Neutron-neutron scattering parameters from the ^3He(d,t)2p and ^3H(d,^3He)2n reactions

The energy spectra of tritons and Helium-3 nuclei from the reactions ³He(d,t)2p, ³H(d,³He)2n, ³He(d,³He)pn, and ³H(d,t)pn were measured between 6° and 20° at a bombarding energy of 10.9 MeV. An upper limit of 5 μb/sr. was obtained for producing a bound di-neutron at 6° and 7.5°. The ³He(d,t)2p and ³H(d,³He)2n data, together with previous measurements at higher energies, have been used to investigate whether one can unambiguously extract information on the two-nucleon system from these three-body final state reactions. As an aid to these theoretical investigations, Born approximation calculations were made employing realistic nucleon-nucleon potentials and an antisymmetrized final state wave function for the five-particle system. These calculations reproduce many of the features observed in the experimental data and indicate that the role of exchange processes cannot be ignored. The results show that previous attempts to obtain information on the neutron-neutron scattering length from the ³H(d,³He)2n reaction may have seriously overestimated the precision that could be attained.

Subtraction of scattering parameters for adiabatic intrinsic responses of semiconductor lasers

Thermal effects will make chip temperature change with bias current of semiconductor lasers, which results in inaccurate intrinsic response by the conventional subtraction method. In this article, an extended subtraction method of scattering parameters for characterizing adiabatic responses of laser diode is proposed. The pulsed injection operation is used to determine the chip temperature of packaged semiconductor laser, and an optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. In this case, the scattering parameters of laser diode are measured on adiabatic condition and the adiabatic intrinsic responses of packaged laser diode are first extracted. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis results indicate that inclusion of thermal. effects is necessary to acquire accurate intrinsic responses of semiconductor lasers. (C) 2008 Wiley Periodicals, Inc.

Characterization of parasitics from scattering parameters of laser diode

A novel method for characterizing the parasitics of parasitic network is proposed based on the relations between the scattering parameters of a semiconductor laser chip and laser diode. Experiments are designed and performed using our method. The analysis results are in good agreement with the measurements. Furthermore, how the parasitics change with the parasitic element values are investigated. The method only needs reflection coefficient of laser diode to be measured, which is simple because of the developed electrical-domain measurement techniques. 2007 Wiley Periodicals, Inc.

Subtraction of scattering parameters for small-signal modulation characteristics of laser diode

An extended subtraction method of scattering parameters for characterizing laser diode is proposed in this paper. The intrinsic response is extracted from the measured transmission coefficients of laser diode, and the parasitics of packaging net-work laser chip are determined from the measured reflection coefficient of laser diode simultaneously. It is shown that the theories agree well with the experimental results.

Negative second virial coefficients as predictors of protein crystal growth: Evidence from sedimentation equilibrium studies that refutes the designation of those light scattering parameters as osmotic virial coefficients

The effects of ammonium sulphate concentration on the osmotic second virial coefficient (B-AA/M-A) for equine serum albumin (pH 5.6, 20 degrees C) have been examined by sedimentation equilibrium. After an initial steep decrease with increasing ammonium sulphate concentration, B-AA/M-A assumes an essentially concentration-independent magnitude of 8-9 ml/g. Such behaviour conforms with the statistical-mechanical prediction that a sufficient increase in ionic strength should effectively eliminate the contributions of charge interactions to B-AA/M-A but have no effect on the covolume contribution (8.4 ml/g for serum albumin). A similar situation is shown to apply to published sedimentation equilibrium data for lysozyme (pH 4.5). Although termed osmotic second virial coefficients and designated as such (B-22), the negative values obtained in published light scattering studies of both systems have been described incorrectly because of the concomitant inclusion of the protein-salt contribution to thermodynamic nonideality of the protein. Those negative values are still valid predictors of conditions conducive to crystal growth inasmuch as they do reflect situations in which there is net attraction between protein molecules. However, the source of attraction responsible for the negative virial coefficient stems from the protein-salt rather than the protein-protein contribution, which is necessarily positive. (c) 2005 Elsevier B.V. All rights reserved.

Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V

An extended subtraction method of scattering parameters for characterizing laser diode is introduced in this paper. The intrinsic small-signal response can be directly extracted from the measured transmission coefficients of laser diode by the method. However the chip temperature may change with the injection bias current due to thermal effects, which causes inaccurate intrinsic response by our method. Therefore, how to determine the chip temperature and keep the laser chip adiabatic is very critical when extracting the intrinsic response. To tackle these problems, the dependence of the lasing wavelength of the laser diode on the chip temperature is investigated, and an applicable measurement setup which keeps the chip temperature stable is presented. The scattering parameters of laser diode are measured on diabatic and adiabatic conditions, and the extracted intrinsic responses for both conditions are compared. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis indicates that inclusion of thermal effects is necessary to acquire accurate intrinsic response.

Canonical quantum potential scattering theory

A new formulation of potential scattering in quantum mechanics is developed using a close structural analogy between partial waves and the classical dynamics of many non-interacting fields. Using a canonical formalism we find nonlinear first-order differential equations for the low-energy scattering parameters such as scattering length and effective range. They significantly simplify typical calculations, as we illustrate for atom-atom and neutron-nucleus scattering systems. A generalization to charged particle scattering is also possible.

The effect of core electrons in e(+)-Na scattering

The scattering of positrons off sodium targets has been investigated using the coupled static model. The sodium atom is represented by the one-active-electron model in which all the electrons of the target have been considered explicitly and the loosely bound valence electron is only involved in transitions. The scattering parameters are presented at low and medium energies. Appreciable differences are noticed between the present results and those obtained by the one-electron model with and without the core potential.

First principles calculation of electron-phonon and alloy scattering in strained SiGe

First-principles electronic structure methods are used to predict the mobility of n-type carrier scattering in strained SiGe. We consider the effects of strain on the electron-phonon deformation potentials and the alloy scattering parameters. We calculate the electron-phonon matrix elements and fit them up to second order in strain. We find, as expected, that the main effect of strain on mobility comes from the breaking of the degeneracy of the six Δ and L valleys, and the choice of transport direction. The non-linear effects on the electron-phonon coupling of the Δ valley due to shear strain are found to reduce the mobility of Si-like SiGe by 50% per % strain. We find increases in mobility between 2 and 11 times that of unstrained SiGe for certain fixed Ge compositions, which should enhance the thermoelectric figure of merit in the same order, and could be important for piezoresistive applications.

First-principles calculation of carrier-phonon scattering in n-type Si1−xGex alloys

First-principles electronic structure methods are used to find the rates of inelastic intravalley and intervalley n-type carrier scattering in Si1-xGex alloys. Scattering parameters for all relevant Delta and L intra- and intervalley scattering are calculated. The short-wavelength acoustic and the optical phonon modes in the alloy are computed using the random mass approximation, with interatomic forces calculated in the virtual crystal approximation using density functional perturbation theory. Optical phonon and intervalley scattering matrix elements are calculated from these modes of the disordered alloy. It is found that alloy disorder has only a small effect on the overall inelastic intervalley scattering rate at room temperature. Intravalley acoustic scattering rates are calculated within the deformation potential approximation. The acoustic deformation potentials are found directly and the range of validity of the deformation potential approximation verified in long-wavelength frozen phonon calculations. Details of the calculation of elastic alloy scattering rates presented in an earlier paper are also given. Elastic alloy disorder scattering is found to dominate over inelastic scattering, except for almost pure silicon (x approximate to 0) or almost pure germanium (x approximate to 1), where acoustic phonon scattering is predominant. The n-type carrier mobility, calculated from the total (elastic plus inelastic) scattering rate, using the Boltzmann transport equation in the relaxation time approximation, is in excellent agreement with experiments on bulk, unstrained alloys..

First-principles calculation of alloy scattering in GexSi1-x

First-principles electronic structure methods are used to find the rates of intravalley and intervalley n-type carrier scattering due to alloy disorder in Si1-xGex alloys. The required alloy scattering matrix elements are calculated from the energy splitting of nearly degenerate Bloch states which arises when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Scattering parameters for all relevant Delta and L intravalley and intervalley alloy scattering are calculated. Atomic relaxation is found to have a substantial effect on the scattering parameters. f-type intervalley scattering between Delta valleys is found to be comparable to other scattering channels. The n-type carrier mobility, calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation, is in excellent agreement with experiments on bulk, unstrained alloys.

New physical insights into the electromagnetic shielding efficiency in PVDF nanocomposites containing multiwall carbon nanotubes and magnetic nanoparticles

This work attempts to bring critical insights into the electromagnetic shielding efficiency in polymeric nanocomposites with respect to the particle size of magnetic nanoparticles added along with or without a conductive inclusion. To gain insight, various Ni-Fe (NixFe1-x; x = 10, 20, 40; Ni: nickel, Fe: iron) alloys were prepared by a vacuum arc melting process and different particle sizes were then achieved by a controlled grinding process for different time scales. Poly(vinylidene fluoride), PVDF based composites involving different particle sizes of the Ni-Fe alloy were prepared with or without multiwall carbon nanotubes (MWNTs) by a wet grinding approach. The Ni-Fe particles were thoroughly characterized with respect to their microstructure and magnetization; and the electromagnetic (EM) shielding efficiency (SE) of the resulting composites was obtained from the scattering parameters using a vector network analyzer in a broad range of frequencies. The saturation magnetization of Ni-Fe nanoparticles and the bulk electrical conductivity of PVDF/Ni-Fe composites scaled with increasing particle size of NiFe. Interestingly, the PVDF/Ni-Fe/MWNT composites showed a different trend where the bulk electrical conductivity and SE scaled with decreasing particle size of the Ni-Fe alloy. A total SE of similar to 35 dB was achieved with 50 wt% of Ni60Fe40 and 3 wt% MWNTs. More interestingly, the PVDF/Ni-Fe composites shielded the EM waves mostly by reflection whereas, the PVDF/Ni-Fe/MWNT shielded mostly by absorption. A minimum reflection loss of similar to 58 dB was achieved in the PVDF/Ni-Fe/MWNT composites in the X-band (8-12 GHz) for a particular size of Ni-Fe alloy nanoparticles. This study brings new insights into the EM shielding efficiency in PVDF/magnetic nanoparticle based composites in the presence and absence of conducting inclusion.

Microwave characterization of multi-walled carbon nanotube arrays

A vertically aligned multi-walled carbon nanotube (VACNT) film has been characterized by rectangular waveguide measurements. The complex scattering parameters (S-parameters) are measured by a vector network analyzer at X-band frequencies. The effective complex permittivity and permeability of the VACNT film have been extracted using the Nicolson-Ross-Weir (NWR) approach. The extracted parameters are verified by full wave simulations (CST Microwave Studio) and very good agreement has been obtained. A systematic error analysis is presented and the errors are within the acceptable range. The performance of VACNT films as an absorber is examined, and comparison with the conventional carbon loaded materials shows that a 90% size reduction is possible whilst maintaining the same absorption level. © 2011 EUROPEAN MICROWAVE ASSOC.

Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers

The work was supported in part by the National Natural Science Foundation of China under Grant 60536010, Grant 60606019, Grant 60777029, and Grant 60820106004, and in part by the National Basic Research Program of China under Grant 2006CB604902, Grant 2006CB302806, and Grant 2006dfa11880.