Efficient InGaAsP/InP multiple quantum well optical phase modulator for the 1.5-1.55μm fiber band

We report an InGaAsP/InP MQW phase modulator operating over the entire 1.55μm fiber band with high phase modulation efficiency and low loss modulation. The spectral dependence of the electro-refraction in a MQW structure is measured for the first time.

A high-performance Si-based MOS electrooptic phase modulator with a shunt-capacitor configuration

A novel Si-based metal-oxide-semiconductor (MOS) electrooptic phase modulator including two shunt oxide layer capacitors integrated on a silicon-on-insulator (SOI) waveguide is simulated and analyzed. The refractive index near the two gate oxide layers is modified by the free carrier dispersion effect induced by applying a positive bias on the electrodes. The theoretical calculation of free carrier distribution coupled with optical guided mode propagation characteristics has been carried out. The influence of the structure parameters such as the width and the doping level of the active region are analyzed. A half-wave voltage V-pi = 4 V is demonstrated with an 8-mm active region length and a 4-mu m width of an inner rib under an accumulation mode. When decreasing the inner rib width to 1 mu m, the phase modulation efficiency is even higher, and the rise and fall times reach 50 and 40 ps, respectively, with a 1.0 x 10(17) cm(-3) doping level in the active region.

Design considerations for a silicon-based p-i-n phase modulator in a double ridge waveguide with side isolating grooves

We present detail design considerations and simulation results of a forward biased carrier injection p-i-n modulator integrated on SOI rib waveguides. To minimize the free carrier absorption loss while keeping the comparatively small lateral dimensions of the modulator as required for high speed operation, we proposed two structural improvements, namely the double ridge (terrace ridge) structure and the isolating grooves at both sides of the double ridge. With improved carrier injection and optical confinement structure, the simulated modulator response time is in sub-ns range and absorption loss is minimized.

A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor

We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOI).Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure,which boosts the modulation efficiency compared with a single MOS capacitor.The simulation results demonstrate that the VπLπ product is 2.4V·cm.The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve,respectively,indicating a bandwidth of 8GHz.The phase shift efficiency and bandwidth can be enhanced by rib width scaling.

Evaluating the Capacity of Phase Modulator-Controlled Long-Haul Soliton Transmission

We review recent developments in the use of optical solitons for communication systems spanning transoceanic distances. The implementation of "soliton control" to alleviate the detrimental impact of effects such as amplifier noise is shown to be critical for obtaining advantages over competing technologies. The potential performance of two control strategies, namely straight line filtering and synchronous phase modulation, is examined in detail. Design diagrams are used to determine the maximum permissible amplifier spacing, which is a key determinant of system economics. To focus the enquiry, two example system spans are taken, representing transatlantic and transpacific distances. It is concluded that straight line filtering provides very little improvement over a basic design without control. However synchronous phase modulation, which may be implemented using a handful of actively driven components, provides very substantial benefits. These may be used either to extend the overall bit-rate-distance product of the system or to increase the amplifier spacing at more moderate capacities. © 1995 Academic Press. All rights reserved.

Polarization dependent photorefractive amplitude modulation production in MgO:LiNbO 3 phase modulators

We present experimental and theoretical results of the intensity dependence of residual amplitude modulation (RAM) production in electro-optic phase modulators. By utilizing the anisotropy of the medium, we show that RAM has a photorefractive origin.

Phase modulation of microwave signals using point contact Germanium signal diodes

A forward - biased point contact germanium signal diode placed inside a waveguide section along the E -vector is found to introduce significant phase shift of microwave signals . The usefulness of the arrangement as a phase modulator for microwave carriers is demonstrated. While there is a less significant amplitude modulation accompanying phase modulation , the insertion losses are found to be negligible. The observations can be explained on the basis of the capacitance variation of the barrier layer with forward current in the diode

Bit-stream-based space vector modulators

Bit-stream-based control, which uses one bit wide signals to control power electronics applications, is a new approach for controller design in power electronic systems. This study presents a novel family of three-phase space vector modulators, which are based on the bit-stream technique and suitable for three-phase inverter systems. Each of the proposed modulators simultaneously converts a two-phase reference to the three-phase domain and reduces switching frequencies to reasonable levels. The modulators do not require carrier oscillators, trigonometric functions or, in some cases, sector detectors. A complete three-phase modulator can be implemented in as few as 102 logic elements. The performance of the proposed modulators is compared through simulation and experimental testing of a 6 kW, three-phase DC-to-AC inverter. Subject to limits on the modulation index, the proposed modulators deliver spread-spectrum output currents with total harmonic distortion comparable to a standard carrier-based space vector pulse width modulator.