Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD
Data(s) |
2001
|
---|---|
Resumo |
Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved. Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:16导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:16Z (GMT). No. of bitstreams: 1 2906.pdf: 103467 bytes, checksum: 15ab19d28632ec18e8b3b9f573e4abb6 (MD5) Previous issue date: 2001 Chinese Acad Sci, Grad Sch, Dept Phys, Beijing 100039, Peoples R China; Chinese Acad Sci, Lab Semicond Mat Sci, Beijing 100039, Peoples R China; Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100084, Peoples R China |
Identificador | |
Idioma(s) |
英语 |
Publicador |
ELSEVIER SCIENCE SA PO BOX 564, 1001 LAUSANNE, SWITZERLAND |
Fonte |
Feng Y; Zhu M; Liu F; Liu J; Han H; Han Y .Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD .见:ELSEVIER SCIENCE SA .THIN SOLID FILMS, 395 (1-2),PO BOX 564, 1001 LAUSANNE, SWITZERLAND ,2001,213-216 |
Palavras-Chave | #半导体材料 #poly-Si #structure #hot-wire #plasma-enhanced chemical vapor deposition (PECVD) #CHEMICAL-VAPOR-DEPOSITION #MICROCRYSTALLINE SILICON #HYDROGEN |
Tipo |
会议论文 |