Correlation of emitted electrons in near threshold double ionization of helium by electron impact

We have performed an experiment on near threshold double ionization of helium by 106 eV electron impact with an improved reaction microscope. In this experiment the momenta of three particles after ionization were measured, and the information on correlation of emitted electrons was obtained. Detailed descriptions of the experimental setup and the methods of reconstruction of electron momentum were given. We focused on the analysis of momentum and energy distributions and the angular correlation of the emitted electrons. The experimental results were compared with Wannier's prediction, and it was found that the experimental results showed some characteristic features predicted by Wannier theory.

Restoration of the signals from multi-hit three-layer delay-line anode position-sensitive detector

Multi-hit 3-layer delay-line anode (Hexanode) has an increased ability to detect multi-hit events in a collision experiment. Coupled with a pair of micro-channel plates, it can provide position information of the particles even if the particles arrive at the same time or within small time dwell. But it suffers from some ambiguous outputs and signal losses due to timing order and triggering thresholds etc. We have developed a signal reconstruction program to correct those events. After the program correction, the dead time only exists when 2 paxticles arrive at the same time and the same position within a much smaller range. With the combination of Hexanode and the program, the experimental efficiencies will be greatly improved in near threshold double ionization on He collisions.

Semiclassical-quantal approach to the near-threshold ionization of hydrogen

A recent improved version of the semiclassical-quantal approach has been applied to the e(-)-H near-threshold ionization for theta (12) = 180 degrees geometry. It is found, that unlike other sophisticated theoretical methods such as distorted wave theory or convergent close-coupling calculation, the present relatively simpler approach produces correct behavior and numerical values for the triple-differential cross sections. We compare our results with recent absolute measurements and accurate numerical calculations at 2 eV and 4 eV above the threshold at constant theta (12) geometry.

Double-Electron Above-Threshold Ionization Resonances as Interference Phenomena

We report calculations of double ionization energy spectra and momentum distributions of laser-driven helium due to few-cycle pulses of wavelength 195 nm. The results are obtained from full-dimensional numerical integration of the two electron time-dependent Schr¨odinger equation. A momentum-space analysis of doubly ionizing wavepackets shows that the concentric-ring structure of above-threshold double ionization, together with the associated structure of peaks in the total kinetic energy spectrum, may be attributed to wavepacket interference effects, where at least two doubly-ionizing wavepackets from different recollision events populate the same spatial hemisphere.

Hidden sector effects on double Higgs production near threshold at the LHC

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Emission characteristics of three final continuum electrons produced in low-energy double ionization of helium

The double ionization of helium by electron impact for 106 eV incident energy was studied in a kinematically complete experiment by using a reaction microscope. The pattern of the angular correlation of the three emitted electrons was analyzed by selecting different values of the recoil ion longitudinal momentum. The Wannier predicted geometry appears when the recoil ion carries the full initial projectile momentum. It was found that at this low impact energy, the outgoing electrons still remember the initial-state collision information.

High-energy cutoff in the spectrum of strong-field nonsequential double ionization

Electron energy distributions of singly and doubly ionized helium in an intense 390 nm laser field have been measured at two intensities (0.8 PW/cm(2) and 1.1 PW/cm(2), where PW equivalent to 10(15) W/cm(2)). Numerical solutions of the full-dimensional time-dependent helium Schrodinger equation show excellent agreement with the experimental measurements. The high-energy portion of the two-electron energy distributions reveals an unexpected 5U(p) cutoff for the double ionization (DI) process and leads to a proposed model for DI below the quasiclassical threshold.

Sequential versus non-sequential double ionization in strong laser fields

<p> The recollision model has been applied to separate the probability for double ionization into contributions from electron-impact ionization and electron-impact excitation for intensities at which the dielectronic interaction is important for generating double ionization. For a wavelength of 780 am, electron-impact excitation dominates just above the threshold intensity for double ionization, approximate to 1.2 x 10(14) W cm(-2), with electron-impact ionization becoming more important for higher intensities. For a wavelength of 390 nm, the ratio between electron-impact ionization and electron-impact excitation remains fairly constant for all intensities above the threshold intensity for double ionization, approximate to 6 x 10(14) W cm(-2). The results point to an explanation of the experimental results, but more detailed calculations on the behaviour of excited He+ ions are required.</p>

Contribution of near threshold states to recombination in plasmas

Resonance states in atoms or ions at low energies can control the rates of important plasma processes (e.g., dielectronic recombination). We examine the role of states at negative energies just below the ionization threshold of the recombined system and find that they can contribute as much, or more, to recombination as positive energy states. In plasmas, negative energy states can be populated by three body recombination, photorecombination, or continuum lowering. Properly including these negative energy states in a theoretical treatment of plasma processes can change the thermally averaged rate coefficients and, in some cases, removes much of the sensitivity to the energy of a state.

Effects of tempered structure on the near threshold fatigue crack growth behavior of a coarse grained high strength steel

Near threshold fatigue crack growth behavior of a high strength steel under different temper levels was investigated. It is found that the observed variations in ΔKth could predominantly be attributed to roughness induced crack closure. The closure-free component of the threshold stress intensity range, ΔKeff,th showed a systematic variation with monotonic yield strength.

Near-threshold fatigue crack growth in bulk metallic glass composites

A major drawback in using bulk metallic glasses (BMGs) as structural materials is their extremely poor fatigue performance. One way to alleviate this problem is through the composite route, in which second phases are introduced into the glass to arrest crack growth. In this paper, the fatigue crack growth behavior of in situ reinforced BMGs with crystalline dendrites, which are tailored to impart significant ductility and toughness to the BMG, was investigated. Three composites, all with equal volume fraction of dendrite phases, were examined to assess the influence of chemical composition on the near-threshold fatigue crack growth characteristics. While the ductility is enhanced at the cost of yield strength vis-a-vis that of the fully amorphous BMG, the threshold stress intensity factor range for fatigue crack initiation in composites was found to be enhanced by more than 100%. Crack blunting and trapping by the dendritic phases and constraining of the shear bands within the interdendritic regions are the micromechanisms responsible for this enhanced fatigue crack growth resistance.

Tendency toward crossover of the effective susceptibility exponent from its doubled Ising value to its doubled mean-field value near a double critical point

The critical behavior of osmotic susceptibility in an aqueous electrolyte mixture 1-propanol (1P)+water (W)+potassium chloride is reported. This mixture exhibits re-entrant phase transitions and has a nearly parabolic critical line with its apex representing a double critical point (DCP). The behavior of the susceptibility exponent is deduced from static light-scattering measurements, on approaching the lower critical solution temperatures (TL’s) along different experimental paths (by varying t) in the one-phase region. The light-scattering data analysis substantiates the existence of a nonmonotonic crossover behavior of the susceptibility exponent in this mixture. For the TL far away from the DCP, the effective susceptibility exponent γeff as a function of t displays a nonmonotonic crossover from its single limit three-dimensional (3D)-Ising value ( ∼ 1.24) toward its mean-field value with increase in t. While for that closest to the DCP, γeff displays a sharp, nonmonotonic crossover from its nearly doubled 3D-Ising value toward its nearly doubled mean-field value with increase in t. The renormalized Ising regime extends over a relatively larger t range for the TL closest to the DCP, and a trend toward shrinkage in the renormalized Ising regime is observed as TL shifts away from the DCP. Nevertheless, the crossover to the mean-field limit extends well beyond t>10−2 for the TL’s studied. The observed crossover behavior is attributed to the presence of strong ion-induced clustering in this mixture, as revealed by various structure probing techniques. As far as the critical behavior in complex or associating mixtures with special critical points (like the DCP) is concerned, our results indicate that the influence of the DCP on the critical behavior must be taken into account not only on the renormalization of the critical exponent but also on the range of the Ising regime, which can shrink with decrease in the influence of the DCP and with the extent of structuring in the system. The utility of the field variable tUL in analyzing re-entrant phase transitions is demonstrated. The effective susceptibility exponent as a function of tUL displays a nonmonotonic crossover from its asymptotic 3D-Ising value toward a value slightly lower than its nonasymptotic mean-field value of 1. This behavior in the nonasymptotic, high tUL region is interpreted in terms of the possibility of a nonmonotonic crossover to the mean-field value from lower values, as foreseen earlier in micellar systems.

Evidence for a Narrow Near-Threshold Structure in the J/ψϕ Mass Spectrum in B+→J/ψϕK+ Decays

Evidence is reported for a narrow structure near the $J/\psi\phi$ threshold in exclusive $B^+\to J/\psi\phi K^+$ decays produced in $\bar{p} p $ collisions at $\sqrt{s}=1.96 \TeV$. A signal of $14\pm5$ events, with statistical significance in excess of 3.8 standard deviations, is observed in a data sample corresponding to an integrated luminosity of $2.7 \ifb$, collected by the CDF II detector. The mass and natural width of the structure are measured to be $4143.0\pm2.9(\mathrm{stat})\pm1.2(\mathrm{syst}) \MeVcc$ and $11.7^{+8.3}_{-5.0}(\mathrm{stat})\pm3.7(\mathrm{syst}) \MeVcc$.

Robust near-threshold QDI circuit analysis and design

The two most important digital-system design goals today are to reduce power consumption and to increase reliability. Reductions in power consumption improve battery life in the mobile space and reductions in energy lower operating costs in the datacenter. Increased robustness and reliability shorten down time, improve yield, and are invaluable in the context of safety-critical systems. While optimizing towards these two goals is important at all design levels, optimizations at the circuit level have the furthest reaching effects; they apply to all digital systems. This dissertation presents a study of robust minimum-energy digital circuit design and analysis. It introduces new device models, metrics, and methods of calculation—all necessary first steps towards building better systems—and demonstrates how to apply these techniques. It analyzes a fabricated chip (a full-custom QDI microcontroller designed at Caltech and taped-out in 40-nm silicon) by calculating the minimum energy operating point and quantifying the chip’s robustness in the face of both timing and functional failures.