1000 resultados para perda dielétrica


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A medição da capacitância e da condutância de um capacitor contendo amostras de trigo permite a determinação de duas de suas propriedades dielétricas: a permissividade relativa (épsilon') e o fator de perda dielétrica (épsilon"). A utilização dessas propriedades, medidas simultaneamente em duas freqüências de oscilação do campo elétrico, permite reduzir ou eliminar o efeito da massa específica aparente na determinação do teor de umidade do trigo. Tal procedimento torna possível o monitoramento contínuo e em tempo real, sem a necessidade de retirar amostras, do teor de umidade de uma coluna de grãos em movimento, situação em que ocorrem as maiores variações na massa específica do produto. O objetivo deste trabalho consistiu na obtenção de equações que permitam reduzir ou eliminar o efeito da massa específica na determinação em linha do teor de umidade do trigo. Foram utilizadas amostras das variedades Hussar, Mercia e Hereward com teor de umidade entre 11% e 22% b.u. e massa específica no intervalo 666 kg m-3 <= ro <= 873 kg m-3. A equação que apresentou melhor desempenho permite calcular o teor de umidade do trigo com erros-padrão de calibração e de predição de 0,4 e 0,5 ponto percentual, respectivamente.

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O desenvolvimento de modelos matemáticos que correlacionem a permissividade elétrica relativa épsilon' e o fator de perda dielétrica épsilon" à quantidade de água presente em amostras de sementes é um passo fundamental no desenvolvimento de medidores em linha do teor de água que possam ser empregados no controle automático de processos como colheita, secagem e aeração. Esse trabalho consistiu na avaliação de três modelos dielétricos para determinação do teor de água de sementes de café, sem a influência do fluxo de massa. Foram utilizadas amostras das variedades Catuaí Amarelo, Catuaí Vermelho e Mundo Novo, com teores de água entre 11 e 23% b.u. e massa específica aparente no intervalo 326 kg m-3 < r < 455 kg m-3. Dos modelos obtidos, apenas aquele que utiliza a medição simultânea de épsilon' e épsilon", a 0,5 e 5,0 MHz, permite estimar o teor de água de sementes de café com o grau de acurácia desejado. Os erros padrão de calibração e predição foram de 1,3 e 1,2 pontos percentuais, respectivamente.

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A permissividade complexa de filmes de poli(eter-eter-cetona) (PEEK) foram investigados num grande intervalo de frequência. Não foram observados picos de relaxação no intervalo de frequência de 1,0 Hz a 10(5) Hz, mas no intervalo de baixa frequência (10-4 Hz) há uma evidência de pico, o qual também pode ser observado com medidas de corrente de despolarização termo-estimulada (TSDC). Este pico está relacionado com a transição vítrea do polímero. A energia de ativação relacionada a esta relaxação dipolar foi obtida e ovalor é Ea = 0,44 eV, que é similar à energia de ativação de muitos polímeros sintéticos. As cargas espaciais se mostraram importantes no mecanismo de condução como evidenciado nas medidas da corrente de despolarização.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Pós-graduação em Ciência e Tecnologia de Materiais - FC

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Technology always advances and thus the device miniaturization and improved performance, besides multifunctionality, they become extremely necessary. A wave of research on the area tends to grow in number and importance in today's market, it is necessary to search for new materials, new applicability of the existing ones and new processes for increasingly cheaper costs. Dielectric materials are considered a key element in this sector being the main electrical properties its high dielectric constant and low dielectric loss. The Polymeric Precursor Method appears as a good alternative because is a low cost, simple process with controlled stoichiometry. In this method, two steps were performed. In a first step, the precursor solution was decomposed into powders and in a second step the precursor solution was converted in thin films. In this work, was used the polymeric precursor methods to get thin films where they were heat treated and characterized by XRD, SEM and AFM. We have obtained Bi3NbO7 thin films with good homogeneity and uniform distribution of grains were noted. We observed that the best condition to obtain the tetragonal phase is annealing the film at high temperatures for a longer soaking time and with excess of bismuth. Several oxides electrodes were evaluated aiming to obtain textured dielectric thin films

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Pós-graduação em Ciência e Tecnologia de Materiais - FC

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Ferroelectric ceramics with perovskite structure (ABO3) are widely used in solid state memories (FeRAM’s and DRAM's) as well as multilayered capacitors, especially as a thin films. When doped with zirconium ions, BaTiO3-based materials form a solid solution known as barium zirconate titanate (BaTi1-xZrxO3). Also called BZT, this material can undergo significant changes in their electrical properties for a small variation of zirconium content in the crystal lattice. The present work is the study of the effects of deposition parameters of BaTi0,75Zr0,25O3 thin films by spin-coating method on their morphology and physical properties, through an experimental design of the Box-Behnken type. The resin used in the process has been synthesized by the polymeric precursor method (Pechini) and subsequently split into three portions each of which has its viscosity adjusted to 10, 20 and 30 mPa∙s by means of a rotary viscometer. The resins were then deposited on Pt/Ti/SiO2/Si substrates by spin-coating method on 15 different combinations of viscosity, spin speed (3000, 5500 and 8000 rpm) and the number of deposited layers (5, 8 and 11 layers) and then calcined at 800 ° C for 1 h. The phase composition of the films was analyzed by X-ray diffraction (XRD) and indexed with the JCPDS 36-0019. Surface morphology and grain size were observed by atomic force microscopy (AFM) indicating uniform films and average grain size around 40 nm. Images of the cross section of the films were obtained by scanning electron microscopy field emission (SEM-FEG), indicating very uniform thicknesses ranging from 140-700 nm between samples. Capacitance measurements were performed at room temperature using an impedance analyzer. The films presented dielectric constant values of 55-305 at 100kHz and low dielectric loss. The design indicated no significant interaction effects between the deposition parameters on the thickness of the films. The response surface methodology enabled better observes the simultaneous effect of variables.

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The dielectric porcelain is usually obtained by mixing various raw materials proportions and is used in the production of electronic equipment for various applications, from capacitors of high and low Power to insulators for low, medium, high and extra high voltage, which are used in distribution lines and transmission of electricity.This work was directed to the s tudy of technological properties of technic porcelain, made from raw materials extracted from pegmatites found in the regions of Seridó and the Alto Oeste of Rio Grande do Norte, which are made of kaolin, quartz and feldspar, abundant and high quality in these regions. The technic ceramics were obtained by mixing in appropriate levels, kaolin, feldspar, quartz and clay, the last item from a pottery in the city of Sao Gonçalo do Amarante, Rio Grande do Norte. During the development the following characterizations correlated to raw materials were made: laser particle sizing, x-ray diffraction, DTA and TG. The compositions studied were formed by uniaxial pressing at a pressure of 50 MPa and sintered at temperatures ranging from 1150 to 1350ºC and levels (times) of sintering between 30, 60, 90 and 120 minutes. The characterization of the samples were taken from the analysis of weight loss, linear shrinkage, porosity, stoneware curve, bulk density, flexural strength of three points, SEM and X-ray diffraction, TMA, Dielectric and cross Resistivity. The studied materials can be employed in producing the objects used in electrical engineering such as: insulators for low, medium and high-voltage electrical systems, command devices, bushing insulation for transformers, power capacitors, spark plugs, receptacles for fluorescent and incandescent light bulbs and others

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Bi3NbO7 thin films were prepared by the polymeric precursor method. The precursor solutions were prepared with excess of bismuth ranging from 0% to 10% and the pH was controlled to be maintained between 8 and 9. This control was done by adding to the solution niobium and ethylene glycol. The final solution was clear and free of precipitation. After obtaining the precursor solution, has begun the process of characterization of powders with thermogravimetry (TG), differential thermal analysis and X-ray analysis (XRD). The films were obtained by the polymeric precursors, the method is advantageous because it is simple, and low cost involves steps and controlled stoichiometry. The films were annealed and characterized by XRD and SEM and also characterized according to their dialectics properties. We observed that the best results were obtained when the film is thermally at 800 ° C for two hours and 860 ° C for two hour. Under these conditions we obtain Bi3NbO7 thin films with good homogeneity, uniform distribution of the grains, but with the formation of secondary phase, which does not occur in treatments with lower temperature. The dielectric characterization showed that the produced film showed good characteristics with high dielectric constant and low loss