Pt/anodized TiO2/SiC-based MOS device for hydrocarbon sensing
Contribuinte(s) |
Al-Sarawi, Said F. Varadan, Vijay K. Weste, Neil Kalantar-Zadeh, Kourosh |
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Data(s) |
2008
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Resumo |
Pt/anodized TiO2/SiC based metal-oxide-semiconductor (MOS) devices were fabricated and characterized for their sensitivity towards propene (C3H6). Titanium (Ti) thin films were deposited onto the SiC substrates using a filtered cathodic vacuum arc (FCVA) method. Fluoride ions containing neutral electrolyte (0.5 wt% NH4F in ethylene glycol)were used to anodize the Ti films. The anodized films were subsequently annealed at 600 °C for 4 hrs in an oxygen rich environment to obtain TiO2. The current-voltage(I-V) characteristics of the Pt/TiO2/SiC devices were measured in different concentrations of propene. Exposure to the analyte gas caused a change in the Schottky barrier height and hence a lateral shift in the I-V characteristics. The effective change in the barrier height for 1% propene was calculated as 32.8 meV at 620°C. The dynamic response of the sensors was also investigated and a voltage shift of 157 mV was measured at 620°C during exposure to 1% propene. |
Formato |
application/pdf |
Identificador | |
Publicador |
SPIE |
Relação |
http://eprints.qut.edu.au/59613/1/SPIE_Mahnaz_Shafiei_2008.pdf DOI:10.1117/12.810108 Shafiei, M., Sadek, A.Z., Yu, J., Arsat, R., Kalantar-zadeh, K., Yu, X.F., Partridge, J.G., & Wlodarski, W. (2008) Pt/anodized TiO2/SiC-based MOS device for hydrocarbon sensing. In Al-Sarawi, Said F., Varadan, Vijay K., Weste, Neil, & Kalantar-Zadeh, Kourosh (Eds.) Smart Structures, Devices, and Systems IV, SPIE, Melbourne, VIC, 72680K-72680K. |
Direitos |
Copyright 2008 SPIE |
Fonte |
Science & Engineering Faculty |
Palavras-Chave | #030107 Sensor Technology (Chemical aspects) #100708 Nanomaterials #100712 Nanoscale Characterisation #Gas sensor #propene #TiO2 #Schottky diode |
Tipo |
Conference Paper |