The harmonic torsional oscillations of a thin disk submerged in a fluid with a surfactant surface layer

A formulation in terms of a Fredholm integral equation of the first kind is given for the axisymmetric problem of a disk oscillating harmonically in a viscous fluid whose surface is contaminated with a surfactant film. The equation of the first kind is converted to a pair of coupled integral equations of the second kind, which are solved numerically. The resistive torque on the disk is evaluated and surface velocity profiles are computed for varying values of the ratio of the coefficient of surface shear viscosity to the coefficient of viscosity of the substrate fluid, and the depth of the disk below the surface.

Microscopic modelling of adsorption and the generalised surface layer hypothesis

Two- and three-state models for the adsorption of organic compounds at the electrodelelectrolyte interface are proposed. Different size requirements, if any, for the neutral molecule and the adsorbing solvent are also considered. It is shown how the empirical, generalised surface layer (GSL) relationship (between the potential difference and the electrode charge) formulated by Damaskin et a / . can be understood at the molecular level.

Influence of sintering conditions and doping on the dielectric relaxation originating from the surface layer effects in CaCu3Ti4O12 ceramics

Detailed investigations into the dielectric dispersion phenomenon in the giant dielectric constant material CaCu3Ti4O12 (CCTO) around room temperature revealed the existence of two successive dielectric relaxations. In the temperature domain, a new dielectric relaxation was clearly observed around 250K, in addition to the well-investigated dielectric relaxation close to 100K. The effect of sintering and doping (La3+) on the strength of these dielectric relaxations were studied in detail. The sintering temperature as well as its duration was found to have tremendous influence on the dielectric relaxation that was encountered around 250 K. This Maxwell-Wagner (M-W) type of relaxation was found to be originating from the surface layer containing the Cu-rich phase, which was ascribed to the difference in the oxygen content between the surface and the interior of the sample. Interestingly, this particular additional relaxation was not observed in La2/3Cu3Ti4O12, a low dielectric constant member of the CCTO family, in which the segregation of Cu-rich phase on the surface was absent. Indeed the correlation between the new relaxation and the presence of Cu-rich phase in CCTO ceramics was further corroborated by the absence of the same after removing the top and bottom layers. (C) 2007 Elsevier Ltd. All rights reserved.

A note on the slow rotation of a disc in a bounded fluid with a surfactant surface layer

A method involving eigenfunction expansion and collocation is employed to solve the axisymmetric problem of a slowly and steadily rotating circular disc in a fluid of finite extent whose surface is covered with a surfactant film. The present method (originally described by Wang (Acta Mech. 94, 97, 1992)) is observed to produce results of practical importance associated with the problem more quickly and more easily than the one used earlier by Shail and Gooden (Int. J. Multiphase Flow 7, 245, 1992). (C) 1994 Academic Press, Inc.

Microscopic modelling of adsorption and the generalised surface layer hypothesis

Two- and three-state models for the adsorption of organic compounds at the electrode/electrolyte interface are proposed. Different size requirements, if any, for the neutral molecule and the adsorbing solvent are also considered. It is shown how the empirical, generalised surface layer (GSL) relationship (between the potential difference and the electrode charge) formulated by Damaskin et al. can be understood at the molecular level.

Microstructure and Evolution of Mechanically-Induced Ultrafine Grain in Surface Layer of Al-Alloy Subjected to USSP

Experiments were conducted to investigate the ultrafine-grained (UFG) microstructures in the surface layer of an aluminum alloy 7075 heavily worked by ultrasonic shot peening. Conventional and high-resolution electron microscopy was performed at various depths of the deformed layer. Results showed that UFG structures were introdued into the surface layer of 62 μm thick. With increasing strain, the various microstructural features, e.g., the dislocation emission source, elongated microbands, dislocation cells, dislocation cell blocks, equiaxed submicro-, and nano-crystal grains etc., were successively produced. The grain subdivision into the subgrains was found to be the main mechanism responsible for grain refinement. The simultaneous evolution of high boundary misorientations was ascribed to the subgrain boundary rotation for accommodating further strains. Formed microstructures were highly nonequilibratory.  2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

Study on Mechanical Properties of Nanocrystal Surface Layer of an Aluminum Alloy

The nanocrystal surface layer of an aluminum alloy induced by High Speed Shot Peening (HSSP) was investigated in this paper. The results of nanoindentation experiment show that the elastic modulus and the hardness of nanocrystal surface layer increased,by 8% and 20%, respectively. The elastic modulus and the hardness appear to be independent of the distance from nanocrystalized surface and the process time.

Water Content Distribution in the Surface Layer of Maoping Slope

The water content distribution in the surface layer of Maoping slope has been studied by testing the water content at 31 control sites. The water content profiles at these sites have also been determined. The water content distributions at different segments have been obtained by using the Kriging method of geostatistics. By comparing the water content distributions with the landform of the slope, it was shown that the water content is closely dependent on the landform of the slope. The water content distribution in the surface layer provided a fundamental basis for landslide predication and treatment.

Thermodynamic model of hydrogen-induced silicon surface layer cleavage

A thermodynamic model of hydrogen-induced silicon surface layer splitting with the help of a bonded silicon wafer is proposed in this article. Wafer splitting is the result of lateral growth of hydrogen blisters in the entire hydrogen-implanted region during annealing. The blister growth rate depends on the effective activation energies of both hydrogen complex dissociation and hydrogen diffusion. The hydrogen blister radius was studied as a function of annealing time, annealing temperature, and implantation dose. The critical radius was obtained according to the Griffith energy condition. The time required for wafer splitting at the cut temperature was calculated in accordance with the growth of hydrogen blisters. (C) 2001 American Institute of Physics.

NEW TYPE OF SILICON MATERIAL WITH VERY HIGH-QUALITY SURFACE-LAYER ON INSULATING DEFECT LAYER

A new-type silicon material, silicon on defect layer (SODL) was proved to have a very high quality surface microstructure which is necessary for commercially feasible high-density very large scale integrated circuits (VLSI). The structure of the SODL material was viewed by transmission electron microscopy. The SODL material was also proved to have a buried defect layer with an insulating resistivity of 5.7 x 10(10) OMEGA-cm.

Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting

A thermodynamic model of the evolution of microcracks in silicon caused by helium and hydrogen co-implantation during annealing was studied. The crack growth rate relies on the amount of helium atoms and hydrogen molecules present. Here, the crack radius was studied as a function of annealing time and temperature, and compared with experimental results. The mean crack radius was found to be proportional to the annealing temperature and the helium and hydrogen implanted fluence. The gas desorption should be considered during annealing process. (C) 2009 Elsevier B.V. All rights reserved.

Modeling vertical heat transport in the wave affected surface layer of the ocean

In considering the vertical heat transport problems in the upper ocean, the flat upper boundary approximation for the free surface and the horizontal homogenous hypothesis are usually applied. However, due to the existence of the wave motion, the application of this approximation may result in some errors to the solar irradiation since it decays quickly in respect to the actual thickness of the water layer below the surface; on the other hand, due to the fluctuation of the water layer depth, it is improper to neglect the effects of the horizontal advection and turbulent diffusion since they also contribute to the vertical heat transport. A new model is constructed in this study to reflect these effects. The corresponding numerical simulations show that the wave motion may remarkably accelerate the vertical heat transferring process and the variation of the temperature in the wave affected layer appears in an oscillating manner.

Physical mechanism and numerical simulations of surface layer temperature inversion in tropical ocean

The one-dimensional Kraus-Turner mixed layer model improved by Liu is developed to consider the effect of salinity and the equations of temperature and salinity under the mixed layer. On this basis, the processes of growth and death of surface layer temperature inversion is numerically simulated under different environmental parameters. At the same time, the physical mechanism is preliminarily discussed combining the observations at the station of TOGA-COARE 0 degrees N, 156 degrees E. The results indicate that temperature inversion sensitively depends on the mixed layer depth, sea surface wind speed and solar shortwave radiation, etc., and appropriately meteorological and hydrological conditions often lead to the similarly periodical occurrence of this inversion phenomenon.

Detecting a shallow surface layer in Barkley Sound from Lagrangian drifter trajectories

Senior thesis written for Oceanography 444