dissipation-voltage (D-V) and current-voltage (I-V) characteristics were studied at different annealing temperatures and the dielectric constant, current density and resistivity were estimated. The loss tangent (dissipation) increased with increase of annealing temperature.

Growth of TiO2 Films by RF Magnetron Sputtering for MOS Gate Dielectrics: Influence of Substrate Temperature

Titanium dioxide thin films were deposited by RF reactive magnetron sputtering technique on p-type silicon(100) substrates held at temperatures in the range 303-673 K. The influence of substrate temperature on the core level binding energies, chemical bonding configuration, crystallographic structure and dielectric properties was investigated. X-ray photoelectron spectroscopy studies and Fourier transform infrared transmittance data confirmed the formation of stoichiometric films with anatase phase at a substrate temperature of 673 K. The films formed at 303 K were nanocrystalline with amorphous matrix while those deposited at 673 K were transformed in to crystalline phase and growth of grains in pyramidal like structure as confirmed by X-ray diffraction and atomic force microscopy respectively. Metal-oxide-semiconductor capacitors were fabricated with the configuration of Al/TiO2/Si structures. The current voltage, capacitance voltage and conductance voltage characteristics were studied to understand the electrical conduction and dielectric properties of the MOS devices. The leakage current density (at gate voltage of 2 V) decreased from 2.2 x 10(-6) to 1.7 x 10(-7) A/cm(2), the interface trap density decreased from 1.2 x 10(13) to 2.1 x 10(12) cm(-2) eV(-1) and the dielectric constant increased from 14 to 36 with increase of substrate temperature from 303 to 673 K.

Part I: High-Voltage MOS Device Design for Improved Static and RF Performance

In this paper, for the first time, the key design parameters of a shallow trench isolation-based drain-extended MOS transistor are discussed for RF power applications in advanced CMOS technologies. The tradeoff between various dc and RF figures of merit (FoMs) is carefully studied using well-calibrated TCAD simulations. This detailed physical insight is used to optimize the dc and RF behavior, and our work also provides a design window for the improvement of dc as well as RF FoMs, without affecting the breakdown voltage. An improvement of 50% in R-ON and 45% in RF gain is achieved at 1 GHz. Large-signal time-domain analysis is done to explore the output power capability of the device.