Quasimode theory of quantum optical processes in photonic band gap materials

This paper deals with atomic systems coupled to a structured reservoir of quantum EM field modes, with particular relevance to atoms interacting with the field in photonic band gap materials. The case of high Q cavities has been treated elsewhere using Fano diagonalization based on a quasimode approach, showing that the cavity quasimodes are responsible for pseudomodes introduced to treat non-Markovian behaviour. The paper considers a simple model of a photonic band gap case, where the spatially dependent permittivity consists of a constant term plus a small spatially periodic term that leads to a narrow band gap in the spectrum of mode frequencies. Most treatments of photonic band gap materials are based on the true modes, obtained numerically by solving the Helmholtz equation for the actual spatially periodic permittivity. Here the field modes are first treated in terms of a simpler quasimode approach, in which the quasimodes are plane waves associated with the constant permittivity term. Couplings between the quasimodes occur owing to the small periodic term in the permittivity, with selection rules for the coupled modes being related to the reciprocal lattice vectors. This produces a field Hamiltonian in quasimode form. A matrix diagonalization method may be applied to relate true mode annihilation operators to those for quasimodes. The atomic transitions are coupled to all the quasimodes, and the true mode atom-EM field coupling constants (one-photon Rabi frequencies) are related to those for the quasimodes and also expressions are obtained for the true mode density. The results for the one-photon Rabi frequencies differ from those assumed in other work. Expressions for atomic decay rates are obtained using the Fermi Golden rule, although these are valid only well away from the band gaps.

Narrow Gap flux-cored arc welding of high strength shipbuilding steels

This thesis is part of the Arctic Materials Technologies Development –project. The research of the thesis was done in cooperation with Arctech Helsinki Shipyard, Lappeenranta University of Technology and Kemppi Oy. Focus of the thesis was to study narrow gap flux-cored arc welding of two high strength steels with three different groove angles of 20°, 10° and 5°. Welding of the 25 mm thick E500 TMCP and 10 mm thick EH36 steels was mechanized and Kemppi WisePenetration and WiseFusion processes were tested with E500 TMCP steel. EH36 steel test pieces were welded without Wise processes. Shielding gases chosen were carbon dioxide and a mixture of argon and carbon dioxide. Welds were tested with non-destructive and destructive testing methods. Radiographic, visual, magnetic particle and liquid penetrant testing proved that welds were free from imperfections. After non-destructive testing, welds were tested with various destructive testing methods. Impact strength, bending, tensile strength and hardess tests proved that mechanized welding and Wise processes produced quality welds with narrower gap. More inconsistent results were achieved with test pieces welded without Wise processes. Impact test results of E500 TMCP exceeded the 50 J limit on weld, set by Russian Maritime Register of Shipping. EH36 impact test results were much closer to the limiting values of 34 J on weld and 47 on HAZ. Hardness values of all test specimens were below the limiting values. Bend testing and tensile testing results fulfilled the the Register requirements. No cracking or failing occurred on bend test specimens and tensile test results exceeded the Register limits of 610 MPa for E500 TMCP and 490 MPa for EH36.

Evaluation of the usability and benefits of twist wire GMAW and FACW narrow gap welding /

"March 1988."

Growth of EuTe islands on SnTe by molecular beam epitaxy

Semiconductor magnetic quantum dots are very promising structures, with novel properties that find multiple applications in spintronic devices. EuTe is a wide gap semiconductor with NaCl structure, and strong magnetic moments S=7/2 at the half filled 4f(7) electronic levels. On the other hand, SnTe is a narrow gap semiconductor with the same crystal structure and 4% lattice mismatch with EuTe. In this work, we investigate the molecular beam epitaxial growth of EuTe on SnTe after the critical thickness for island formation is surpassed, as a previous step to the growth of organized magnetic quantum dots. The topology and strain state of EuTe islands were studied as a function of growth temperature and EuTe nominal layer thickness. Reflection high energy electron diffraction (RHEED) was used in-situ to monitor surface morphology and strain state. RHEED results were complemented and enriched with atomic force microscopy and grazing incidence X-ray diffraction measurements made at the XRD2 beamline of the Brazilian Synchrotron. EuTe islands of increasing height and diameter are obtained when the EuTe nominal thickness increases, with higher aspect ratio for the islands grown at lower temperatures. As the islands grow, a relaxation toward the EuTe bulk lattice parameter was observed. The relaxation process was partially reverted by the growth of the SnTe cap layer, vital to protect the EuTe islands from oxidation. A simple model is outlined to describe the distortions caused by the EuTe islands on the SnTe buffer and cap layers. The SnTe cap layers formed interesting plateau structures with easily controlled wall height, that could find applications as a template for future nanostructures growth. (C) 2010 Elsevier B.V. All rights reserved.

Theoretical investigation of the electronic structure and absorption spectra of carbon cluster nanotubes

Electronic and optical properties of recently discovered single-shell carbon cluster nanotubes are studied through a semiempirical INDOCI method. The calculations are performed within the cluster model and include up to 196 atoms. The trend of the forbidden band gap with the number of carbon atoms (Cn n = 60, 10, 140) for a fixed diameter is analyzed. With increasing n the band gap decreases, as expected. The tubule, with diameter of 7.2Å (as C60-Buckyball) is predicted to be a metal or a narrow-gap semiconductor. The calculated absorption spectra of the clusters show a characteristic strong peak around 40,000 cm-1. Other features of the calculated UV-visible absorption spectra are discussed. © 1994.

Flow and axial dispersion simulation for traveling axisymmetric Taylor vortices

Numerical experiments using a finite difference method were carried out to determine the motion of axisymmetric Taylor vortices for narrow-gap Taylor vortex flow. When a pressure gradient is imposed on the flow the vortices are observed to move with an axial speed of 1.16 +/- 0.005 times the mean axial flow velocity. The method of Brenner was used to calculate the long-time axial spread of material in the flow. For flows where there is no pressure gradient, the axial dispersion scales with the square root of the molecular diffusion, in agreement with the results of Rosen-bluth et al. for high Peclet number dispersion in spatially periodic flows with a roll structure. When a pressure gradient is imposed the dispersion increases by an amount approximately equal to 6.5 x 10(-4) (W) over bar(2)d(2)/D-m, where (W) over bar is the average axial velocity in the annulus, analogous to Taylor dispersion for laminar flow in an empty tube.

Theory of pseudomodes in quantum optical processes

This paper deals with non-Markovian behavior in atomic systems coupled to a structured reservoir of quantum electromagnetic field modes, with particular relevance to atoms interacting with the field in high-Q cavities or photonic band-gap materials. In cases such as the former, we show that the pseudomode theory for single-quantum reservoir excitations can be obtained by applying the Fano diagonalization method to a system in which the atomic transitions are coupled to a discrete set of (cavity) quasimodes, which in turn are coupled to a continuum set of (external) quasimodes with slowly varying coupling constants and continuum mode density. Each pseudomode can be identified with a discrete quasimode, which gives structure to the actual reservoir of true modes via the expressions for the equivalent atom-true mode coupling constants. The quasimode theory enables cases of multiple excitation of the reservoir to now be treated via Markovian master equations for the atom-discrete quasimode system. Applications of the theory to one, two, and many discrete quasimodes are made. For a simple photonic band-gap model, where the reservoir structure is associated with the true mode density rather than the coupling constants, the single quantum excitation case appears to be equivalent to a case with two discrete quasimodes.

Quantum transport phenomena and shallow impurity states in CdSb

This work is dedicated to investigation of the energy spectrum of one of the most anisotropic narrow-gap semiconductors, CdSb. At the beginning of the present studies even the model of its energy band structure was not clear. Measurements of galvanomagnetic effects in wide temperature range (1.6 - 300 K) and in magnetic fields up to 30 T were chosen for clarifying of the energy spectrum in the intentionally undoped CdSb single crystals and doped with shallow impurities (In, Ag). Detection of the Shubnikov - de Haas oscillations allowed estimating the fundamental energy spectrum parameters. The shapes of the Fermi surfaces of electrons (sphere) and holes (ellipsoid), the number of the equivalent extremums for valence band (2) and their positions in the Brillouin zone were determined for the first time in this work. Also anisotropy coefficients, components of the tensor of effective masses of carriers, effective masses of density of states, nonparabolicity of the conduction and valence bands, g-factor and its anisotropy for n- and p-CdSb were estimated for the first time during these studies. All the results obtained are compared with the cyclotron resonance data and the corresponding theoretical calculations for p-CdSb. This is basic information for the analyses of the complex transport properties of CdSb and for working out the energy spectrum model of the shallow energy levels of defects and impurities in this semiconductor. It was found out existence of different mechanisms of hopping conductivity in the presence of metal - insulator transition induced by magnetic field in n- and p-CdSb. Quite unusual feature opened in CdSb is that different types of hopping conductivity may take place in the same crystal depending on temperature, magnetic field or even orientation of crystal in magnetic field. Transport properties of undoped p-CdSb samples show that the anisotropy of the resistivity in weak and strong magnetic fields is determined completely by the anisotropy of the effective mass of the holes. Temperature and magnetic field dependence of the Hall coefficient and magnetoresistance is attributed to presence of two groups of holes with different concentrations and mobilities. The analysis demonstrates that below Tcr ~ 20 K and down to ~ 6 - 7 K the low-mobile carriers are itinerant holes with energy E2 ≈ 6 meV. The high-mobile carriers, at all temperatures T < Tcr, are holes activated thermally from a deeper acceptor band to itinerant states of a shallower acceptor band with energy E1 ≈ 3 meV. Analysis of temperature dependences of mobilities confirms the existence of the heavy-hole band or a non-equivalent maximum and two equivalent maxima of the light-hole valence band. Galvanomagnetic effects in n-CdSb reveal the existence of two groups of carriers. These are the electrons of a single minimum in isotropic conduction band and the itinerant electrons of the narrow impurity band, having at low temperatures the energies above the bottom of the conduction band. It is found that above this impurity band exists second impurity band of only localized states and the energy of both impurity bands depend on temperature so that they sink into the band gap when temperature is increased. The bands are splitted by the spin, and in strong magnetic fields the energy difference between them decreases and redistribution of the electrons between the two impurity bands takes place. Mobility of the conduction band carriers demonstrates that scattering in n-CdSb at low temperatures is strongly anisotropic. This is because of domination from scattering on the neutral impurity centers and increasing of the contribution to mobility from scattering by acoustic phonons when temperature increases. Metallic conductivity in zero or weak magnetic field is changed to activated conductivity with increasing of magnetic field. This exhibits a metal-insulator transition (MIT) induced by the magnetic field due to shift of the Fermi level from the interval of extended states to that of the localized states of the electron spectrum near the edge of the conduction band. The Mott variablerange hopping conductivity is observed in the low- and high-field intervals on the insulating side of the MIT. The results yield information about the density of states, the localization radius of the resonant impurity band with completely localized states and about the donor band. In high magnetic fields this band is separated from the conduction band and lies below the resonant impurity bands.

Kehittyneiden hitsausprosessien soveltuvuus alumiinin ja hiiliterästen hitsaukseen

Diplomityössä tutkitaan hitsausprosessien kehitystä. Työn kirjallisen osan alku kuvaa hitsauksen nykypäivää ja tulevaisuutta sekä millainen on hitsaava Suomi. Kehittyneiden hitsausprosessien tarkastelu on jaettu hiiliterästen ja alumiinien hitsausprosesseihin. Hiiliteräksien hitsauksen osalta työssä esitellään kitkahitsaus pyörivällä työkalulla, muunnettu lyhytkaarihitsaus, laserhitsaus, laser-hybridihitsaus ja kapearailohitsaus. Alumiinien hitsauksen osalta työssä esitellään laserhitsaus, muunnettu lyhytkaarihitsaus, kitkahitsaus pyörivällä työkalulla ja vaihtovirta MIG hitsaus. Diplomityön käytännönosuudessa todennettiin hitsausprosessien kehitys. Ensimmäisissä hitsauskokeissa hitsattiin merialumiinia eri kaarityypeillä. Vertailua tehdään pulssihitsauksen, lankapulssihitsauksen sekä CMT-kaarihitsauksen välillä. Koehitsaukset osoittavat CMT-hitsauksen tuottavan MIG-pulssihitsausta pienemmät hitsausmuodonmuutokset. CMT-hitsauksessa alumiinin oksidikerros aiheuttaa MIGpulssihitsausta vähemmän ongelmia, sillä kaari syttyy varmemmin suurillakin hitsausnopeuksilla, eikä hitsiin synny huokosia. Hitsausnopeudella 40 cm/min lankapulssihitsauksella ja MIG-pulssihitsauksella päittäisliitoksena hitsattujen vesileikattujen alumiinikappaleiden hitseihin ei syntynyt huokosia. Kokeen perusteella voidaan todeta, ettei oksidikerroksella ollut vaikutusta hitsin onnistumiseen. Hitsauskokeiden toinen osio tutkii hiilimangaaniteräksisen T-palkin kuitulaserhitsausta. Viiden kilowatin laserteholla hitsattiin onnistuneesti viisi metriä pitkiä T-palkkeja hitsausnopeudella 2 m/min. Takymetrimittauksella ja Tritop 3D-koordinaattimittauksella todennettiin laserhitsatun T-palkin hitsausmuodonmuutosten olevan huomattavasti Twin-jauhekaarihitsauksella hitsattua T-palkkia pienemmät.

Time-Resolved Photoluminescence in Antimonide and Dilute Nitride Quantum Well Structures

This Master's thesis is devoted to semiconductor samples study using time-resolved photoluminescence. This method allows investigating recombination in semiconductor samples in order to develop quality of optoelectronic device. An additional goal was the method accommodation for low-energy-gap materials. The first chapter gives a brief intercourse into the basis of semiconductor physics. The key features of the investigated structures are noted. The usage area of the results covers saturable semiconductor absorber mirrors, disk lasers and vertical-external-cavity surface-emittinglasers. The experiment set-up is described in the second chapter. It is based on up-conversion procedure using a nonlinear crystal and involving the photoluminescent emission and the gate pulses. The limitation of the method was estimated. The first series of studied samples were grown at various temperatures and they suffered rapid thermal annealing. Further, a latticematched and metamorphically grown samples were compared. Time-resolved photoluminescence method was adapted for wavelengths up to 1.5 µm. The results allowed to specify the optimal substrate temperature for MBE process. It was found that the lattice-matched sample and the metamorphically grown sample had similar characteristics.

Kapearailotekniikan käyttö jauhekaarihitsauksessa

Diplomityössä tavoitteena oli tutkia kapearailojauhekaaritekniikan soveltuvuutta konepajakäyttöön ja sen vaikutusta hitsauksen tuottavuuteen sekä hitsin mekaanisiin ominaisuuksiin. Työ tehtiin vertailukokeilla, jossa koehitsaukset suoritettiin eri aineenpaksuuksille siten, että jokaiselle tutkimuksen kohteena olleelle materiaalille tehtiin yksi hitsaus käytössä olevalla jauhekaaritekniikalla, jolloin saatiin vertailukohde, johon uutta kapearailotekniikkaa verrattiin. Tulokset osoittivat, että kapearailotekniikalla 1 palko/palkokerros aineenpaksuudeltaan Pl. 60 mm koekappale saatiin hitsattua n. 39 % nopeammin verrattuna perinteiseen tandem -hitsaukseen. Kyseisellä aineenpaksuudella lisäainelangan kulutus oli n. 41 % ja jauheen kulutus n. 71 % pienempi verrattuna perinteiseen X- railohitsaukseen tandem -menetelmällä. Lisäksi tuli esille, että ”palkoa palonpäälle” -tekniikka on kapearailotekniikoista tehokkain, sillä 2 palkoa/palkokerros menetelmässä railon leveyttä jouduttiin leventämään, jolloin kapearailotekniikan pieni railotilavuus menetettiin. Lisäaineen kulutus tälläkin menetelmällä jäi pienemmäksi verrattuna X- railohitsaukseen. Ennalta pelättyä kuonan irtoamisongelmaa ei kapearailohitsauksessa havaittu, vaan kuona irtosi ongelmitta railon kyljistä. Lisäksi kapearailotekniikalla hitsattujen hitsien lujuudet olivat vertailukelpoiset tandem- ja yksilankamenetelmällä hitsattujen hitsien kanssa.

Tandem-MAG-welding of high strength steels for shipbuilding applications

Tämän työn tavoitteena oli hitsata tandem MAG –laitteistolla 25 mm paksua Ruukin E500 TMCP terästä. Työssä oli tarkoituksena vähentää railotilavuutta mahdollisimman paljon sekä suorittaa testihitsaukset 0.8 kJ/mm sekä 2.5 kJ/mm lämmöntuonneilla. Teoriaosuudessa käsiteltiin Tandem MAG-hitsaukseen, sen tuottavuuteen ja laatukysymyksiin liittyviä asioita sekä siinä perehdyttiin suurlujuusteräksien käyttöön hitsauksessa sekä laivanrakennuksessa. Kokeellisessa osuudessa perehdyttiin hitsauksessa huomattuihin etuihin, ongelmiin sekä ongelmien ratkaisumahdollisuuksiin. Hitsausliitoksen mekaaniset ominaisuudet tutkittiin rikkomattomin sekä rikkovin menetelmin. Alustavat hitsausohjeet luotiin kummallekin lämmöntuonnille. Testaukset aloitettiin 30 º railokulmalla pienentäen kulmaa mahdollisuuksien mukaan. Testauksissa ei saatu hitsattua onnistuneesti alle 30 º railokulmalla. Hitsaustestien aikana huomattiin magneettisen puhalluksen vaikutus hitsaustapahtumaan. Kaasunvirtausnopeuden tuli olla tietyn suuruinen jotta palkokerrokset onnistuivat ilman huokoisuusongelmaa. Pienemmällä lämmöntuonnilla hitsattaessa kaasunvirtausnopeudet olivat tärkeämpiä hitsatessa ylempiä palkokerroksia. Kääntämällä hitsauspoltinta sivuttaissuunnassa 7-10 astetta auttoi ehkäisemään reunahaavan syntymistä. Rikkovista menetelmistä testitulokset olivat hyväksyttyjä kaikkien muiden paitsi päittäishitsin sivutaivutuskokeen osalta.

Nanoscale-electrical and optical properties of iii-nitrides

III-nitrides are wide-band gap materials that have applications in both electronics and optoelectronic devices. Because to their inherent strong polarization properties, thermal stability and higher breakdown voltage in Al(Ga,In)N/GaN heterostructures, they have emerged as strong candidates for high power high frequency transistors. Nonetheless, the use of (Al,In)GaN/GaN in solid state lighting has already proved its success by the commercialization of light-emitting diodes and lasers in blue to UV-range. However, devices based on these heterostructures suffer problems associated to structural defects. This thesis primarily focuses on the nanoscale electrical characterization and the identification of these defects, their physical origin and their effect on the electrical and optical properties of the material. Since, these defects are nano-sized, the thesis deals with the understanding of the results obtained by nano and micro-characterization techniques such as atomic force microscopy(AFM), current-AFM, scanning kelvin probe microscopy (SKPM), electron beam induced current (EBIC) and scanning tunneling microscopy (STM). This allowed us to probe individual defects (dislocations and cracks) and unveil their electrical properties. Taking further advantage of these techniques,conduction mechanism in two-dimensional electron gas heterostructures was well understood and modeled. Secondarily, origin of photoluminescence was deeply investigated. Radiative transition related to confined electrons and photoexcited holes in 2DEG heterostructures was identified and many body effects in nitrides under strong optical excitations were comprehended.

Room temperature photoluminescence of InGaAs Surface Quantum Dots

Self-assembled InGaAs quantum dots show unique physical properties such as three dimensional confinement, high size homogeneity, high density and low number of dislocations. They have been extensively used in the active regions of laser devices for optical communications applications [1]. Therefore, buried quantum dots (BQDs) embedded in wider band gap materials have been normally studied. The wave confinement in all directions and the stress field around the dot affect both optical and electrical properties [2, 3]. However, surface quantum dots (SQDs) are less affected by stress, although their optical and electrical characteristics have a strong dependence on surface fluctuation. Thus, they can play an important role in sensor applications

Contribución a los arrays de antenas activos en microondas = Contribution to active array antennas at microwave bands

Esta tesis que tiene por título "Contribución a los arrays de antenas activos en banda X", ha sido desarrollada por el estudiante de doctorado Gonzalo Expósito Domínguez, ingeniero de telecomunicación en el Grupo de Radiación del Departamento de Señales, Sistemas y Radiocomunicaciones de la ETSI de Telecomunicación de la Universidad Politécnica de Madrid bajo la dirección de los doctores Manuel Sierra Castañer y José Manuel Fernández González. Esta tesis contiene un profundo estudio del arte en materia de antenas activas en el campo de apuntamiento electrónico. Este estudio comprende desde los fundamentos de este tipo de antenas, problemas de operación y limitaciones hasta los sistemas actuales más avanzados. En ella se identifican las partes críticas en el diseño y posteriormente se llevan a la práctica con el diseño, simulación y construcción de un subarray de una antena integrada en el fuselaje de un avión para comunicaciones multimedia por satélite que funciona en banda X. El prototipo consta de una red de distribución multihaz de banda ancha y una antena planar. El objetivo de esta tesis es el de aplicar nuevas técnicas al diseño de antenas de apuntamiento electrónico. Es por eso que las contribuciones originales son la aplicación de barreras electromagnéticas entre elementos radiantes para reducir los acoplamientos mutuos en arrays de exploración electrónica y el diseño de redes desfasadoras sencillas en las que no son necesarios complejos desfasadores para antenas multihaz. Hasta la fecha, las barreras electromagnéticas, Electronic Band Gap (EBG), se construyen en sustratos de permitividad alta con el fin de aumentar el espacio disponible entre elementos radiantes y reducir el tamaño de estas estructuras. Sin embargo, la utilización de sustratos de alta permitividad aumenta la propagación por ondas de superficie y con ellas el acoplo mutuo. Utilizando sustratos multicapa y colocando la vía de las estructuras en su borde, en vez de en su centro, se consigue reducir el tamaño sin necesidad de usar sustratos de alta permitividad, reducir la eficiencia de radiación de la antena o aumentar la propagación por ondas de superficie. La última parte de la tesis se dedica a las redes conmutadoras y desfasadoras para antenas multihaz. El diseño de las redes de distribución para antenas son una parte crítica ya que se comportan como un atenuador a la entrada de la cadena receptora, modificando en gran medida la figura de ruido del sistema. Las pérdidas de un desfasador digital varían con el desfase introducido, por ese motivo es necesario caracterizar y calibrar los dispositivos correctamente. Los trabajos presentados en este manuscrito constan de un desfasador reflectivo con un conmutador doble serie paralelo para igualar las pérdidas de inserción en los dos estados y también un conmutador de una entrada y dos salidas cuyos puertos están adaptados en todo momento independientemente del camino del conmutador para evitar las reflexiones y fugas entre redes o elementos radiantes. El tomo finaliza con un resumen de las publicaciones en revistas científicas y ponencias en congresos, nacionales e internacionales, el marco de trabajo en el que se ha desarrollado, las colaboraciones que se han realizado y las líneas de investigación futuras. ABSTRACT This thesis was carried out in the Radiation Group of the Signals, Systems and Radiocomunications department of ETSI de Telecomunicación from Technical University of Madrid. Its title is "Contribution to active array antennas at X band" and it is developed by Gonzalo Expósito Domínguez, Electrical Engineer MsC. under the supervision of Prof. Dr. Manuel Sierra Castañer and Dr. José Manuel Fernández González. This thesis is focused on active antennas, specifically multibeam and electronic steering antenas. In the first part of the thesis a thorough description of the state of the art is presented. This study compiles the fundamentals of this antennas, operation problems and limits, up to the breakthrough applications. The critical design problems are described to use them eventually in the design, simulation and prototyping of an airborne steering array antenna for satellite communication at X band. The main objective of this thesis is to apply new techniques to the design of electronically steering antennas. Therefore the new original contributions are the application of Electromagnetic Band Gap materials (EBG) between radiating elements to reduce the mutual coupling when phase shift between elements exist and phase shifting networks where special characteristics are required. So far, the EBG structures have been constructed with high permitivity substrates in order to increase the available space between radiating elements and reduce the size of the structures. However, the surface wave propagation modes are enhanced and therefore the mutual coupling increases when high permitivity substrates are used. By using multilayered substrates and edge location via, the size is reduced meanwhile low permitivity substrates are used without reducing the radiation efficiency or enhancing the surface propagation modes. The last part of the thesis is focused on the phase shifting distribution networks for multibeam antennas. This is a critical part in the antenna design because the insertion loss in the distribution network behaves as an attenuator located in the first place in a receiver chain. The insertion loss will affect directly to the receiver noise figure and the insertion loss in a phase shifter vary with the phase shift. Therefore the devices must be well characterized and calibrated in order to obtain a properly operation. The work developed in this thesis are a reflective phase shifter with a series-shunt switch in order to make symmetrical the insertion loss for the two states and a complex Single Pole Double Through (SPDT) with matched ports in order to reduce the reflections and leakage between feeding networks and radiating elements. The end of this Ph D. dissertation concludes with a summary of the publications in national and international conferences and scientific journals, the collaborations carried out along the thesis and the future research lines.