Application of step-scan FTIR to the research of quantum cascade lasers

The principle of step-scan Fourier transform infrared （FTIR） spectroscopy is introduced. Double modulation step-scan FTIR technique is used to obtain the quantum cascade laser＇s stacked emission spectra in the time domain. Optical property and thermal accumulation of devices due to large drive current are analyzed.

FTIR study of poly(propylene carbonate)/bisphenol A blends

A systematic investigation by FTIR spectroscopy was undertaken on blends of poly(propylene carbonate) (PPC) and bisphenol A (BPA). It provided direct evidence of the hydrogen bond (H-bond) between BPA O-H groups and PPC C=O groups. Using a curve-fitting method, qualitative as well as quantitative information concerning this H-bond interaction was obtained. The inter-H-bond in PPC/BPA blends was weaker than the self-H-bond in BPA. The absorptivities of the free and the H-bonded C=O groups were nearly equal. The fraction of H-bonded C=O in the blends increased with BPA content and leveled off at a value close to 40%. Finally, FTIR-temperature measurements of pure PPC and a representative blend were reported: by monitoring the peak areas of C=O absorptions, the dissociation of the inter-H-bonds and the thermal degradation of PPC were observed. It revealed that the presence of BPA clearly retarded the thermal degradation of PPC.

Quantitative FTIR study of PHBV/bisphenol A blends

FTIR spectroscopy was used to verify the presence of intermolecular hydrogen bond (inter-H-bond) between poly-(3-hydroxybutyrate co-3-hydroxyvalerate) (PHBV) and bisphenol A (BPA). By monitoring the spectral changes during PHBV crystallization and blends dissociation, the absorptivity ratio of C=O bonds in crystalline and amorphous regions in PHBV and that of H-bonded and free C=O in PHBV/BPA blends were experimentally determined as 1.40 and 1.68, respectively. Using curve-fitting program, the C=O absorptions in spectra of blends were ascribed to three types of bonds: amorphous, crystalline and H-bonded C=O. The crystallinity of PHBV and the fraction of H-bonded C=O were calculated. These results indicated that the H-bond clearly suppressed the PHBV crystallization. Furthermore, the fraction of BPA molecules that simultaneously formed two hydrogen bonds (H-bonds) with C=O was estimated. It revealed that there existed a H-bond network in PHBV/BPA blends. This network was compared with the covalent network by estimating the number of atoms between every two adjacent crosslink points in chain. Up to the high density of H-bond discussed in this paper, there was always a certain part in PHBV that crystallized due to the dynamic character of hydrogen bonds; however, the hydrogen bonds significantly reduced the crystallization rate of PHBV.

In-situ FTIR spectroelectrochemical investigation of cobalt(II)-cyanoferrate polymeric film coated on a glassy carbon electrode

Cobalt(II)-cyanoferrate polymeric film has been electrochemically deposited on a glassy carbon electrode and investigated by cyclic voltammetry and in-situ reflection FTIR spectroscopy. A reorientation of the terminal C=N groups upon redox reactions was proposed. The stretching vibration mode of the terminal C=N groups associated with Fe(III) was observed at 2122 cm(-1), however, the stretching vibration mode for terminal groups associated with Fe(II) did not appear. This process could result in a switch between lattice-closed and lattice-opened surface structure. (C) 1997 Elsevier Science B.V.

PHASE-BEHAVIOR IN MIXTURES OF A HOMOPOLYMER AND A BLOCK-COPOLYMER .1. FTIR AND DSC STUDIES

Miscibility in blends of three styrene-butadiene-styrene and one styrene-isoprene-styrene triblock copolymers containing 28%, 30%, 48%, and 14% by weight of polystyrene, respectively, with poly(vinyl methyl ether) (PVME) were investigated by FTIR spectroscopy and differential scanning calorimetry (DSC). It was found from the optical clarity and the glass transition temperature behavior that the blends show miscibility for each kind of triblock copolymers below a certain concentration of PVME. The concentration range to show miscibility becomes wider as the polystyrene content and molecular weight of PS segment in the triblock copolymers increase. From the FTIR results, the relative peak intensity of the 1100 cm-1 region due to COCH3 band of PVME and peak position of 698 cm-1 region due to phenyl ring are sensitive to the miscibility of SBS(SIS)/PVME blends. The results show that the miscibility in SBS(SIS)/PVME blends is greatly affected by the composition of the copolymers and the polystyrene content in the triblock copolymers. Molecular weights of polystyrene segments have also affected the miscibility of the blends. (C) 1995 John Wiley & Sons, Inc.

Electrochemical, spectroscopic and SPM evidence for the controlled formation of self-assembled monolayers and organised multilayers of ferrocenyl alkyl thiols on Au(111)

Organised multilayers were formed from the controlled self-assembly of ferrocene alkyl thiols on Au(111) surfaces. The control was accomplished by increasing the concentration of the thiol solutions used for the assembly. Cyclic voltammetry, ellipsometry, scanning probe microscopy (STM and AFM) and in situ FTIR spectroscopy were used to probe the differences between mono- and multilayers of the same compounds. Electrochemical desorption studies confirmed that the multilayer structure is attached to the surface via one monolayer. The electrochemical behaviour of the multilayers indicated the presence of more than one controlling factor during the oxidation step, whereas the reduction was kinetically controlled which contrasts with the behaviour of monolayers, which exhibit kinetic control for the oxidation and reduction steps. Conventional and imaging ellipsometry confirmed that multilayers with well-defined increments in thickness could be produced. However, STM indicated that at the monolayer stage, the thiols used promote the mobility of Au atoms on the surface. It is very likely that the multilayer structure is held together through hydrogen bonding. To the best of out knowledge, this is the first example of a controlled one-step growth of multilayers of ferrocenyl alkyl thiols using self-assembly techniques.

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film

Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200degreesC. The effect of rapid thermal annealing and hydrogen plasma treatment on tire microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600degreesC, while it increases with increasing annealing temperature from 600 to 900degreesC. The light-emission of the films are enhanced with increasing annealing temperature up to 500degreesC, while it is rapidly reduced when the annealing temperature exceeds 600degreesC. The peak position of the PL spectrum blueshifts by annealing at the temperature of 300degreesC, then it red-shifts with further raising annealing temperature. The following hydrogen plasma treatment results in a disproportionate increase of the PL intensity and a blueshift or redshift of the peak positions, depending on the pristine annealing temperature. It is thought that the size of amorphous silicon clusters, surface structure of the clusters and the distribution of hydrogen in the films can be changed during the annealing procedure. The results indicate that not only cluster size but also surface state of the clusters plays an important role in the determination of electronic structure of the amorphous silicon cluster and recombination process of light-generated carriers.

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.

Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures

Si thin films with different structures were deposited by plasma enhanced chemical vapor deposition (PECVD), and characterized via Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy. The passivation effect of such different Si thin films on crystalline Si surface was investigated by minority carrier lifetime measurement via a method, called microwave photoconductive decay (mu PCD), for the application in HIT (heterojunction with intrinsic thin-layer) solar cells. The results show that amorphous silicon (a-Si:H) has a better passivation effect due to its relative higher H content, compared with microcrystalline (mu c-Si) silicon and nanocrystalline silicon (nc-Si). Further, it was found that H atoms in the form of Si-H bonds are more preferred than those in the form of Si-H-2 bonds to passivate the crystalline Si surface. (C) 2009 Elsevier B.V. All rights reserved.

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.