Effects of Patterned Substrate on Thin Films Simulated by Family Model

Patterned substrate growth has been a subject of much interest. In this work, characteristics of some statistical properties of a film grown on triangular and vicinal substrates using the Family model are studied. Substrate size and tilt angle are varied. It is found that the interface width and the correlation function increase as the roughness of the pattern is increased. The new scaling exponents are calculated and anomalous scaling is obtained. The transient persistence probability does not show a power law relation when the initial surface is sufficiently rough. The initial rough surface also causes multifractal behavior in the model.

Evidence of quantum lateral confinement in side-gated resonant tunnelling diodes formed by patterned substrate regrowth

MBE regrowth on patterned np-GaAs wafers has been used to fabricate GaAs/AlGaAs double barrier resonant tunnel diodes with a side-gate in the plane of the quantum well. The physical diameters vary from 1 to 20 μm. For a nominally 1 μm diameter diode the peak current is reduced by more than 95% at a side-gate voltage of -2 V at 1.5 K, which we estimate corresponds to an active tunnel region diameter of 75 nm ± 10 nm. At high gate biases additional structure appears in the conductance data. Differential I-V measurements show a linear dependence of the spacing of subsidiary peaks on gate bias indicating lateral quantum confinement. © 1996 American Institute of Physics.

Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate

We report the growth of well-ordered InAs QD chains by molecular beam epitaxy system. In order to analyze and extend the results of our experiment, a detailed kinetic Monte Carlo simulation is developed to investigate the effects of different growth conditions to the selective growth of InAs quantum dots (QDs). We find that growth temperature plays a more important role than growth rate in the spatial ordering of the QDs. We also investigate the effect of periodic stress on the shape of QDs in simulation. The simulation results are in good qualitative agreement with our experiment. (c) 2006 Elsevier Ltd. All rights reserved.

Nanofabrication of grid-patterned substrate by holographic lithography

The two-dimensional grid patterns on Si(001) in nanometer scale have been fabricated by holographic lithography and reactive ion etching, which can be used as a substrate for positioning Ge islands during self-assembled epitaxy to obtain an ordered Ge quantum dots matrix. By changing the configuration of the holographic lithography and the etching rate and time, we can control the grid period, the shape of the pattern cell, and the orientation of those shapes, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

Ordered droplet formation by thin polymer film dewetting on a stripe-patterned substrate

The dewetting process of thin polystyrene (PS) film on flat and stripe-patterned substrates is presented. Different dewetting processes were observed when the thin PS films annealed at above the glass transition temperature on these different kinds of substrates. The final dewetting on the flat substrate led to formation of polygonal liquid droplets, while on the stripe-patterned substrate, the droplets were observed to align at the centers of the stripes. A possible explanation for the dewetting process on the stripe-patterned substrate is proposed.

Selective growth of InAs islands on patterned GaAs (100) substrate

By a combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid-source molecular beam epitaxy. It is found that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate or molecular beam epitaxy growth conditions. When a InxGa(1-x)As strained layer is grown first before InAs deposition, almost all the InAs quantum dots are deposited at the edges of the top ridge. And when the InAs deposition amount is larger, a quasi-quantum wire structure is found. The optical properties of the InAs dots on the patterned substrate are also investigated by photoluminescence. (c) 2005 Elsevier Ltd. All rights reserved.

Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate

By combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid soul-cc molecular beam epitaxy. Four [011] stripe-patterned substrates different in pitch, depth, and sidewall angle, respectively, are used in this work. The surface morphology obtained by atomic force microscopy shows that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate. The mechanism determining the nucleation position of the InAs dots is discussed. The optical properties of the InAs dots on the patterned substrates are also investigated by photo luminescence. (c) 2005 Elsevier B.V. All rights reserved.

Improvement of photoluminescence of strained SiGe/Si layers on patterned Si substrate

A strained SiGe/Si superlattice structure has been grown on a patterned Si substrate and its photoluminescence has been studied. The patterned substrate is composed of pyramid-like structures. It is found that there are Ge-rich SiGe quantum wires (QWR) at the crossings of adjacent planes that form the pyramid-like structure. Photoluminescence of strained the SiGe layer grown on a planar substrate and a patterned substrate was compared. The total intensity of photoluminescence from the patterned substrate was 5.2 times larger than that from the planar substrates. The result is discussed and it is believed that this increase in photoluminescence is related to the observed QWRs. (C) 1999 Elsevier Science Ltd. All rights reserved.

Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107

An effective approach to enhance the light output power of InGaN/GaN light emitting diodes (LED) was proposed using pyramidal patterned sapphire substrates (PSS). The sapphire substrates were patterned by a selective chemical wet etching technique. GaN-based LEDs were fabricated on patterned sapphire substrates through metal organic chemical deposition (MOCVD). The LEDs fabricated on patterned sapphire substrates exhibit excellent device performance compared to the conventional LEDs fabricated on planar sapphire substrates in the case of the same growth and device fabricating conditions. The light output power of the LEDs fabricated on patterned sapphire substrates was about 37% higher than that of LEDs on planar sapphire substrates at an injection current of 20 mA. The significant enhancement is attributable to the improvement of the quality of GaN-based epilayers and improvement of the light extraction efficiency by patterned sapphire substrates.

Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-nitride nanodetectors, white light emitters, and solar cells

III-nitride nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitride nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow with high order on pre-defined sites on a pre-patterned substrate

Carrier channels of multimodal-sized quantum dots: A surface-mediated adatom migration picture

This paper focuses on the study of carrier channels of multimodal-sized quantum dots formed on patterned substrate by a rate-equation-based model. Surface-mediated indium adatom migration is revealed by a direct comparison between quantum dot wetting layer, which acts as carrier channel, formed on a flat substrate and on a patterned substrate. For the assessment of suitability, the carrier channel of the dot-in-well structure has also been studied by the present model, and the transition energies of the carrier channel (e.g., InGaAs quantum well) obtained from theoretical simulation agree fairly well with those obtained from the reflectance measurements.

Molecular weight effects on the phase morphology of PS/P4VP blend films on homogeneous SAM and heterogeneous SAM/Au substrates

The effects of the molecular weight of polystyrene (PS) component on the phase separation of PS/poly(4-vinylpyridine) (PS/P4VP) blend films on homogeneous alkanethiol self-assembled monolayer (SAM) and heterogeneous SAM/Au substrates have been investigated by means of atomic force microscopy (AFM). For the PS (22.4k)/P4VP (60k) system, owing to the molecular weight of PS component is relatively small, the well-aligned PS and P4VP stripes with good thermal stability are directed by the patterned SAM/Au surfaces. With the increase of the molecular weight of PS component (for the PS (582k)/P4VP (60k) system), the diffusion of P4VP is hindered by the high viscosity of PS during the fast spin-coating process. The phase separation behavior of PS/P4VP on the SAM/Au patterned substrates is similar to that on the homoueneous SAM and cannot be easily directed by the patterned SAM surfaces even though the characteristic length of the lateral domain morphology is commensurate with the stripe width.

Influence of Er,Cr : YSGG laser treatment on the microtensile bond strength of adhesives to dentin

Purpose: In light of the concept of minimally invasive dentistry, erbium lasers have been considered as an alternative technique to the use of diamond burs for cavity preparation. The purpose of this study was to assess the bonding effectiveness of adhesives to Er,Cr:YSGG laser-irradiated dentin using irradiation settings specific for cavity preparation. Materials and Methods: Fifty-four midcoronal dentin surfaces, obtained from sound human molars, were irradiated with an Er,Cr:YSGG laser or prepared with a diamond bur using a high-speed turbine. One etch-and-rinse (Optibond FL/Kerr) and three self-etching adhesives (Adper Prompt L-Pop/3M ESPE, Clearfil SE Bond/Kuraray, and Clearfil S-3 Bond/Kuraray) were used to bond the composite to dentin. The microtensile bond strength (mu TBS) was determined after 24 h of storage in water at 37 degrees C. The Kruskal-Wallis test was used to determine pairwise statistical differences (p < 0.05). Prepared dentin surfaces, adhesive interfaces, and failure patterns were analyzed using a stereo microscope and Field-emission gun Scanning Electron Microscopy (Feg-SEM). Results: Significantly lower mu TBS was observed to laser-irradiated than to bur-cut dentin (p < 0.05), irrespective of the adhesive employed. Feg-SEM photomicrographs of lased dentin revealed an imbricate patterned substrate and the presence of microcracks at the dentin surface. Conclusion: Morphological alterations produced by Er,Cr:YSGG laser-irradiation adversely influence the bonding effectiveness of adhesives to dentin. Keywords: dentin, adhesion, adhesives, laser, ErCr:YSGG.