Photoluminesence and electroluminescence of the blue emission of devices based on poly(p-phenylenevinylene) copolymers

Bright blue polymer light-emitting diodes have been fabricated by using the poly(p-phenylenevinylene)-based copolymers with 10 C long aliphatic chains as the electroluminescent layers, PBD in PMMA and Alq(3) as the electron-transporting layers, and aluminum as the cathode. The multilayer structure devices show 190 cd/m(2) light-emitting brightness at 460 nm, 15 V turn-on vol- tage. It is found that the intensities of photoluminescence and electroluminescence (EL) increase with increasing aliphatic chain length, the EL intensity and operation stability of these polymer light-emitting diodes can be improved by reasonable design of the structure.

Nature of disorder and localization in amorphous carbon

The electronic structure of amorphous diamond-like carbon is studied. Analysis of the participation ratio shows that π states within the σ-σ* gap are localized. The localization arises from dihedral angle disorder. The localization of π states causes the mobility gap to exceed the optical gap, which accounts for the low carrier mobility and the flat photoluminesence excitation spectrum. © 1998 Elsevier Science B.V. All rights reserved.

Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates

Structural and optical investigations of InAs QDs grown on GaAs (3 1 1)A by molecular beam epitaxy (MBE) were reported. InAs/GaAs (3 1 1)A QDs with nonconventional, faceted, arrowhead-like shapes aligned in the [ - 2 3 3] direction have been disclosed by AFM image. Low defect and dislocation density on the QDs interfaces were indicated by the linear dependence of photoluminescence (PL) intensity on the excitation power. The fast red shift of PL energy and the monotonic decrease of FWHM with increasing temperature were observed and explained by carriers being thermally activated to the energy barrier produced by the wetting layer and then retrapped and recombined in energetically low-lying QDs states. (C) 1999 Elsevier Science B.V. All rights reserved.

POWER DEPENDENCE OF THE RECOMBINATION PROCESSES IN THE INXGA1-XAS/GAAS SINGLE-QUANTUM-WELL

We have measured the power dependence of the photoluminesence spectra from a set of strained InxGa1-xAs/GaAs single quantum wells. The result shows that the excitation power has important effect on the carrier recombination processes. When the power increases from 0.5 to 14 mW, the photoluminescence from the barrier becomes more intense than that from the well and the trapping efficiency decreases. At high excitation level, the ratio of the radiative recombination rate to the nonradiative recombination rate of the barrier increases ten times than that at lower excitation level, while it only doubles for the well.

Synthesis and characterization of alternating copolymers containing triphenylamine as hole-transporting units

A series of light-emitting poly(p-phenylene vinylene)s with triphenylamine units as hole-transporting moieties in the main chain were synthesized via Wittig condensation in good yields. The newly formed vinylene double bonds possessed a trans configuration, which was confirmed by Fourier transform infrared and NMR spectroscopy. The high glass-transition temperature (83-155 degreesC) and high decomposition temperature (> 300 degreesC) suggested that the resulting copolymers possessed high thermal stability. These copolymers, especially TAAPV1, possessed a high weight-average molecular weight (47,144) and a low polydispersity index (1.55). All the copolymers could be dissolved in common organic solvents, such as tetrahydrofuran (THF), CHCl3, CH2Cl2, and toluene, and exhibited intense photoluminesence in THF (the emission maxima were located from 478 to 535 nm) and in film (from 478 to 578 nm). The low onsets of the oxidation potential (0.6-0.75 V) suggested that the alternating copolymers possessed a good hole-transporting property due to the incorporation of triphenylamine moieties. (C) 2001 John Wiley & Sons, Inc.