热键合制作Yb：Y3Al5O12／Y3Al5O12复合晶体

采用热键合技术制备了Yb：Y3Al5O12／Y3Al5O12（Yb：YAG／YAG）复合晶体，对复合晶体进行了结构表征和键合质量检测，利用光学显微镜和扫描电镜观察了复合晶体横截面的形貌；在偏光显微镜下观察键合区域的应力，利用干涉条纹来表征复合晶体的光学均匀性；通过红外透过光谱的测量来检测复合晶体的键合质量．实验结果表明：热键合技术制备的Yb：YAG／YAG复合晶体键合界面处无界面缺陷，不存在复合界面空间过渡层，光学均匀性良好．

Dielectric function and optical conductivity of TiOx (0.8

Reflection electron energy-loss spectra are reported for the family of compounds TiOx over the entire homogeneity range (0.8 < a: < 1.3). The spectra exhibit a plasmon feature on the low-energy side, while several interband transitions are prominent at higher energies. The real and imaginary parts of dielectric functions and optical conductivity for these compounds are determined using the Kramers-Kronig analysis. The results exhibit systematic behavior with varying oxygen stoichiometry.

Growth, characterization and optical quality of CaF2 single crystals grown by the temperature gradient technique

The CaF2 single crystals with diameters up to 200 mm were successfully grown by modified temperature gradient technique (TGT), which are suitable for application as optical elements in the ultraviolet range. The optimizations of various growth parameters were systematically studied. Properties of as-grown CaF2 crystals were characterized by the nature of inclusions, dislocations, crystallinity, and impurities contents. The results showed that the dislocations and multinucleation were mostly constrained in the conical part of the crystals with the cylindrical parts having the best crystalline quality and lowest impurity contents. The high optical quality of TGT-grown CaF2 single crystals was also confirmed to have excellent optical transmission in 190-2500 nm and refractive index homogeneity. (c) 2005 Elsevier Ltd. All rights reserved.

Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots

The structure and optical properties of In(Ga)As with the introduction of InGaAlAs or InAlAs seed dot layers are investigated. The area density and size homogeneity of the upper InGaAs dots are efficiently improved by the introduction of a buried layer of high-density dots. Our explanation for the realization of high density and size homogeneity dots is presented. When the GaAs spacer layer is too thin to cover the seed dots, the upper dots exhibit some optical properties like those of a quantum well. By analyzing the growth dynamics, we refer to this kind of dot as an empty-core dot. (C) 2003 American Institute of Physics.

Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer

The structure and optical properties of In(Ga)As grown with the introduction of InGaAlAs or InAlAs seed dots layers are investigated. The area density and size homogeneity of the upper InGaAs dots are efficiently improved with the introduction of a layer of high-density buried dots. When the GaAs spacer layer is too thin to cover the seed dots, the upper dots exhibit the characterization of a quantum well. By analyzing the growth dynamics, we refer to it as an empty-core structure dot. (C) 2002 Elsevier Science B.V. All rights reserved.

Multiform oxide optical materials via the versatile Pechini-type sol-gel process: Synthesis and characteristics

This feature article highlights work from the authors' laboratories on the various kinds of oxide optical materials, mainly luminescence and pigment materials with different forms (powder, core-shell structures, thin film and patterning) prepared by the Pechini-type sol-gel (PSG) process. The PSG process, which uses the common metal salts (nitrates, acetates, chlorides, etc.) as precursors and citric acid (CA) as chelating ligands of metal ions and polyhydroxy alcohol (such as ethylene glycol or poly ethylene glycol) as a cross-linking agent to form a polymeric resin on molecular level, reduces segregation of particular metal ions and ensures compositional homogeneity. This process can overcome most of the difficulties and disadvantages that frequently occur in the alkoxides based sol-gel process.

Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells

The semiconductor alloy indium gallium nitride (InxGa1-xN) offers substantial potential in the development of high-efficiency multi-junction photovoltaic devices due to its wide range of direct band gaps, strong absorption and other optoelectronic properties. This work uses a variety of characterization techniques to examine the properties of InxGa1-xN thin films deposited in a range of compositions by a novel plasma-enhanced evaporation deposition system. Due to the high vapour pressure and low dissociation temperature of indium, the indium incorporation and, ultimately, control of the InxGa1-xN composition was found to be influenced to a greater degree by deposition temperature than variations in the In:Ga source rates in the investigated region of deposition condition space. Under specific deposition conditions, crystalline films were grown in an advantageous nano-columnar microstructure with deposition temperature influencing column size and density. The InxGa1-xN films were determined to have very strong absorption coefficients with band gaps indirectly related to indium content. However, the films also suffer from compositional inhomogeneity and In-related defect complexes with strong phonon coupling that dominates the emission mechanism. This, in addition to the presence of metal impurities, harms the alloy’s electronic properties as no significant photoresponse was observed. This research has demonstrated the material properties that make the InxGa1-xN alloy attractive for multi-junction solar cells and the benefits/drawbacks of the plasma-enhanced evaporation deposition system. Future work is needed to overcome significant challenges relating to crystalline quality, compositional homogeneity and the optoelectronic properties of In-rich InxGa1-xN films in order to develop high-performance photovoltaic devices.

Determination of the degree of dissociation in an inductively coupled hydrogen plasma using optical emission spectroscopy and laser diagnostics

Gas temperature is of major importance in plasma based surface treatment, since the surface processes are strongly temperature sensitive. The spatial distribution of reactive species responsible for surface modification is also influenced by the gas temperature. Industrial applications of RF plasma reactors require a high degree of homogeneity of the plasma in contact with the substrate. Reliable measurements of spatially resolved gas temperatures are, therefore, of great importance. The gas temperature can be obtained, e.g. by optical emission spectroscopy (OES). Common methods of OES to obtain gas temperatures from analysis of rotational distributions in excited states do not include the population dynamics influenced by cascading processes from higher electronic states. A model was developed to evaluate this effect on the apparent rotational temperature that is observed. Phase resolved OES confirmed the validity of this model. It was found that cascading leads to higher apparent temperatures, but the deviation (~25 K) is relatively small and can be ignored in most cases. This analysis is applied to investigate axially and radially resolved temperature profiles in an inductively coupled hydrogen RF discharge.

Investigation of the temperature homogeneity of die melt flows in polymer extrusion

Polymer extrusion is fundamental to the processing of polymeric materials and melt flow temperature homogeneity is a major factor which influences product quality. Undesirable thermal conditions can cause problems such as melt degradation, dimensional instability, weaknesses in mechanical/optical/geometrical properties, and so forth. It has been revealed that melt temperature varies with time and with radial position across the die. However, the majority of polymer processes use only single-point techniques whose thermal measurements are limited to the single point at which they are fixed. Therefore, it is impossible for such techniques to determine thermal homogeneity across the melt flow. In this work, an extensive investigation was carried out into melt flow thermal behavior of the output of a single extruder with different polymers and screw geometries over a wide range of processing conditions. Melt temperature profiles of the process output were observed using a thermocouple mesh placed in the flow and results confirmed that the melt flow thermal behavior is different at different radial positions. The uniformity of temperature across the melt flow deteriorated considerably with increase in screw rotational speed while it was also shown to be dependent on process settings, screw geometry, and material properties. Moreover, it appears that the effects of the material, machine, and process settings on the quantity and quality of the process output are heavily coupled with each other and this may cause the process to be difficult to predict and variable in nature

Preparation, structural and optical characterization of BaWO4 and PbWO4 thin films prepared by a chemical route

Polycrystalline BaWO4 and PbWO4 thin films having a tetragonal scheelite structure were prepared at different temperatures. Soluble precursors such as barium carbonate, lead acetate trihydrate and tungstic acid, as starting materials, were mixed in aqueous solution. The thin films were deposited on silicon, platinum-coated silicon and quartz substrates by means of the spinning technique. The surface morphology and crystal structure of the thin films were investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, and specular reflectance infrared Fourier transform spectroscopy, respectively. Nucleation stages and surface morphology evolution of thin films on silicon substrates have been studied by atomic force microscopy. XRD characterization of these films showed that BaWO4 and PbWO4 phase crystallize at 500 degreesC from an inorganic amorphous phase. FTIR spectra revealed the complete decomposition of the organic ligands at 500 degreesC and the appearance of two sharp and intense bands between 1000 and 600 cm(-1) assigned to vibrations of the antisymmetric stretches resulting from the high crystallinity of both thin films. The optical properties were also studied. It was found that BaWO4 and PbWO4 thin films have Eg = 5.78 eV and 4.20 eV, respectively, of a direct transition nature. The excellent microstructural quality and chemical homogeneity results confirmed that soft solution processing provides an inexpensive and environmentally friendly route for the preparation of BaWO4 and PbWO4 thin films. (C) 2003 Elsevier Ltd. All rights reserved.

Microstructural and optical characterization of CaWO4 and SrWO4 thin films prepared by a chemical solution method

Stoichiometric CaWO4 and SrWO4 thin films were synthesized using a chemical solution processing, the so-called polymeric precursor method. In this soft chemical method, soluble precursors such as strontium carbonate, calcium carbonate and tungstic acid, as starting materials, were mixed in an aqueous solution. The thin films were deposited on glass substrates by means of the spinning technique. The surface morphology and crystal structure of the thin films were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Nucleation stages and surface morphology evolution of the thin films on glass substrates were studied by atomic force microscopy. The films nucleate at 300 degreesC, after the coalescence of small nuclei into larger grains yielding a homogeneous dense surface. XRD characterization of these films showed that the CaWO4 and SrWO4 phases crystallize at 400 degreesC from an inorganic amorphous phase. No intermediate crystalline phase was identified. The optical properties were also studied. It was found that CaWO4 and SrWO4 thin films have an optical band gap, E-gap=5.27 and 5.78 eV, respectively, of a direct transition nature. The excellent microstructural quality and chemical homogeneity confirmed that this soft solution processing provides an inexpensive and environmentally friendly route for the preparation of CaWO4 and SrWO4 thin films. (C) 2003 Elsevier B.V. All rights reserved.

Type Ia Supernovae : Homogeneity and Diversity

The use of type Ia supernovae as distance estimators has shown that about 75% of the energy content of the universe has a negative equation of state parameter and thus, drives the acceleration of the universe. Constraining the exact nature of this energy is one of the main goals in cosmology. As the statistics of observed high-redshift supernovae increases, systematic effects become the limiting factor to pursue such investigations, thus deeper understanding of the physical properties of SNe is of great importance. In this thesis we investigate spectral homogeneity and diversity of local and high redshift supernovae. Special emphasis has been given to the analysis of optical spectra of local peculiar supernovae 1999aa and 1999ac. The study of the spectra of SN 1999aa pointed out that this SN could be a link between the extreme peculiar SN 1991T and normal SNe. Moreover, the identification of a high velocity component of Ca II and possibly of a low velocity component of C III suggests some degree of asphericity in the ejecta of this supernova. Evidence for a deflagration of a C+O white dwarf was found in the early spectra of SN 1999ac. The spectral proprieties of a vast sample of local SNe are also studied by means of newly introduced spectral indicators. These were used to possibly improve the intrinsic spread of SN peak magnitudes to 0.15 mag, independently of light curve parameters. The first quantitative comparison between local and high redshift supernova is carried out. No evidence for extreme peculiar sub-luminous SNe was found in our data set including 13 SNe with redshift range z=0.279-0.912. Furthermore, SN2002fd (z=0.279) was found to show spectral characteristics similar to SN 1991T/SN 1999aa-like supernovae. We also present a feasibility study of the Hubble diagram in rest frame I-band up to z~0.5, and show the possibility to probe the presence of intergalactic dust, which could possibly mimic the effect of dark energy in the Hubble diagram.

Characterization of microfluidic systems with Doppler optical coherence tomography

Doppler Optical Coherence Tomography (DOCT) is a biomedical imaging technique that allows simultaneous structural imaging and flow monitoring inside biological tissues and materials with spatial resolution in the micrometer scale. It has recently been applied to the characterization of microfluidic systems. Structural and flow imaging of novel microfluidics platforms for cytotoxicologic applications were obtained with a real-time, Near Infrared Spectral Domain DOCT system. Characteristics such as flow homogeneity in the chamber, which is one of the most important parameters for cell culture, are investigated. OCT and DOCT images were used to monitor flow inside a specific platform that is based on microchannel division for a better flow homogeneity. In particular, the evolution of flow profile at the transition between the microchannel structure and the chamber is studied.

Aerosol total mass concentration and optical depth during IPY 2007-2008 at Maitri and Larsemann Hills Station

The properties of background aerosols and their dependence on meteorological, geographical and human influence are examined using measured spectral aerosol optical depth (AOD), total mass concentration (Mt) and derived number size distribution (NSD) over two distinct coastal locations of Antarctica; Maitri (70°S, 12°E, 123 m m.s.l.) and Larsemann Hills (LH; 69°S, 77°E, 48 m m.s.l.) during southern hemispheric summer of 2007-2008 as a part of the 27th Indian Scientific Expedition to Antarctica (ISEA) during International Polar Year (IPY). Our investigations showed comparable values for the mean columnar AOD at 500 nm over Maitri (0.034±0.005) and LH (0.032±0.006) indicating good spatial homogeneity in the columnar aerosol properties over the coastal Antarctica. Estimation of Angstrom exponent a showed accumulation mode dominance at Maitri (alpha ~1.2±0.3) and coarse mode dominance at LH (0.7±0.2). On the other hand, mass concentration (M(T)) of ambient aerosols showed relatively high values (~8.25±2.87 µg/m**3) at Maitri in comparison to LH (6.03±1.33 µg/m**3).

Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 µm with low optical degradation

Low optical degradation in GaInAsN(Sb)/GaAs quantum dots (QDs) p–i–n structures emitting up to 1.55 μm is presented in this paper. We obtain emission at different energies by means of varying N content from 1 to 4%. The samples show a low photoluminescence (PL) intensity degradation of only 1 order of magnitude when they are compared with pure InGaAs QD structures, even for an emission wavelength as large as 1.55 μm. The optimization studies of these structures for emission at 1.55 μm are reported in this work. High surface density and homogeneity in the QD layers are achieved for 50% In content by rapid decrease in the growth temperature after the formation of the nanostructures. Besides, the effect of N and Sb incorporation in the redshift and PL intensity of the samples is studied by post-growth rapid thermal annealing treatments. As a general conclusion, we observe that the addition of Sb to QD with low N mole fraction is more efficient to reach 1.55 μm and high PL intensity than using high N incorporation in the QD. Also, the growth temperature is determined to be an important parameter to obtain good emission characteristics. Finally, we report room temperature PL emission of InGaAsN(Sb)/GaAs at 1.4 μm.