991 resultados para tin dioxide films


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Mn(II) doped SnO2 thin films used for shielding fluoride glasses against corrosion were investigated by x-ray absorption spectroscopy (EXAFS and XANE)S at the Sn and Mn K-edges. The effect of firing treatment on the densification of the films was studied. It has been evidenced a partial change of Mn valence from 2.3 to 2.6 upon heating which is attributed to a change of ratios of two Mn sites: grafted divalent Mn ions at the surface of SnO 2 nanocrystallites and trivalent Mn ions embedded into a substitutional solid solution with Sn. © Physica Scripta 2005.

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The surface formation energies of four low-indexed surfaces, including (001), (100), (110) and (011), of tin dioxide (SnO2) terminated by nonmetals (H, N, O, F, Cl, Br, and I) have been studied with the frameworks of density functional theory. A strong dependence of relative surface stabilities on surface atoms has been presented based on the calculations. Several instructions, in particular the selection of specific precursors and morphology controlling agents, have been further illustrated as a guideline for experimentalists.

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Thin films of indium-tin oxide have been deposited by DC diode sputtering from an indium-tin alloy target in an argon, hydrogen and oxygen atmosphere. Films with sheet resistance of 11 ohms/square and 80% light transmission have been obtained. The effect of cathode composition and gas mixture on sheet resistance and optical transmission properties of the films have been studied.

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Titanium oxide (Titania) thin films were synthesized on different substrates via the sol-gel dip-coating method using alkoxide solution. Some selected samples were also prepared with different percentage of Lead (Pb). The influence of Pb addition in precursor sol on the optical properties of titanium dioxide thin films was studied. The optical transmittance in the visible region has increased with increase in weight percentage of lead. The refractive index was slightly decreased with Pb addition. Crystallization of these coatings was achieved through thermal annealing at temperatures above 400 degrees C. The structural properties and surface morphology of the crystallized coatings were studied by Scanning Electron Microscopy. Increase in average grain size from 250 nm to 350 nm with increase in Pb concentration is observed. Films were appeared to more coarse with increase in Pb addition. An increase in Pb addition resulted increase in average roughness from 12 nm to 25 nm.

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Conduction through TiO2 films of thickness 100 to 450 Å have been investigated. The samples were prepared by either anodization of Ti evaporation of TiO2, with Au or Al evaporated for contacts. The anodized samples exhibited considerable hysteresis due to electrical forming, however it was possible to avoid this problem with the evaporated samples from which complete sets of experimental results were obtained and used in the analysis. Electrical measurements included: the dependence of current and capacitance on dc voltage and temperature; the dependence of capacitance and conductance on frequency and temperature; and transient measurements of current and capacitance. A thick (3000 Å) evaporated TiO2 film was used for measuring the dielectric constant (27.5) and the optical dispersion, the latter being similar to that for rutile. An electron transmission diffraction pattern of a evaporated film indicated an essentially amorphous structure with a short range order that could be related to rutile. Photoresponse measurements indicated the same band gap of about 3 ev for anodized and evaporated films and reduced rutile crystals and gave the barrier energies at the contacts.

The results are interpreted in a self consistent manner by considering the effect of a large impurity concentration in the films and a correspondingly large ionic space charge. The resulting potential profile in the oxide film leads to a thermally assisted tunneling process between the contacts and the interior of the oxide. A general relation is derived for the steady state current through structures of this kind. This in turn is expressed quantitatively for each of two possible limiting types of impurity distributions, where one type gives barriers of an exponential shape and leads to quantitative predictions in c lose agreement with the experimental results. For films somewhat greater than 100 Å, the theory is formulated essentially in terms of only the independently measured barrier energies and a characteristic parameter of the oxide that depends primarily on the maximum impurity concentration at the contacts. A single value of this parameter gives consistent agreement with the experimentally observed dependence of both current and capacitance on dc voltage and temperature, with the maximum impurity concentration found to be approximately the saturation concentration quoted for rutile. This explains the relative insensitivity of the electrical properties of the films on the exact conditions of formation.

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Thick paste TiO2 films are prepared and tested for photocatalytic and photoinduced superhydrophilic (PSH) activity. The films are effective photocatalysts for the destruction of stearic acid using near or far UV and all the sol-gel films tested exhibited a quantum yield for this process of typically 0.15 %. These quantum yields are significantly greater (4-8-fold) than those for titania films produced by an APCVD technique, including the commercial self-cleaning glass product Activ(TM). The films are mechanically robust and optically clear and, as photocatalysts for stearic acid removal, are photochemically stable and reproducible. The kinetics of stearic acid photomineralisation are zero order with an activation energy of ca. 2.5 Kj mol(-1). All titania films tested, including those produced by APCVD, exhibit PSH. The light-induced fall, and dark recovery, in the water droplet contact angle made with titania paste films are similar in profile shape to those described by others for thin titania films produced by a traditional sol-gel route. (C) 2003 Elsevier Science B.V. All rights reserved.

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Focusing here on the effects of zinc doping in a nanocrystalline matrix of tin dioxide, inverse opal prototype sensors are presented and extensively studied as superior candidates for gas sensing applications. Courtesy of factors including controlled porosity, enhanced surface to volume ratio and homogeneous dispersion of species in the crystalline lattice assured by the sol–gel technique, prototype sensors were prepared with high dopant ratios in a range of new compositions. Exploiting their high sensitivities to low-gas concentrations at low working temperatures, and thanks to the presented templated sol–gel approach, the prepared sensors open up new frontiers in compositional control over the sensing oxide materials, consequently widening the possibilities available in on-demand gas sensor synthesis.

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SnO2 nanoribbons have been synthesized by annealing of a milled SnO2 powder, which is able to evaporate efficiently at the temperature as low as 1100 °C due to the metastable structure created by ball milling treatment. When the milled powder was annealed in an assembly of two combustion boats, SnO2 nanoribbons formed on the surface of the milled powder. The nanoribbons tend to grow along the [101] crystallographic direction and their side surfaces are represented by ±(010) and ±(101) facets. The oxygen plays an important role in enhancing their formation.

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In this study, one-dimensional and quasi-one-dimensional tin dioxide nanowires and nan-owalls were fabricated by the use of the chemical vapor deposition technique. It was demonstrated that the growth and nanostructure of tin oxide can be controlled by varying the thickness of gold layer and the partial pressure of vapor at growing sites. Nanowires with a core-shell structure, i.e., pure tin core and tin oxide shell, were synthesized from C-SnO2 powders at a mol ratio of C/SnO2=3/5 on both silicon and Lanthanum Strontium Co-balt Ferrite ceramic wafers through the vapor-solid mechanism. The conditions that are favorable to the growth of core-shell structure nanowires are investigated.

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The electrical conductivity of Mn doped SnO2 systems prepared by an organic route (Pechini's method) has been investigated as a function of antimony and niobium concentration. The conductivity increases with the increase of both concentration ions, however, in a different manner. While the conductivity of niobium doped ceramics increases with the power of 1.6 for the entire range of concentrations studied (0.01-0.7 mol%), the conductivity of antimony doped ceramics increases with the power of 1.9 in the range 0.01-0.05 mol% of Sb; 3.7 in the range 0.05-0.30 mol% and 1.8 in the range 0.30-0.70 mol%. This behavior is attributed to the existence of two stable oxidation states for antimony: Sb3+ and Sb5+, while for niobium there is only one: Nb5+. The power of 3.7 for Sb would be related to the segregation of this ion on the grain boundary accompanied by an additional contribution coming from the substitution of Sn2+ by Sb3+ on the grain surface.

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Photoconductivity of SnO2 sol-gel films is excited, at low temperature, by using a 266 nm line-fourth harmonic-of a Nd:YAG laser. This line has above bandgap energy and promotes generation of electron-hole pairs, which recombines with oxygen adsorbed at grain boundary. The conductivity increases up to 40 times. After removing the illumination on an undoped SnO2 film, the conductivity remains unchanged, as long as the temperature is kept constant. Adsorbed oxygen ions recombine with photogenerated holes and are continuously evacuated from the system, leaving a net concentration of free electrons into the material, responsible for the increase in the conductivity. For Er doped SnO2, the excitation of conductivity by the laser line has similar behavior, however after removing illumination, the conductivity decreases with exponential-like decay. (C) 2003 Elsevier Ltd. All rights reserved.

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In this work, indium tin oxide (ITO) films were prepared using a wet chemical route, the Pechini method. This consists of a polyesterification reaction between an alpha-hydroxicarboxylate complex (indium citrate and tin citrate) with a polyalcohol (ethylene glycol) followed by a post annealing at 500 degrees C. A 10 at.% of doping of Sn4+ ions into an In2O3 matrix was successfully achieved through this method. In order to characterize the structure, the morphology as well as the optical and electrical properties of the produced ITO films, they were analyzed using different experimental techniques. The obtained films are highly transparent, exhibiting transmittance of about 85% at 550 nm. They are crystalline with a preferred orientation of [222]. Microscopy discloses that the films are composed of grains of 30 nm average size and 0.63 nm RMS roughness. The films' measured resistivity, mobility and charge carrier concentration were 5.8 x 10(-3) Omega cm, 2.9 cm(2)/V s and -3.5 x 10(20)/cm(3), respectively. While the low mobility value can be related to the small grain size, the charge carrier concentration value can be explained in terms of the high oxygen concentration level resulting from the thermal treatment process performed in air. The experimental conditions are being refined to improve the electrical characteristics of the films while good optical, chemical, structural and morphological qualities already achieved are maintained. (C) 2007 Elsevier B.V. All rights reserved.