Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces

Two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(311)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows deferring from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-xAs solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [01 (1) over bar] and [(2) over bar 33], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between neighbouring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. Photoluminescence (PL) result demonstrates that QDs grown on (311)B have the narrowest linewidth and the strongest integrated intensity, compared to those grown on (100) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces

The two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(3 1 1)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows differing from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-As-x solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [0 1 (1) over bar] and [(2) over bar 3 3], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between the neighboring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. The photoluminescence (PL) result demonstrates that QDs grown on (3 1 1)B have the narrowest linewidth and the strongest integrated intensity, compared to those on (1 0 0) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Distinct two dimensional lateral ordering of self-assembled quantum dots

We report a quantum dot (QD) ensemble structure in which the in-plane arrangements of the dots are in a hexagonal way while the dots are also vertically aligned. Such a distinct lateral ordering of QDs is achieved on a planar GaAs(l 0 0) rather than on a prepatterned substrate by strain-mediated multilayer vertical stacking of the QDs. The analysis indicates that the strain energy of the lateral island-island interaction is minimum for arrangement of the hexagonal ordering. The ordered dots demonstrate strong photoluminescence (PL) emission at room temperature (RT) and the full width at half maximum of PL peak at RT is only 50 meV. (C) 2007 Elsevier B.V. All rights reserved.

Stability of two-dimensional Roesser systems with time-varying delays via novel 2D finitesum inequalities

This study considers the problem of stability analysis of discrete-time two-dimensional (2D) Roesser systems with interval time-varying delays. New 2D finite-sum inequalities, which provide a tighter lower bound than the existing ones based on 2D Jensen-type inequalities, are first developed. Based on an improved Lyapunov-Krasovskii functional, the newly derived inequalities are then utilised to establish delay-range-dependent linear matrix inequality-based stability conditions for a class of discrete time-delay 2D systems. The effectiveness of the obtained results is demonstrated by numerical examples.

Analytical studies of gain optimization in CO2-N2 gasdynamic lasers employing two-dimensional wedge nozzles

An analytical method has been proposed to optimise the small-signaloptical gain of CO2-N2 gasdynamic lasers (gdl) employing two-dimensional (2D) wedge nozzles. Following our earlier work the equations governing the steady, inviscid, quasi-one-dimensional flow in the wedge nozzle of thegdl are reduced to a universal form so that their solutions depend on a single unifying parameter. These equations are solved numerically to obtain similar solutions for the various flow quantities, which variables are subsequently used to optimize the small-signal-gain. The corresponding optimum values like reservoir pressure and temperature and 2D nozzle area ratio also have been predicted and graphed for a wide range of laser gas compositions, with either H2O or He as the catalyst. A large number of graphs are presented which may be used to obtain the optimum values of small signal gain for a wide range of laser compositions without further computations.

Predicting a new phase (T′′) of two-dimensional transition metal di-chalcogenides and strain-controlled topological phase transition

Single layered transition metal dichalcogenides have attracted tremendous research interest due to their structural phase diversities. By using a global optimization approach, we have discovered a new phase of transition metal dichalcogenides (labelled as T′′), which is confirmed to be energetically, dynamically and kinetically stable by our first-principles calculations. The new T′′ MoS2 phase exhibits an intrinsic quantum spin Hall (QSH) effect with a nontrivial gap as large as 0.42 eV, suggesting that a two-dimensional (2D) topological insulator can be achieved at room temperature. Most interestingly, there is a topological phase transition simply driven by a small tensile strain of up to 2%. Furthermore, all the known MX2 (M = Mo or W; X = S, Se or Te) monolayers in the new T′′ phase unambiguously display similar band topologies and strain controlled topological phase transitions. Our findings greatly enrich the 2D families of transition metal dichalcogenides and offer a feasible way to control the electronic states of 2D topological insulators for the fabrication of high-speed spintronics devices.

Highly Enhanced Thermopower in Two-Dimensional Electron Systems at Millikelvin Temperatures

We report experimental observation of an unexpectedly large thermopower in mesoscopic two-dimensional (2D) electron systems in GaAs/AlGaA heterostructures at sub-Kelvin temperatures and zero magnetic field. Unlike conventional nonmagnetic high-mobility 2D systems, the thermopower in our devices increases with decreasing temperature below 0.3 K, reaching values in excess of 100 mu V/K, thus exceeding the free electron estimate by more than 2 orders of magnitude. With support from a parallel study of the local density of states, we suggest such a phenomenon to be linked to intrinsic localized states and many-body spin correlations in the system.

Shape-Dependent Confinement in Ultrasmall Zero-, One-, and Two-Dimensional PbS Nanostructures

Spatial dimensionality affects the degree of confinement when an electron-hole pair is squeezed from one or more dimensions approaching the bulk exciton Bohr radius (alpha(B)) limit. The etectron-hole interaction in zero-dimensional (0D) dots, one-dimensional (1D) rods/wires, and two-dimensional (2D) wells/sheets should be enhanced by the increase in confinement dimensions in the order 0D > 1D > 2D. We report the controlled synthesis of PbS nanomateriats with 0D, 1D, and 2D forms retaining at least one dimension in the strongly confined regime far below alpha(B) (similar to 10 nm for PbS) and provide evidence through varying the exciton-phonon coupling strength that the degree of confinement is systematically weakened by the loss of confinement dimension. Geometry variations show distinguishable far-field optical polarizations, which could find useful applications in polarization-sensitive devices.

Line tension of a two dimensional gas-liquid interface

In two dimensional (2D) gas-liquid systems, the reported simulation values of line tension are known to disagree with the existing theoretical estimates. We find that while the simulation erred in truncating the range of the interaction potential, and as a result grossly underestimated the actual value, the earlier theoretical calculation was also limited by several approximations. When both the simulation and the theory are improved, we find that the estimate of line tension is in better agreement with each other. The small value of surface tension suggests increased influence of noncircular clusters in 2D gas-liquid nucleation, as indeed observed in a recent simulation.

Generalized self-assembly of scalable two-dimensional transition metal oxide nanosheets

Two-dimensional (2D) transition metal oxide systems present exotic electronic properties and high specific surface areas, and also demonstrate promising applications ranging from electronics to energy storage. Yet, in contrast to other types of nanostructures, the question as to whether we could assemble 2D nanomaterials with an atomic thickness from molecules in a general way, which may give them some interesting properties such as those of graphene, still remains unresolved. Herein, we report a generalized and fundamental approach to molecular self-assembly synthesis of ultrathin 2D nanosheets of transition metal oxides by rationally employing lamellar reverse micelles. It is worth emphasizing that the synthesized crystallized ultrathin transition metal oxide nanosheets possess confined thickness, high specific surface area and chemically reactive facets, so that they could have promising applications in nanostructured electronics, photonics, sensors, and energy conversion and storage devices.

Graphene-like two-dimensional ionic boron with double dirac cones at ambient condition

Recently, partially ionic boron (γ-B28) has been predicted and observed in pure boron, in bulk phase and controlled by pressure [Nature, 457 (2009) 863]. By using ab initio evolutionary structure search, we report the prediction of ionic boron at a reduced dimension and ambient pressure, namely, the two-dimensional (2D) ionic boron. This 2D boron structure consists of graphene-like plane and B2 atom pairs, with the P6/mmm space group and 6 atoms in the unit cell, and has lower energy than the previously reported α-sheet structure and its analogues. Its dynamical and thermal stability are confirmed by the phonon-spectrum and ab initio molecular dynamics simulation. In addition, this phase exhibits double Dirac cones with massless Dirac fermions due to the significant charge transfer between the graphene-like plane and B2 pair that enhances the energetic stability of the P6/mmm boron. A Fermi velocity (vf) as high as 2.3 x 106 m/s, which is even higher than that of graphene (0.82 x 106 m/s), is predicted for the P6/mmm boron. The present work is the first report of the 2D ionic boron at atmospheric pressure. The unique electronic structure renders the 2D ionic boron a promising 2D material for applications in nanoelectronics.

Cell-dynamical simulation of magnetic hysteresis in the two-dimensional Ising system

We present results from numerical simulations using a ‘‘cell-dynamical system’’ to obtain solutions to the time-dependent Ginzburg-Landau equation for a scalar, two-dimensional (2D), (Φ2)2 model in the presence of a sinusoidal external magnetic field. Our results confirm a recent scaling law proposed by Rao, Krishnamurthy, and Pandit [Phys. Rev. B 42, 856 (1990)], and are also in excellent agreement with recent Monte Carlo simulations of hysteretic behavior of 2D Ising spins by Lo and Pelcovits [Phys. Rev. A 42, 7471 (1990)].

Evidence for decoupled two-dimensional vortex behavior of YBa2Cu3O7-delta in La0.7Sr0.3MnO3/YBa2Cu3O7-delta/La0.7Sr0.3MnO3 trilayer

We investigate the vortex behavior of YBa2Cu3O7-delta thin films sandwiched between two ferromagnetic layers (La0.7Sr0.3MnO3/YBa2Cu3O7-delta/La0.7Sr0.3MnO3). The magnetization study on La0.7Sr0.3MnO3/YBa2Cu3O7-delta/La0.7Sr0.3MnO3 trilayers conspicuously shows the presence of both ferromagnetic and diamagnetic phases. The magnetotransport study on the trilayers reveals a significant reduction in the activation energy (U) for the vortex motion in YBa2Cu3O7-delta. Besides, the ``U'' exhibits a logarithmic dependence on the applied magnetic field which directly indicates the existence of decoupled two-dimensional (2D) pancake vortices present in the CuO2 layers. The evidence of 2D decoupled vortex behavior in La0.7Sr0.3MnO3/YBa2Cu3O7-delta/La0.7Sr0.3MnO3 is believed to arise from (a) the weakening of superconducting coherence length along the c-axis and (b) enhanced intraplane vortex-vortex interaction due to the presence of ferromagnetic layers. (C) 2010 American Institute of Physics. doi: 10.1063/1.3524545]

Evidence for decoupled two-dimensional vortex behavior of YBa2Cu3O7-δ in La0.7Sr0.3MnO3/YBa2Cu3O7-δ/La0.7Sr0.3MnO3 trilayer

We investigate the vortex behavior of YBa2Cu3O7−δ thin films sandwiched between two ferromagnetic layers (La0.7Sr0.3MnO3/YBa2Cu3O7−δ/La0.7Sr0.3MnO3). The magnetization study on La0.7Sr0.3MnO3/YBa2Cu3O7−δ/La0.7Sr0.3MnO3 trilayers conspicuously shows the presence of both ferromagnetic and diamagnetic phases. The magnetotransport study on the trilayers reveals a significant reduction in the activation energy (U) for the vortex motion in YBa2Cu3O7−δ. Besides, the “U” exhibits a logarithmic dependence on the applied magnetic field which directly indicates the existence of decoupled two-dimensional (2D) pancake vortices present in the CuO2 layers. The evidence of 2D decoupled vortex behavior in La0.7Sr0.3MnO3/YBa2Cu3O7−δ/La0.7Sr0.3MnO3 is believed to arise from (a) the weakening of superconducting coherence length along the c-axis and (b) enhanced intraplane vortex–vortex interaction due to the presence of ferromagnetic layers.

On the two dimensional effective electron mass in quantum wells, inversion layers and NIPI superlattices of Kane type semiconductors in the presence of strong light waves: Simplified theory and relative comparison

An attempt is made to study the two dimensional (2D) effective electron mass (EEM) in quantum wells (Qws), inversion layers (ILs) and NIPI superlattices of Kane type semiconductors in the presence of strong external photoexcitation on the basis of a newly formulated electron dispersion laws within the framework of k.p. formalism. It has been found, taking InAs and InSb as examples, that the EEM in Qws, ILs and superlattices increases with increasing concentration, light intensity and wavelength of the incident light waves, respectively and the numerical magnitudes in each case is band structure dependent. The EEM in ILs is quantum number dependent exhibiting quantum jumps for specified values of the surface electric field and in NIPI superlattices; the same is the function of Fermi energy and the subband index characterizing such 2D structures. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the EEM varies in various manners with all the variables as evident from all the curves, the rates of variations totally depend on the specific dispersion relation of the particular 2D structure. Under certain limiting conditions, all the results as derived in this paper get transformed into well known formulas of the EEM and the electron statistics in the absence of external photo-excitation and thus confirming the compatibility test. The results of this paper find three applications in the field of microstructures. (C) 2011 Elsevier Ltd. All rights reserved.