5 resultados para pulser


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"AEC Contract AT(04-3)-400."

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We describe the design and implementation of a high voltage pulse power supply (pulser) that supports the operation of a repetitively pulsed filtered vacuum arc plasma deposition facility in plasma immersion ion implantation and deposition (Mepiiid) mode. Negative pulses (micropulses) of up to 20 kV in magnitude and 20 A peak current are provided in gated pulse packets (macropulses) over a broad range of possible pulse width and duty cycle. Application of the system consisting of filtered vacuum arc and high voltage pulser is demonstrated by forming diamond-like carbon (DLC) thin films with and without substrate bias provided by the pulser. Significantly enhanced film/substrate adhesion is observed when the pulser is used to induce interface mixing between the DLC film and the underlying Si substrate. (C) 2010 American Institute of Physics. [doi:10.1063/1.3518969]

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Pulseri on laite, joka tuottaa noin 10 MHz:n taajuudella olevan sähköisen pulssin, joka ohjataan kiteeseen. Kide lähettää korkeataajuuksisen ääniaallon ja toimii samalla vastaanottimena kaikuna heijastuneille ääniaalloille. Kide ja membraanikalvo ovat vedessä. Ääniaalto heijastuu takaisin suodatusmembraanikalvosta, jolla on tarkoitus erotella epäpuhtauksia. Membraanikalvo ja kide ovat millimetrin etäisyydellä toisistaan ja ääniaalloilla kestää noin 1,3 mikrosekuntia kulkea kiteestä membraanikalvon pinnalle ja siitä kaikuna takaisin kiteeseen. Saadaksemme luotettavia tuloksia ääniaallon kulkuajasta, kiteen tulee olla värähtelemättömässä tilassa silloin, kun kaikuna palaava pulssi saapuu takaisin. Työssä keskitytään kiteen vaimentamiseen mahdollisimman nopeasti lähetetyn pulssin jälkeen ja siihen liittyviin ongelmiin.

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Ion implantation of nitrogen into samples of tempered and quenched H13 steel was carried out by plasma immersion technique. A glow discharge plasma of nitrogen species was the ion source and the negative high voltage pulser provided 10-12 kV, 60 mu s duration and 1.0-2.0 kHz frequency, flat voltage pulses. The temperatures of the samples remained between 300 and 450 degrees C, sustained solely by the ion bombardment. In some of the discharges, we used a N-2 + H-2 gas mixture with 1:1 ratio. PIII treatments as long as 3, 6, 9 and up to 12 h were carried out to achieve as thickest treated layer as possible, and we were able to reach over 20 mu m treated layers, as a result of ion implantation and thermal (and possibly radiation enhanced) diffusion. The nitrogen depth profiles were obtained by GDOS (Glow Discharge Optical Spectroscopy) and the exact composition profiles by AES (Auger Electron Spectroscopy). The hardness of the treated surface was increased by more than 250%, reaching 18.8 GPa. No white layer was seen in this case. A hardness profile was obtained which corroborated a deep hardened layer, confirming the high efficacy of the moderate temperature PIII treatment of steels. (c) 2005 Elsevier B.V. All rights reserved.

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Testing of summing electronics and VDC A/D Cards was performed to assure proper functioning and operation within defined parameters. In both the summing modules and the VDC A/D cards, testing for minimum threshold voltage for each channel and crosstalk between neighboring channels was performed. Additionally, the modules were installed in Hall A with input signals from shower detectors arranged to establish a trigger by summing signals together with the use of tested modules. Testing involved utilizing a pulser to mimic PMT signals, a discriminator, an attenuator, a scaler, a level translator, an oscilloscope, a high voltage power supply, and a special apparatus used to power and send signal to the A/D cards. After testing, modules were obtained that meet necessary criteria for use in the APEX experiment, and the A/D cards obtained were determined to have adequate specifications for their utilization, with specific results included in the appendix.