Intensity-modulating characteristics of a laser diode subjected to optical injection

We have found that the optical power of a laser diode (LD) does not change with the injected light intensity that is modulated when its injection current is at some specific values. The amplitude of optical power change of the LD varies periodically with the increase of the injection current. It is made clear through theoretical analysis that these phenomena are caused by gain compression and interband carrier absorption of the LD that depend on longitudinal mode competition, bandgap-shrinkage effects, thermal conduction, and so on. Our experimental results make it easy to eliminate optical power change of LDs. We only need to choose a proper value of the injection current. (c) 2005 Optical Society of America.

Microwave generation in an electro-absorption modulator integrated with a DFB laser subject to optical injection

This paper presents a new technique to generate microwave signal using an electro-absorption modulator (EAM) integrated with a distributed feedback (DFB) laser subject to optical injection. Experiments show that the frequency of the generated microwave can be tuned by changing the wavelength of the external laser or adjusting the bias voltage of the EAM. The frequency response of the EAM is studied and found to be unsmooth due to packaging parasitic effects and four-wave mixing effect occurring in the active layer of the DFB laser. It is also demonstrated that an EA modulator integrated in between two DFB lasers can be used instead of the EML under optical injection. This integrated chip can be used to realize a monolithically integrated tunable microwave source. (C) 2009 Optical Society of America

Harmonic Millimeter Wave Generation and Frequency Up-Conversion Using Optical Injection Locking and Brillouin Selective Sideband Amplification

Harmonic millimeter wave (mm-wave) generation and frequency up-conversion are experimentally demonstrated using optical injection locking and Brillouin selective sideband amplification (BSSA) induced by stimulated Brillouin scattering in a 10-km single-mode fiber. By using this method, we successfully generate third-harmonic mm-wave at 27 GHz (f(LO) - 9 GHz) with single sideband (SSB) modulation and up-convert the 2GHz intermediate frequency signal into the mm-wave band with single mode modulation of the SSB modes. In addition, the mm-wave carrier obtains more than 23 dB power gain due to the BSSA. The transmission experiments show that the generated mm-wave and up-converted signals indicate strong immunity against the chromatic dispersion of the fibers.

High-frequency signal generation using 1550 nm VCSEL subject to two-frequency optical injection

We experimentally investigate high-frequency microwave signal generation using a 1550 nm single-mode VCSEL subject to two-frequency optical injection. We first consider a situation in which the injected signals come from two similar VCSELs. The polarization of the injected light is parallel to that of the injected VCSEL. We obtain that the VCSEL can be locked to one of the injected signals, but the observed microwave signal is originated by beating at the photodetector. In a second situation we consider injected signals that come from two external cavity tunable lasers with a significant increase of the injected power with respect to the VCSEL-by-VCSEL injection case. The polarization of the injected light is orthogonal to that of the free-running slave VCSEL. We show that in this case it is possible to generate a microwave signal inside the VCSEL cavity. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Stabilization of a passively mode-locked laser by continuous wave optical injection

We investigate numerically and experimentally the properties of a passively mode locked quantum dot semiconductor laser under the influence of cw optical injection. We demonstrate that the waveform instability at high pumping for these devices can be overcome when one mode of the device is locked to the injected master laser and additionally show spectral narrowing and tunability. Experimental and numerical analyses demonstrate that the stable locking boundaries are similar to these obtained for optical injection in CW lasers. © 2010 American Institute of Physics.

Quantum-dot mode-locked lasers with dual-mode optical injection

Quantum-dot mode-locked lasers are injection-locked by coherent two-tone master sources. Spectral tuning, significantly improved time-bandwidth product, and low jitter are demonstrated without deterioration of the pulse properties.

Dynamics of quantum-dot mode-locked lasers with optical injection

We present the dynamics of quantum-dot passively mode-locked semiconductor lasers under optical injection. We discuss the benefits of various configurations of the master source including single, dual, and multiple coherent frequency sources. In particular, we demonstrate that optical injection can improve the properties of the slave laser in terms of time-bandwidth product, optical linewidth, and timing jitter.

Mode-locked semiconductor lasers with optical injection

We perform characterization of the pulse shape and noise properties of quantum dot passively mode-locked lasers (PMLLs). We propose a novel method to determine the RF linewidth and timing jitter, applicable to high repetition rate PMLLs, through the dependence of modal linewidth on the mode number. Complex electric field measurements show asymmetric pulses with parabolic phase close to threshold, with the appearance of waveform instabilities at higher currents. We demonstrate that the waveform instabilities can be overcome through optical injection-locking to the continues wave (CW) master laser, leading to time-bandwidth product (TBP) improvement, spectral narrowing, and spectral tunability. We discuss the benefits of single- and dual-tone master sources and demonstrate that dual-tone optical injection can additionally improve the noise properties of the slave laser with RF linewidth reduction below instrument limits (1 kHz) and integrated timing jitter values below 300 fs. Dual-tone injection allowed slave laser repetition rate control over a 25 MHz range with reduction of all modal optical linewidths to the master source linewidth, demonstrating phase-locking of all slave modes and coherence improvement.

Mode-locked semiconductor lasers with optical injection

We perform characterization of the pulse shape and noise properties of quantum dot passively mode-locked lasers (PMLLs). We propose a novel method to determine the RF linewidth and timing jitter, applicable to high repetition rate PMLLs, through the dependence of modal linewidth on the mode number. Complex electric field measurements show asymmetric pulses with parabolic phase close to threshold, with the appearance of waveform instabilities at higher currents. We demonstrate that the waveform instabilities can be overcome through optical injection-locking to the continues wave (CW) master laser, leading to time-bandwidth product (TBP) improvement, spectral narrowing, and spectral tunability. We discuss the benefits of single- and dual-tone master sources and demonstrate that dual-tone optical injection can additionally improve the noise properties of the slave laser with RF linewidth reduction below instrument limits (1 kHz) and integrated timing jitter values below 300 fs. Dual-tone injection allowed slave laser repetition rate control over a 25 MHz range with reduction of all modal optical linewidths to the master source linewidth, demonstrating phase-locking of all slave modes and coherence improvement.

Quantum-dot mode-locked lasers with dual-mode optical injection

Quantum-dot mode-locked lasers are injection-locked by coherent two-tone master sources. Spectral tuning, significantly improved time-bandwidth product, and low jitter are demonstrated without deterioration of the pulse properties.

Stabilization of a passively mode-locked laser by continuous wave optical injection

We investigate numerically and experimentally the properties of a passively mode locked quantum dot semiconductor laser under the influence of cw optical injection. We demonstrate that the waveform instability at high pumping for these devices can be overcome when one mode of the device is locked to the injected master laser and additionally show spectral narrowing and tunability. Experimental and numerical analyses demonstrate that the stable locking boundaries are similar to these obtained for optical injection in CW lasers. © 2010 American Institute of Physics.

Phase synchronization of a two-channel phase-sensitive amplifier based on optical injection-locking of InP quantum-dash mode-locked lasers

A synchronization scheme for a two-channel phase sensitive amplifier is implemented based on the injection-locking of single InP quantum-dash mode-locked laser. Error free performance with penalty <1 dB is demonstrated for both channels. © 2011 Optical Society of America.

Optical injection-locking-based pump recovery for phase-sensitively amplified links

An injection-locking-based pump recovery system for phase-sensitively amplified links is proposed and studied experimentally. Measurements with 10 Gbaud DQPSK signals show penalty-free recovery of 0.8 GHz FWHM bandwidth pump with 63 dB overall amplification. © 2012 OSA.

Dynamics of quantum-dot mode-locked lasers with optical injection

We present the dynamics of quantum-dot passively mode-locked semiconductor lasers under optical injection. We discuss the benefits of various configurations of the master source including single, dual, and multiple coherent frequency sources. In particular, we demonstrate that optical injection can improve the properties of the slave laser in terms of time-bandwidth product, optical linewidth, and timing jitter.

Measurement of Electron Spin Lifetime and Optical Orientation Efficiency in Germanium Using Electrical Detection of Radio Frequency Modulated Spin Polarization

We propose and demonstrate a technique for electrical detection of polarized spins in semiconductors in zero applied magnetic fields. Spin polarization is generated by optical injection using circularly polarized light which is modulated rapidly using an electro-optic cell. The modulated spin polarization generates a weak time-varying magnetic field which is detected by a sensitive radio-frequency coil. Using a calibrated pickup coil and amplification electronics, clear signals were obtained for bulk GaAs and Ge samples from which an optical spin orientation efficiency of 4.8% could be determined for Ge at 1342 nm excitation wavelength. In the presence of a small external magnetic field, the signal decayed according to the Hanle effect, from which a spin lifetime of 4.6 +/- 1.0 ns for electrons in bulk Ge at 127 K was extracted.