Experimental model of tooth movement in mice: A standardized protocol for studying bone remodeling under compression and tensile strains

During orthodontic tooth movement (OTM), alveolar bone is resorbed by osteoclasts in compression sites (CS) and is deposited by osteoblasts in tension sites (TS). The aim of this study was to develop a standardized OTM protocol in mice and to investigate the expression of bone resorption and deposition markers in CS and TS. An orthodontic appliance was placed in C57BL6/J mice. To define the ideal orthodontic force, the molars of the mice were subjected to forces of 0.1 N, 0.25 N, 0.35 N and 0.5 N. The expression of mediators that are involved in bone remodeling at CS and TS was analyzed using a Real-Time PCR. The data revealed that a force of 0.35 N promoted optimal OTM and osteoclast recruitment without root resorption. The levels of TNF-alpha, RANKL, MMP13 and OPG were all altered in CS and TS. Whereas TNF-a and Cathepsin K exhibited elevated levels in CS. RUNX2 and OCN levels were higher in TS. Our results suggest that 0.35 N is the ideal force for OTM in mice and has no side effects. Moreover, the expression of bone remodeling markers differed between the compression and the tension areas, potentially explaining the distinct cellular migration and differentiation patterns in each of these sites. (C) 2012 Elsevier Ltd. All rights reserved.

Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition

Strains in cubic GaN films grown on GaAs (001) were measured by a triple-axis x-ray diffraction method. Residual strains in the as-grown epitaxial films were in compression, contrary to the predicted tensile strains caused by large lattice mismatch between epilayers and GaAs substrates (20%). It was also found that the relief of strains in the GaN films has a complicated dependence on the growth conditions. We interpreted this as the interaction between the lattice mismatch and thermal mismatch stresses. The fully relaxed lattice constants of cubic GaN are determined to be 4.5038 +/- 0.0009 Angstrom, which is in excellent agreement with the theoretical prediction of 4.503 Angstrom. (C) 2000 American Institute of Physics. [S0021-8979(00)07918-4].

Field performance of in-service cast iron water reticulation pipe buried in reactive clay

Field monitoring is an important means for understanding soil behaviour and its interaction with buried structures such as pipeline. This paper details the successful instrumentation of a section of an in-service cast iron water main buried in an area of reactive clay where frequent water pipe breakage has been observed. The instrumentation included measurement of pipe strain; pipe water pressure and temperature; soil pressure, temperature, moisture content and matric suction, as well as the meteorological conditions on site. The data generally indicated that changes in soil temperature, suction and moisture content were directly related to the local climatic variations. The suction and moisture content data indicated that the soil profile at the site down to around 700 mm, and probably down to 1000 mm, is affected by changes in surface weather, while soil conditions below this depth appear to be more stable. Analysis of pipe strain indicated that the pipe behaves like a cantilever beam, with the top experiencing predominantly tensile strains during summer. Subsequently, these trends reduce to compressive strains as soil swelling occurs due to increase of moisture content with the onset of winter.

Influence of Anisotropy on Pavement Responses Using Adaptive Sparse Polynomial Chaos Expansion

Modeling the spatial variability that exists in pavement systems can be conveniently represented by means of random fields; in this study, a probabilistic analysis that considers the spatial variability, including the anisotropic nature of the pavement layer properties, is presented. The integration of the spatially varying log-normal random fields into a linear-elastic finite difference analysis has been achieved through the expansion optimal linear estimation method. For the estimation of the critical pavement responses, metamodels based on polynomial chaos expansion (PCE) are developed to replace the computationally expensive finite-difference model. The sparse polynomial chaos expansion based on an adaptive regression-based algorithm, and enhanced by the combined use of the global sensitivity analysis (GSA) is used, with significant savings in computational effort. The effect of anisotropy in each layer on the pavement responses was studied separately, and an effort is made to identify the pavement layer wherein the introduction of anisotropic characteristics results in the most significant impact on the critical strains. It is observed that the anisotropy in the base layer has a significant but diverse effect on both critical strains. While the compressive strain tends to be considerably higher than that observed for the isotropic section, the tensile strains show a decrease in the mean value with the introduction of base-layer anisotropy. Furthermore, asphalt-layer anisotropy also tends to decrease the critical tensile strain while having little effect on the critical compressive strain. (C) 2015 American Society of Civil Engineers.

The response of buildings to movements induced by deep excavations

Deep excavations and tunnelling can cause ground movements that affect buildings within their influence zone. The current approach for building damage assessment is based on tensile strains estimated from the deflection ratio and the horizontal strains at the building foundation. For tunnelling-induced deformations, Potts & Addenbrooke (1997) suggested a method to estimate the building response from greenfield conditions using the relative building stiffness. However, there is not much guidance for building response to excavation-induced movements. This paper presents a numerical study on the response of buildings to movements caused by deep excavations in soft clays, and proposes design guidance to estimate the deflection ratio and the horizontal strains of the building from the building stiffness. © 2012 Taylor & Francis Group.

The horizontal response of framed buildings on individual footings to excavation-induced movements

Deep excavations and tunnelling can cause ground movements that affect buildings within their influence zone. The current approach for building damage assessment is based on tensile strains estimated from the deflection ratio and the horizontal strains at the building foundation. This paper examines the significance of horizontal strains in buildings on individual footings. The first part of the paper presents a case study of a framed building in Singapore which was subjected to the effects of bored tunnelling, where significant horizontal strains were observed. The second part of the paper suggests a method to relate the horizontal strains induced in a building to the stiffness of the frame structure. Using a combination of simplified structural analysis and finite element models, design guidance is proposed to estimate excavation-induced horizontal strains in frame buildings on individual footings. © 2012 Taylor & Francis Group.

Building damage assessment for deep excavations in Singapore and the influence of building stiffness

One of the biggest issues for underground construction in a densely built-up urban environment is the potentially adverse impact on buildings adjacent to deep excavations. In Singapore, a building damage assessment is usually carried out using a three-staged approach to assess the risk of damage caused by major underground construction projects. However, the tensile strains used for assessing the risk of building damage are often derived using deflection ratios and horizontal strains under 'greenfield' conditions. This ignores the effects of building stiffness and in many cases may be conservative. This paper presents some findings from a study on the response of buildings to deep excavations. Firstly, the paper discusses the settlement response of an actual building - the Singapore Art Museum - adjacent to a deep excavation. By comparing the monitored building settlement with the adjacent ground settlement markers, the influence of building stiffness in modifying the response to excavation-induced settlements is observed. Using the finite element method, a numerical study on the building response to movements induced by deep excavations found a consistent relationship between the building modification factor and a newly defined relative bending stiffness of the building. This relationship can be used as a design guidance to estimate the deflection ratio in a building from the greenfield condition. By comparing the case study results with the design guidance developed from finite element analysis, this paper presents some important characteristics of the influence of building stiffness on building damages for deep excavations.

Assessment of the settlement vulnerability of masonry buildings

Excavation works in urban areas require a preliminary risk damage assessment. In historical cities, the prediction of building response to settlements is necessary to reduce the risk of damage of the architectural heritage. The current method used to predict the building damage due to ground deformations is the Limiting Tensile Strain Method (LTSM). In this approach the building is modelled as an elastic beam subjected to imposed Greenfield settlements and the induced tensile strains are compared with a limit value for the material. These assumptions can lead to a non realistic evaluation of the damage. In this paper, the possibility to apply a settlement risk assessment derived from the seismic vulnerability approach is considered. The parameters that influence the structural response to settlements can be defined through numerical analyses which take into account the nonlinear behaviour of masonry and the soil-structure interaction. The effects of factors like material quality, geometry of the structure, amount of openings, type of foundation or the actual state of preservation can be included in a global vulnerability index, which should indicate the building susceptibility to damage by differential settlements of a given magnitude. Vulnerability curves will represent the expected damage of each vulnerability class of building as a function of the settlement.

Computational modelling of building damage due to tunnelling

Underground constructions in soft ground may lead to settlement damage to existing buildings. In The Netherlands the situation is particularly complex, because of the combination of soft soil, fragile pile foundations and brittle, unreinforced masonry façades. The tunnelling design process in urban areas requires a reliable risk damage assessment. In the engineering practice the current preliminary damage assessment is based on the limiting tensile strain method (LTSM). Essentially this is an uncoupled analysis, in which the building is modelled as an elastic beam subject to imposed Greenfield settlements and the induced tensile strains are compared with a limit value for the material. The soil-structure interaction is included only as a ratio between the soil and the building stiffness. In this paper, a coupled approach is evaluated. The soil-structure interaction in terms of normal and shear behaviour is represented by interface elements and a cracking model for masonry is included. This project aims to improve the existing damage classification system for masonry buildings subjected to tunnel-induced settlement, in order to evaluate the necessity of strengthening techniques or mitigation measures.

Coupled analysis of building damage due to tunnelling

Excavation works in urban areas require a preliminary risk damage assessment. In historical cities, the prediction of building response to settlements is necessary to reduce the risk of damage of the architectural heritage. The current method used to predict the building damage due to ground deformations is the Limiting Tensile Strain Method (LTSM). This method is based on an uncoupled soil-structure analysis, in which the building is modelled as an elastic beam subject to imposed greenfield settlements and the induced tensile strains are compared with a limit value for the material. This approach neglects many factors which play an important rule in the response of the structure to tunneling induced settlements. In this paper, the possibility to apply a settlement risk assessment derived from the seismic vulnerability approach is considered. The parameters that influence the structural response to settlements can be defined through numerical coupled analyses which take into account the nonlinear behaviour of masonry and the soil-structure interaction.

Quasi-3D Cytoskeletal Dynamics of Osteocytes under Fluid Flow

Osteocytes respond to dynamic fluid shear loading by activating various biochemical pathways, mediating a dynamic process of bone formation and resorption. Whole-cell deformation and regional deformation of the cytoskeleton may be able to directly regulate this process. Attempts to image cellular deformation by conventional microscopy techniques have been hindered by low temporal or spatial resolution. In this study, we developed a quasi-three-dimensional microscopy technique that enabled us to simultaneously visualize an osteocyte's traditional bottom-view profile and a side-view profile at high temporal resolution. Quantitative analysis of the plasma membrane and either the intracellular actin or microtubule (MT) cytoskeletal networks provided characterization of their deformations over time. Although no volumetric dilatation of the whole cell was observed under flow, both the actin and MT networks experienced primarily tensile strains in all measured strain components. Regional heterogeneity in the strain field of normal strains was observed in the actin networks, especially in the leading edge to flow, but not in the MT networks. In contrast, side-view shear strains exhibited similar subcellular distribution patterns in both networks. Disruption of MT networks caused actin normal strains to decrease, whereas actin disruption had little effect on the MT network strains, highlighting the networks' mechanical interactions in osteocytes.

Dielectric investigations in Sr0.75Ba0.25Nb2O6 relaxor ferroelectric thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Análise através do método dos elementos finitos das tensões desenvolvidas no reborbo alveolar sob as próteses totais com três diferentes conceitos oclusais

Pós-graduação em Reabilitação Oral - FOAR

One-dimensional silicon and germanium nanostructures with no carbon analogues

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Design and Simulation of Deep Nanometer SRAM Cells under Energy, Mismatch, and Radiation Constraints

La fiabilidad está pasando a ser el principal problema de los circuitos integrados según la tecnología desciende por debajo de los 22nm. Pequeñas imperfecciones en la fabricación de los dispositivos dan lugar ahora a importantes diferencias aleatorias en sus características eléctricas, que han de ser tenidas en cuenta durante la fase de diseño. Los nuevos procesos y materiales requeridos para la fabricación de dispositivos de dimensiones tan reducidas están dando lugar a diferentes efectos que resultan finalmente en un incremento del consumo estático, o una mayor vulnerabilidad frente a radiación. Las memorias SRAM son ya la parte más vulnerable de un sistema electrónico, no solo por representar más de la mitad del área de los SoCs y microprocesadores actuales, sino también porque las variaciones de proceso les afectan de forma crítica, donde el fallo de una única célula afecta a la memoria entera. Esta tesis aborda los diferentes retos que presenta el diseño de memorias SRAM en las tecnologías más pequeñas. En un escenario de aumento de la variabilidad, se consideran problemas como el consumo de energía, el diseño teniendo en cuenta efectos de la tecnología a bajo nivel o el endurecimiento frente a radiación. En primer lugar, dado el aumento de la variabilidad de los dispositivos pertenecientes a los nodos tecnológicos más pequeños, así como a la aparición de nuevas fuentes de variabilidad por la inclusión de nuevos dispositivos y la reducción de sus dimensiones, la precisión del modelado de dicha variabilidad es crucial. Se propone en la tesis extender el método de inyectores, que modela la variabilidad a nivel de circuito, abstrayendo sus causas físicas, añadiendo dos nuevas fuentes para modelar la pendiente sub-umbral y el DIBL, de creciente importancia en la tecnología FinFET. Los dos nuevos inyectores propuestos incrementan la exactitud de figuras de mérito a diferentes niveles de abstracción del diseño electrónico: a nivel de transistor, de puerta y de circuito. El error cuadrático medio al simular métricas de estabilidad y prestaciones de células SRAM se reduce un mínimo de 1,5 veces y hasta un máximo de 7,5 a la vez que la estimación de la probabilidad de fallo se mejora en varios ordenes de magnitud. El diseño para bajo consumo es una de las principales aplicaciones actuales dada la creciente importancia de los dispositivos móviles dependientes de baterías. Es igualmente necesario debido a las importantes densidades de potencia en los sistemas actuales, con el fin de reducir su disipación térmica y sus consecuencias en cuanto al envejecimiento. El método tradicional de reducir la tensión de alimentación para reducir el consumo es problemático en el caso de las memorias SRAM dado el creciente impacto de la variabilidad a bajas tensiones. Se propone el diseño de una célula que usa valores negativos en la bit-line para reducir los fallos de escritura según se reduce la tensión de alimentación principal. A pesar de usar una segunda fuente de alimentación para la tensión negativa en la bit-line, el diseño propuesto consigue reducir el consumo hasta en un 20 % comparado con una célula convencional. Una nueva métrica, el hold trip point se ha propuesto para prevenir nuevos tipos de fallo debidos al uso de tensiones negativas, así como un método alternativo para estimar la velocidad de lectura, reduciendo el número de simulaciones necesarias. Según continúa la reducción del tamaño de los dispositivos electrónicos, se incluyen nuevos mecanismos que permiten facilitar el proceso de fabricación, o alcanzar las prestaciones requeridas para cada nueva generación tecnológica. Se puede citar como ejemplo el estrés compresivo o extensivo aplicado a los fins en tecnologías FinFET, que altera la movilidad de los transistores fabricados a partir de dichos fins. Los efectos de estos mecanismos dependen mucho del layout, la posición de unos transistores afecta a los transistores colindantes y pudiendo ser el efecto diferente en diferentes tipos de transistores. Se propone el uso de una célula SRAM complementaria que utiliza dispositivos pMOS en los transistores de paso, así reduciendo la longitud de los fins de los transistores nMOS y alargando los de los pMOS, extendiéndolos a las células vecinas y hasta los límites de la matriz de células. Considerando los efectos del STI y estresores de SiGe, el diseño propuesto mejora los dos tipos de transistores, mejorando las prestaciones de la célula SRAM complementaria en más de un 10% para una misma probabilidad de fallo y un mismo consumo estático, sin que se requiera aumentar el área. Finalmente, la radiación ha sido un problema recurrente en la electrónica para aplicaciones espaciales, pero la reducción de las corrientes y tensiones de los dispositivos actuales los está volviendo vulnerables al ruido generado por radiación, incluso a nivel de suelo. Pese a que tecnologías como SOI o FinFET reducen la cantidad de energía colectada por el circuito durante el impacto de una partícula, las importantes variaciones de proceso en los nodos más pequeños va a afectar su inmunidad frente a la radiación. Se demuestra que los errores inducidos por radiación pueden aumentar hasta en un 40 % en el nodo de 7nm cuando se consideran las variaciones de proceso, comparado con el caso nominal. Este incremento es de una magnitud mayor que la mejora obtenida mediante el diseño de células de memoria específicamente endurecidas frente a radiación, sugiriendo que la reducción de la variabilidad representaría una mayor mejora. ABSTRACT Reliability is becoming the main concern on integrated circuit as the technology goes beyond 22nm. Small imperfections in the device manufacturing result now in important random differences of the devices at electrical level which must be dealt with during the design. New processes and materials, required to allow the fabrication of the extremely short devices, are making new effects appear resulting ultimately on increased static power consumption, or higher vulnerability to radiation SRAMs have become the most vulnerable part of electronic systems, not only they account for more than half of the chip area of nowadays SoCs and microprocessors, but they are critical as soon as different variation sources are regarded, with failures in a single cell making the whole memory fail. This thesis addresses the different challenges that SRAM design has in the smallest technologies. In a common scenario of increasing variability, issues like energy consumption, design aware of the technology and radiation hardening are considered. First, given the increasing magnitude of device variability in the smallest nodes, as well as new sources of variability appearing as a consequence of new devices and shortened lengths, an accurate modeling of the variability is crucial. We propose to extend the injectors method that models variability at circuit level, abstracting its physical sources, to better model sub-threshold slope and drain induced barrier lowering that are gaining importance in FinFET technology. The two new proposed injectors bring an increased accuracy of figures of merit at different abstraction levels of electronic design, at transistor, gate and circuit levels. The mean square error estimating performance and stability metrics of SRAM cells is reduced by at least 1.5 and up to 7.5 while the yield estimation is improved by orders of magnitude. Low power design is a major constraint given the high-growing market of mobile devices that run on battery. It is also relevant because of the increased power densities of nowadays systems, in order to reduce the thermal dissipation and its impact on aging. The traditional approach of reducing the voltage to lower the energy consumption if challenging in the case of SRAMs given the increased impact of process variations at low voltage supplies. We propose a cell design that makes use of negative bit-line write-assist to overcome write failures as the main supply voltage is lowered. Despite using a second power source for the negative bit-line, the design achieves an energy reduction up to 20% compared to a conventional cell. A new metric, the hold trip point has been introduced to deal with new sources of failures to cells using a negative bit-line voltage, as well as an alternative method to estimate cell speed, requiring less simulations. With the continuous reduction of device sizes, new mechanisms need to be included to ease the fabrication process and to meet the performance targets of the successive nodes. As example we can consider the compressive or tensile strains included in FinFET technology, that alter the mobility of the transistors made out of the concerned fins. The effects of these mechanisms are very dependent on the layout, with transistor being affected by their neighbors, and different types of transistors being affected in a different way. We propose to use complementary SRAM cells with pMOS pass-gates in order to reduce the fin length of nMOS devices and achieve long uncut fins for the pMOS devices when the cell is included in its corresponding array. Once Shallow Trench isolation and SiGe stressors are considered the proposed design improves both kinds of transistor, boosting the performance of complementary SRAM cells by more than 10% for a same failure probability and static power consumption, with no area overhead. While radiation has been a traditional concern in space electronics, the small currents and voltages used in the latest nodes are making them more vulnerable to radiation-induced transient noise, even at ground level. Even if SOI or FinFET technologies reduce the amount of energy transferred from the striking particle to the circuit, the important process variation that the smallest nodes will present will affect their radiation hardening capabilities. We demonstrate that process variations can increase the radiation-induced error rate by up to 40% in the 7nm node compared to the nominal case. This increase is higher than the improvement achieved by radiation-hardened cells suggesting that the reduction of process variations would bring a higher improvement.