Wire array photovoltaics

Over the past five years, the cost of solar panels has dropped drastically and, in concert, the number of installed modules has risen exponentially. However, solar electricity is still more than twice as expensive as electricity from a natural gas plant. Fortunately, wire array solar cells have emerged as a promising technology for further lowering the cost of solar.

Si wire array solar cells are formed with a unique, low cost growth method and use 100 times less material than conventional Si cells. The wires can be embedded in a transparent, flexible polymer to create a free-standing array that can be rolled up for easy installation in a variety of form factors. Furthermore, by incorporating multijunctions into the wire morphology, higher efficiencies can be achieved while taking advantage of the unique defect relaxation pathways afforded by the 3D wire geometry.

The work in this thesis shepherded Si wires from undoped arrays to flexible, functional large area devices and laid the groundwork for multijunction wire array cells. Fabrication techniques were developed to turn intrinsic Si wires into full p-n junctions and the wires were passivated with a-Si:H and a-SiNx:H. Single wire devices yielded open circuit voltages of 600 mV and efficiencies of 9%. The arrays were then embedded in a polymer and contacted with a transparent, flexible, Ni nanoparticle and Ag nanowire top contact. The contact connected >99% of the wires in parallel and yielded flexible, substrate free solar cells featuring hundreds of thousands of wires.

Building on the success of the Si wire arrays, GaP was epitaxially grown on the material to create heterostructures for photoelectrochemistry. These cells were limited by low absorption in the GaP due to its indirect bandgap, and poor current collection due to a diffusion length of only 80 nm. However, GaAsP on SiGe offers a superior combination of materials, and wire architectures based on these semiconductors were investigated for multijunction arrays. These devices offer potential efficiencies of 34%, as demonstrated through an analytical model and optoelectronic simulations. SiGe and Ge wires were fabricated via chemical-vapor deposition and reactive ion etching. GaAs was then grown on these substrates at the National Renewable Energy Lab and yielded ns lifetime components, as required for achieving high efficiency devices.

Design of a timber Howe truss highway bridge

The span of the bridge was assumed as 100 feet. The type of bridge used is the timber Howe Truss. The height of truss was taken as 20 feet between center lines of top and bottom chords. The width was taken as 18 feet center to center of trusses. The truss was divided up into five panels 20 feet long.

It was designed according to the "General Specifications for Steel Highway Bridges" by Ketchum. For the live load for the floor and its supports, a load of 80 pounds per square foot of total floor surface or a 15 ton traction engine with axles 10 feet centers and 6 feet gage, two thirds of load to be carried by rear axles.

For the truss a load of 75 pounds per square foot of floor surface.

For the wind load the bottom lateral bracing is to be designed to resist a lateral wind load of 300 pounds per foot of span; 150 pounds of this to be treated as a moving load.

The top lateral bracing is to be designed to resist a lateral wind force of 150 pounds per foot of span.

The timber to be used in the bridge is to be Douglas fir.

The unit stresses used for timber are those of the American Railway Engineering Association.