Calibration method for a photoelastic modulator with a peak retardation of less than a half-wavelength

A new calibration method for a photoelastic modulator is proposed. The calibration includes a coarse calibration and a fine calibration. In the coarse calibration, the peak retardation of the photoelastic modulator is set near 1.841 rad. In the fine calibration, the value of the zeroth Bessel function is obtained. The zeroth Bessel function is approximated as a linear equation to directly calculate the peak retardation. In experiments, the usefulness of the calibration method is verified and the calibration error is less than 0.014 rad. The calibration is immune to the intensity fluctuation of the light source and independent of the circuit parameters. The method specially suits the calibration of a photoelastic modulator with a peak retardation of less than a half-wavelength. (c) 2007 Optical Society of America.

Enhanced sensitivity in detection of Kerr rotation by double modulation and time averaging based on Allan variance

Experiments in spintronics necessarily involve the detection of spin polarization. The sensitivity of this detection becomes an important factor to consider when extending the low temperature studies on semiconductor spintronic devices to room temperature, where the spin signal is weaker. In pump-probe experiments, which optically inject and detect spins, the sensitivity is often improved by using a photoelastic modulator (PEM) for lock-in detection. However, spurious signals can arise if diode lasers are used as optical sources in such experiments, along with a PEM. In this work, we eliminated the spurious electromagnetic coupling of the PEM onto the probe diode laser, by the double modulation technique. We also developed a test for spurious modulated interference in the pump-probe signal, due to the PEM. Besides, an order of magnitude enhancement in the sensitivity of detection of spin polarization by Kerr rotation, to 3x10(-8) rad was obtained by using the concept of Allan variance to optimally average the time series data over a period of 416 s. With these improvements, we are able to experimentally demonstrate at room temperature, photoinduced steady-state spin polarization in bulk GaAs. Thus, the advances reported here facilitate the use of diode lasers with a PEM for sensitive pump-probe experiments. They also constitute a step toward detection of spin-injection in Si at room temperature.

基于光栅成像投影的微位移检测方法

提出了一种基于光栅成像投影的微位移检测方法，利用光学傅里叶变换原理给出了具体的理论分析。准直激光束照明的光栅通过一个4f系统成像投影在被测物体表面上，光栅投影经过被测物体表面反射后由另一个4f系统成像在探测光栅上。探测光栅由一个透镜组成像在光电探测器上，其中采用由起偏器、光弹调制器和检偏器组成的偏振调制单元对探测光强进行调制。通过在4f系统的频谱面上设置滤波光阑，在光电探测器上获得了与被测物体的微位移成正弦关系的光强变化，检测出光电探测器上的光强变化即可以获得被测物体的位移量。实验验证了该检测方法的可行性

精确标定光弹调制器的新方法

针对现有光弹调制器标定方法的不足，提出了一种精确标定光弹调制器的新方法。首先利用起偏器、波片、光弹调制器和检偏器构成标定光路．通过寻找探测信号基频分量的极大值进行粗略标定，使光弹调制器的峰值延迟量处在1．841rad附近。然后撤走波片形成光弹凋制器的精确标定光路．在检偏器旋转90°前后获得探测信号的直流分量和二次谐波分量。最后利用这两种探测信号的直流分量和二次谐波分量精确地计算出光弹调制器的峰值延迟量。实验验让了此光掸调制器标定方法，实验结果表明其标定误差仅为0．7％。在此光掸凋制器标定方法中．光弹调制器

光弹调制器在偏振方向调制中的应用

提出了一种将光弹调制器应用于偏振方向调制的方法．介绍了它的两种基本使用模式，利用琼斯矩阵对其偏振方向调制原理及其两种基本使用模式进行了分析。光弹调制器和1／4波片形成偏振方向调制器件时，光弹调制器处于两块透光轴相互垂直的1／4波片之间．且光弹调制器的振动轴分别和两块1／4波片的透光轴成±45°角，线偏振光通过此器件其偏振方向被调制。实验验证了光弹调制器组合1／4波片调制偏振方向的原理。将光弹调制器应用在偏振方向的调制中．使现有偏振方向调制技术的光谱范围扩展到了紫外波段。

Two-channel waveguide modulator based on surface wave propagating in a semiconductor-metal thin-film structure

The results of theoretical investigations of two-channel waveguide modulator based on Surface Wave (SW) propagation are presented. The structure studied consists of two n-type semiconductor waveguide channels separated from each other by a dielectric gap and coated by a metal. The SW propagates at the semiconductor-metal interface across an external magnetic field which is parallel to the interface. An external dc voltage is applied to the metal surface of one channel to provide a small phase shift between two propagating modes. In a coupled mode approximation, two possible regimes of operation of the structure, namely as a directional coupler and as an electro-optical modulator, are considered. Our results suggest new applications in millimeter and submillimeter wave solid-state electronics and integrated optics.

A Bit-Stream based space vector modulator

Bit-Stream based control, which uses one bit wide signals to control power electronics applications, is a new approach for controller design in power electronic systems. Bit-Stream signals are inherently high frequency in nature, and as such some form of down sampling or modulating is essential to avoid excessive switching losses. This paper presents a novel three-phase space vector modulator, which is based on the Bit-Stream technique and suitable for standard three-phase inverter systems. The proposed modulator simultaneously converts a two phase reference to the three-phase domain and reduces switching frequencies to reasonable levels. The modulator consumes relatively few logic elements and does not require sector detectors, carrier oscillators or trigonometric functions. The performance of the modulator was evaluated using ModelSim. Results indicate that, subject to limits on the modulation index, the proposed modulator delivers a spread-spectrum output with total harmonic distortion comparable to standard space vector pulse width modulation techniques.

Photoelastic parametric studies of mode I stress intensity factors

Results of photoelastic investigations on single edge-notch tension specimens of varying notch angle and crack length are reported. The experimental results of Mode I stress intensity factors are compared with analytical results.

Photoelastic determination of stress intensity factors in patched cracked plates

n this paper, the influence of patch parameters on stress intensity factors in edge cracked plates is studied by employing transmission photoelasticity. Edge cracked plates made of photo-elastic material are patched on one side only by E glass-epoxy and carbon-epoxy unidirectional composites. The patch is located on the crack in such a way that the crack tip is not covered. Magnified isochromatic fringes are obtained by using a projection microscope of magnification 50, converted into a polariscope. Irwin's method is used to compute stress intensity factors from photoelastic data. The reduction in stress intensity factors is presented in graphical form as a function of patch parameters, namely stiffness, location and length. An empirical equation connecting reduction in stress intensity factor and these patch parameters is presented.

Constant factor incremental delta modulator

This paper presents a new algorithm for the step-size change of instantaneous adaptive delta modulator. The present strategy is such that the step-size at any sampling instant can increase or decrease by either of the two constant factors or can remain the same, depending upon the combination of three or four most recent output bits. The quantizer has been simulated on a digital computer, and its performance compared with other quantizers. The figure of merit used is the SNR with gaussian signals as the input. The results indicate that the new design can give an improved SNR over a wider dynamic range and fast response to step inputs, as compared to the earlier systems.

Determination of mode 1 notch stress intensity factor by the photoelastic technique

The structural integrity of any member subjected to a load gets impaired due to the presence of cracks or crack-like defects. The notch severity is one of the several parameters that promotes the brittle fracture. The most severe one is an ideal crack with infinitesimal width and infinitesimal or zero root radius. Though analytical investigations can handle an ideal crack, experimental work, either to validate the analytical conclusions or to impose the bounds, needs to be carried out on models or specimens containing the cracks which are far from the ideal ones. Thus instead of an ideal crack with infinitesimal width the actual model will have a slot or a slit of finite width and instead of a crack ending in zero root radius, the model contains a slot having a finite root radius. Another factor of great significance at the root is the notch angle along which the transition from the slot to the root takes place. This paper is concerned with the photoelastic determination of the notch stress intensity factor in the case of a “crack” subjected to Mode 1 deformation.