Local electronic structure, optical bandgap and photoluminescence (PL) properties of Ba(Zr0.75Ti0.25)O3 powders

Ba(Zr0.75Ti0.25)O3 (BZT-75/25) powders were synthesized by the polymeric precursor method. Samples were structurally characterized by X-ray diffraction (XRD), Rietveld refinement, X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) techniques. Their electronic structures were evaluated by first-principle quantum mechanical calculations based on density functional theory at the B3LYP level. Their optical properties were investigated by ultraviolet-visible (UV-Vis) spectroscopy and photoluminescence (PL) measurements at room temperature. XRD patterns and Rietveld refinement data indicate that the samples have a cubic structure. XANES spectra confirm the presence of pyramidal [TiO5] clusters and octahedral [TiO6] clusters in the disordered BZT-75/25 powders. EXAFS spectra indicate distortion of Ti-O and Ti-O-Ti bonds the first and second coordination shells, respectively. UV-Vis absorption spectra confirm the presence of different optical bandgap values and the band structure indicates an indirect bandgap for this material. The density of states demonstrates that intermediate energy levels occur between the valence band (VB) and the conduction band (CB). These electronic levels are due to the predominance of 4d orbitals of Zr atoms in relation to 3d orbitals of Ti atoms in the CB, while the VB is dominated by 2p orbitals related to O atoms. There was good correlation between the experimental and theoretical optical bandgap values. When excited at 482 nm at room temperature, BZT-75/25 powder treated at 500 C for 2 h exhibited broad and intense PL emission with a maximum at 578 nm in the yellow region. © 2013 Elsevier Ltd. All rights reserved.

Multiband photoluminescence from carbon nanoflakes synthesized by hot filament CVD: towards solid-state white light sources

Carbon nanoflakes (CNFLs) are synthesized on silicon substrates deposited with carbon islands in a methane environment using hot filament chemical vapor deposition. The structure and composition of the CNFLs are studied using field emission scanning electron microscopy, high-resolution transmission electron microscopy, micro-Raman spectroscopy, and X-ray photoelectron spectroscopy. The results indicate that the CNFLs are composed of multilayer graphitic sheets and the area and thickness of CNFs increase with the growth time. The photoluminescence (PL) of CNFLs excited by a 325 nm He-Cd laser exhibits three strong bands centered at 408, 526, and 699 nm, which are related to the chemical radicals terminated on the CNFLs and the associated interband transitions. The PL results indicate that the CNFLs are promising as an advanced nano-carbon material capable of generating white light emission. These outcomes are significant to control the electronic structure of CNFLs and contribute to the development of next-generation solid-state white light emission devices. © 2014 the Partner Organisations.

How thick SiO2 cap layer is needed to achieve strong visible photoluminescence from SiO2-buffered SiNx films?

The effect of a SiO2 nanolayer and annealing temperature on the UV/visible room-temperature photoluminescence (PL) from SiNx films synthesized by rf magnetron sputtering is studied. The PL intensity can be maximized when the SiO2 layer is 510 nm thick at 800 °C annealing temperature and only 2 nm at 1000 °C. A compositionstructureproperty analysis reveals that the PL intensity is directly related to both the surface chemical states and the content of the SiO and SiN bonds in the SiNx films. These results are relevant for the development of advanced optoelectronic and photonic emitters and sensors. © 2010 Elsevier B.V. All rights reserved.

Visible photoluminescence from plasma-synthesized SiO 2-buffered SiN x films : effect of film thickness and annealing temperature

The effect of the film thickness and postannealing temperature on visible photoluminescence (PL) from Si Nx films synthesized by plasma-assisted radio frequency magnetron sputtering on Si O2 buffer layers is investigated. It is shown that strong visible PL is achieved at annealing temperatures above 650 °C. The optimum annealing temperature for the maximum PL yield strongly depends on the film thickness and varies from 800 to 1200°C. A comparative composition-structure-property analysis reveals that the PL intensity is directly related to the content of the Si-O and Si-N bonds in the Si Nx films. Therefore, sufficient oxidation and moderate nitridation of Si Nx Si O2 films during the plasma-based growth process are crucial for a strong PL yield. Excessively high annealing temperatures lead to weakened Si-N bonds in thinner Si Nx films, which eventually results in a lower PL intensity.

SiC-like phase and room-temperature photoluminescence of low-k SiOCH films

Carbon-doped hydrogenated silicon oxide (SiOCH) low-k films have been prepared using 13.56 MHz discharge in trimethylsilane (3MS) - oxygen gas mixtures at 3, 4, and 5 Torr sustained with RF power densities 1.3 - 2.6 W/cm2. The atomic structure of the SiOCH films appears to be a mixture the amorphous SiO2-like and the partially polycrystalline SiC-like phases. Results of the infra-red spectroscopy reflect the increment in the volume fraction of the SiC-like phase from 0.22 - 0.28 to 0.36 - 0.39 as the RF power increment. Steady-state near-UV laser-excited (364 nm wavelength, 40±2 mW) photoluminescence (PL) has been studied at room temperatures in the visible (1.8 eV - 3.1 eV) subrange of photon spectrum. Two main bands of the PL signal (at the photon energies of 2.5 - 2.6 eV and 2.8 - 2.9 eV) are observed. Intensities of the both bands are changed monotonically with RF power, whereas the bandwidth of ∼0.1 eV remains almost invariable. It is likely that the above lines are dumped by the non-radiative recombination involving E1-like centres in the amorphous-nanocrystalline SiC-like phases. Such explanation of the PL intensity dependences on the RF power density is supported by results of experimental studies of defect states spectrum in bandgap of the SiOCH films.

Synthesis, characterization and photoluminescence properties of Gd2O3:Eu3+ nanophosphors prepared by solution combustion method

Gd2O3:Eu3+ (0.5-8.0 mol%) nanophosphors have been prepared by low temperature solution combustion method using metal nitrates as oxidizers and oxalyl dihydrazide (ODH) as a fuel. The phosphors are well characterized by powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR) and photoluminescence (PL) techniques. PXRD patterns of as-formed and calcined (800 degrees C, 3 h) Gd2O3 powders exhibit monoclinic phase with mean crystallite sizes ranging from 20 to 50 nm. Eu3+ doping changes the structure from monoclinic to mixed phase of monoclinic and cubic. SEM micrographs shows the products are foamy, agglomerated and fluffy in nature due to the large amount of gases liberated during combustion reaction. Upon 254 nm excitation the photoluminescence of the Gd2O3:Eu3+ particles show red emission at 611 nm corresponding to D-5(0)-> F-7(2) transition. It is observed that PL intensity increases with calcination temperature. This might be attributed to better crystallization and eliminates the defects, which serve as centers of non-radiative relaxation for nanomaterials. It is observed that the optical energy gap (E-g) is widened with increase Eu3+ content. (C) 2010 Elsevier B.V. All rights reserved.

Synthesis and enhanced green photoluminescence emission from BCT ZnS nanocrystals

Body-centered-tetragonal (BCT) ZnS nanocrystals have been synthesized, for the first time to the best of our knowledge, by using the chemical coprecipitation method at higher synthesis temperatures of 65 and 95 degrees C. It is confirmed from X-ray diffraction (XRD) studies that in the high-temperature-synthesized samples, cubic and BCT phases coexist, in contrast to the room-temperature-synthesized sample, which consists of only cubic phase with sizes of the particles lying between 2 and 3 nm. The sizes of BCT phase nanocrystals are bigger than those of cubic phase of ZnS. The presence of BCT phase of ZnS in the samples is increased from 40 to 90% when the temperature of synthesis is increased from 65 to 95 degrees C. The nanocrystalline nature and UV-Vis absorption characteristics of the prepared samples have been studied with a transmission electron microscope (TEM) and a UV-Visible pectrophotometer, respectively. The room-temperature-synthesized ZnS sample shows photoluminescence (PL) emission in the blue region with multiple peaks, whereas the high-temperature-synthesized samples show PL emissions in the visible region. The Gaussian fittings of the measured PL spectra shows that three PL peaks at 429, 477, and 525 nm are appeared in the 65 degrees C sample and two peaks at 491 and 540 nm appear in the 95 degrees C sample with the enhanced PL intensity of the green peak at 540 nm. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Effect of sintering on optical, structural and photoluminescence properties of ZnO thin films prepared by sol-gel process

Zinc oxide (ZnO) thin films have been deposited on glass substrates via sol-gel technique using zinc acetate dihydrate as precursor by spin coating of the sol at 2000 rpm. Effects of annealing temperature on optical, structural and photo luminescence properties of the deposited ZnO films have been investigated. The phase transition from amorphous to polycrystalline hexagonal wurtzite structure was observed at an annealing temperature of 400 degrees C. An average transmittance of 87% in the visible region has been obtained at room temperature. The optical transmittance has slightly increased with increase of annealing temperature. The band gap energy was estimated by Tauc's method and found to be 3.22 eV at room temperature. The optical band gap energy has decreased with increasing annealing temperature. The photoluminescence (PL) intensity increased with annealing temperature up to 200 degrees C and decreased at 300 degrees C. (c) 2010 Elsevier B.V. All rights reserved.

Two beam photoluminescence of PbS quantum dots in polyvinyl alcohol

We report the effect of dual beam excitation on the photoluminescence (PL) from PbS quantum dots in polyvinyl alcohol by using two excitation lasers, namely Ar+ (514.5 nm) and He-Ne laser (670 nm). Both sources of excitation gave similar PL spectra around 1.67 eV (related to shallow traps) and 1.1 eV (related to deep traps). When both lasers were used at the same time, we found that the PL induced by each of the lasers was partly quenched by the illumination of the other laser. The proposed mechanism of this quenching effect involves traps that are populated by one specific laser excitation, being photo-ionized by the presence of the other laser. Temperature, laser intensity and modulation frequency dependent quenching efficiencies are presented in this paper. This reversible modulation has potential for optical switching and memory device applications. (C) 2010 Elsevier B.V. All rights reserved.

Effect of Li+-ion on enhancement of photoluminescence in Gd2O3:Eu3+ nanophosphors prepared by combustion technique

Gd2O3:Eu3+ (4 mol%) nanophosphor co-doped with Li+ ions have been synthesized by low-temperature solution combustion technique in a short time. Powder X-ray diffractometer (PXRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR), UV-VIS and photoluminescence (PL) techniques have been employed to characterize the synthesized nanoparticles. It is found that the lattice of Gd2O3:Eu3+ phosphor transforms from monoclinic to cubic as the Li+-ions are doped. Upon 254 nm excitation, the phosphor showed characteristic luminescence D-5(0) -> F-7(J) (J= 0-4) of the Eu3+ ions. The electronic transition located at 626 nm (D-5(0) -> F-7(2)) of Eu3+ ions was stronger than the magnetic dipole transition located at 595 nm (D-5(0) -> F-7(1)). Furthermore, the effects of the Li+ co-doping as well as calcinations temperature on the PL properties have been studied. The results show that incorporation of Li+ ions in Gd2O3:Eu3+ lattice could induce a remarkable improvement of their PL intensity. The emission intensity was observed to be enhanced four times than that of with out Li+-doped Gd2O3:Eu3+. (C) 2010 Elsevier B.V. All rights reserved,

Temperature-dependent photoluminescence of GaN grown on beta-Si3N4/Si (111) by plasma-assisted MBE

Photoluminescence (PL) of high quality GaN epitaxial layer grown on beta-Si3N4/Si (1 1 1) substrate using nitridation-annealing-nitridation method by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated in the range of 5-300 K. Crystallinity of GaN epilayers was evaluated by high resolution X-ray diffraction (HRXRD) and surface morphology by Atomic Force Microscopy (AFM) and high resolution scanning electron microscopy (HRSEM). The temperature-dependent photoluminescence spectra showed an anomalous behaviour with an `S-like' shape of free exciton (FX) emission peaks. Distant shallow donor-acceptor pair (DAP) line peak at approximately 3.285 eV was also observed at 5 K, followed by LO replica sidebands separated by 91 meV. The activation energy of the free exciton for GaN epilayers was also evaluated to be similar to 27.8 +/- 0.7 meV from the temperature-dependent PL studies. Low carrier concentrations were observed similar to 4.5 +/- 2 x 10(17) Cm-3 by measurements and it indicates the silicon nitride layer, which not only acts as a growth buffer layer, but also effectively prevents Si diffusion from the substrate to GaN epilayers. The absence of yellow band emission at around 2.2 eV signifies the high quality of film. The tensile stress in GaN film calculated by the thermal stress model agrees very well with that derived from Raman spectroscopy. (C) 2010 Elsevier B.V. All rights reserved.

Photoluminescence studies on gray tracked KTiOPO4 single crystals

The photochromic, electrochromic and x-ray irradiation damages (commonly called the gray tracks) produced in KTiOPO4 single crystals have been studied using photoluminescence (PL) spectroscopy. Gray tracks were produced in this material by exposure to high laser powers (similar to MW/cm(2)), application of electric fields (similar to kV), and exposure to x rays (30 kV). The PL spectra recorded for such gray tracked samples at 4.2 K, exhibited a luminescence band in the 1-1.8 eV range with a peak at 1.41 eV. Temperature and excitation intensity dependence of PL peaks were carried out to probe the exact nature of the broad emission band in the gray tracked samples. The observed photoluminescence is attributed to transitions in the Ti3+ levels, created on irradiation. The microscopic effects produced in the crystal by electric field, optical field, and x rays are similar, as can be concluded from the similarity of PL spectra as well as their intensity and temperature dependences. (C) 1999 American Institute of Physics. [S0021-8979(99)04512-0].

PL due to Discrete Gap Levels in Some Chalcogenide Glasses- A Configurational Coordinate Diagram Illustration

Photoluminescence (PL) studies were carried out on a-Se and a few Ge20Se80−xBix and Ge20Se70−xBixTe10 bulk glassy semiconductors at 4.2 K with Ar+ laser as excitation source. While a-Se and samples with lesser at% of Bi show fine structured PL with a large Stokes shift, samples with higher at% of Bi did not show any detectable PL. The investigations show at least three radiative recombination transitions. Features extracted by deconvoluting the experimental spectra show that the discrete gap levels associated with the inherent coordination defects are involved in the PL transitions. Absence of PL in samples with higher Bi at% are explained on the basis of nonradiative transition mechanisms. Overall PL mechanism involving gap levels in chalcogenide glasses is illustrated with the help of a configurational coordinate diagram.

Hydrogen Passivation of Shallow Dopants in InP Studied by Photoluminescence Spectroscopy

The effect of hydrogenation on the photoluminescence (PL) of InP : Mg, InP : Zn and undoped n-InP is presented. An increase in the near band edge pl intensity due to passivation of non-radiative centers was observed in all the samples. A donor - acceptor pair transition was observed before hydrogenation in the InP : Mg sample and after hydrogenation in the InP : Zn sample due to the acceptor deactivation. In n-InP the enhancement of donor bound exciton after hydrogenation points to the absence of donor passivation.

Photoluminescence of Sr(2-x)Ln(x)CeO(4+x/2) (Ln = Eu, Sm or Yb) prepared by a wet chemical method

A wet chemical route is developed for the preparation of Sr2CeO4 denoted the carbonate-gel composite technique. This involves the coprecipitation of strontium as fine particles of carbonates within hydrated gels of ceria (CeO2.xH(2)O, 40plete phase purity. Doping of other rare-earths is carried out at the co-precipitation stage. The photoluminescence (PL) observed for Sr2CeO4 originates from the Ce4+-O2- charge-transfer (CT) transition resulting from the interaction of Ce4+ ion with the neighboring oxide ions. The effect of next-nearest-neighbor (NNN) environment on the Ce4+-O2- CT emission is studied by doping with Eu3+, Sm3+ or Yb3+ which in turn, have unique charge-transfer associated energy levels in the excited states in oxides. Efficient energy transfer occurs from Ce4+-O2- CT state to trivalent lanthanide ions (Ln(3+)) if the latter has CT excited states, leading to sensitizer-activator relation, through non-resonance process involving exchange interaction. Yb3+-substituted Sr2CeO4 does not show any line emission because the energy of Yb3+-O2- CT level is higher than that of the Ce4+-O2- CT level. Sr2-xEuxCeO4+x/2 shows white emission at xless than or equal to0.02 because of the dominant intensities of D-5(2)-F-7(0-3) transitions in blue-green region whereas the intensities of D-5(0)-F-7(0-3) transitions in orange-red regions dominate at concentrations xgreater than or equal to0.03 and give red emission. The appearance of all the emissions from D-5(2), D-5(1) and D-5(0) excited states to the F-7(0-3) ground multiplets of Eu3+ is explained on the basis of the shift from the hypersensitive electric-dipole to magnetic-dipole related transitions with the variation in site symmetry with increasing concentration of Eu3+. White emission of Sr2-x SmxCeO4+x/2 at xless than or equal to0.02 is due the co-existence of Ce4+-O2- CT emission and (4)G(4)(5/2)-H-6(J) Sm3+ transitions whereas only the Sm3+ red emission prevails for xgreater than or equal to0.03. The above unique changes in PL emission features are explained in terms of the changes in NNN environments of Ce4+. Quenching of Ce4+-O2- CT emission by other Ln(3+) is due to the ground state crossover arising out of the NNN interactions.