971 resultados para mobility assisted growth


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Plasma sheath, nanostructure growth, and thermal models are used to describe carbon nanofiber (CNF) growth and heating in a low-temperature plasma. It is found that when the H2 partial pressure is increased, H atom recombination and H ion neutralization are the main mechanisms responsible for energy release on the catalyst surface. Numerical results also show that process parameters such as the substrate potential, electron temperature and number density mainly affect the CNF growth rate and plasma heating at low catalyst temperatures. In contrast, gas pressure, ion temperature, and the C2H2:H2 supply ratio affect the CNF growth at all temperatures. It is shown that plasma-related processes substantially increase the catalyst particle temperature, in comparison to the substrate and the substrate-holding platform temperatures.

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The growth of single-walled carbon nanotubes (SWCNTs) in plasma-enhanced chemical vapor deposition (PECVD) is studied using a surface diffusion model. It is shown that at low substrate temperatures (≤1000 K), the atomic hydrogen and ion fluxes from the plasma can strongly affect nanotube growth. The ion-induced hydrocarbon dissociation can be the main process that supplies carbon atoms for SWCNT growth and is responsible for the frequently reported higher (compared to thermal chemical vapor deposition) nanotube growth rates in plasma-based processes. On the other hand, excessive deposition of plasma ions and atomic hydrogen can reduce the diffusion length of the carbon-bearing species and their residence time on the nanotube lateral surfaces. This reduction can adversely affect the nanotube growth rates. The results here are in good agreement with the available experimental data and can be used for optimizing SWCNT growth in PECVD.

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Optically transparent, highly oriented nanocrystalline AlN(002) films have been synthesized using a hybrid plasma enhanced chemical vapor deposition and plasma-assisted radio frequency (rf) magnetron sputtering process in reactive Ar+ N2 and Ar+ N2 + H2 gas mixtures at a low Si(111)/glass substrate temperature of 350 °C. The process conditions, such as the sputtering pressure, rf power, substrate temperature, and N2 concentration were optimized to achieve the desired structural, compositional, and optical characteristics. X-ray diffractometry reveals the formation of highly c -oriented AlN films at a sputtering pressure of 0.8 Pa. Field emission scanning electron microscopy suggests the uniform distribution of AlN grains over large surface areas and also the existence of highly oriented in the (002) direction columnar structures of a typical length ∼100-500 nm with an aspect ratio of ∼7-15. X-ray photoelectron and energy dispersive x-ray spectroscopy suggest that films deposited at a rf power of 400 W feature a chemically pure and near stoichiometric AlN. The bonding states of the AlN films have been confirmed by Raman and Fourier transform infrared spectroscopy showing strong E2 (high) and E1 transverse optical phonon modes. Hydrogenated AlN films feature an excellent optical transmittance of ∼80% in the visible region of the spectrum, promising for advanced optical applications.

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Silicon nanowires were grown on Si substrates by electron beam evaporation (EBE) was demonstrated using Indium as an alternate catalyst to gold. We have studied the effect of substrate (growth) temperature, deposition time on the growth of nanowires. It was observed that a narrow temperature window from 300 degrees C to 400 degrees C for the nanowires growth. At growth temperature >= 400 degrees C suppression of nanowires growth was observed due to evaporation of catalyst particle. It is also observed that higher deposition times also leading to the absence of nanowire growth as well as uncatalyzed deposition on the nanowires side walls due to limited surface diffusion of ad atoms and catalyst evaporation.

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A systematic study of Gold catalyzed growth of Ge nanoneedles by PECVD at low temperatures (<400 degrees C) is presented. Morphology, growth rate and aspect ratio of the needles are studied as a function of power, gas flow rate and chamber pressure. Nanoneedles were grown at pre-defined positions with catalytic particles obtained by e-Beam Lithography and lift off. This opens up the possibility of using Ge Nano needles in photovoltaic, nanoelectronics and nanosensor device applications.

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Cobalt nanotubes (CoNTs) with very high longitudinal coercivity were prepared by electrodeposition of cobalt acetate for the first time by using anodized alumina (AAO) template. They were then characterized with X-ray diffraction (XRD), a field emission scanning electron microscope (FESEM), and a transmission electron microscope (TEM). Formation of a highly ordered hexagonal cobalt phase is observed. Room temperature SQUID (superconducting quantum interference device) magnetometer measurements indicate that the easy axis of magnetization is parallel to the nanotube axis. These CoNTs exhibit very high longitudinal coercivity of ∼820 Oe. A very high intertubular interaction resulting from magnetostatic dipolar interaction between nanotubes is observed. Thick-walled nanotubes were also fabricated by using cobalt acetate tetrahydrate precursors. A plausible mechanism for the formation of CoNTs based on mobility assisted growth is proposed. The role of the hydration layer and the mobility of metal ions are elucidated in the case of the growth mechanism of one-dimensional geometry

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Magnetic nanowires (NWs) are ideal materials for the fabrication of various multifunctional nanostructures which can be manipulated by an external magnetic fi eld. Highly crystalline and textured nanowires of nickel (Ni NWs) and cobalt (Co NWs) with high aspect ratio (~330) and high coercivity have been synthesized by electrodeposition using nickel sulphate hexahydrate (NiSO4·6H2O) and cobalt sulphate heptahydrate (CoSO4·7H2O) respectively on nanoporous alumina membranes. They exhibit a preferential growth along〈110〉. A general mobility assisted growth mechanism for the formation of Ni and Co NWs is proposed. The role of the hydration layer on the resulting one-dimensional geometry in the case of potentiostatic electrodeposition is verified. A very high interwire interaction resulting from magnetostatic dipolar interactions between the nanowires is observed. An unusual low-temperature magnetisation switching for fi eld parallel to the wire axis is evident from the peculiar high fi eld M(T) curve

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Magnetic heterostructures with carbon nanotubes having multiple functionalities are fascinating materials which can be manipulated by means of an external magnetic field. In this paper we report our investigations on the synthesis and optical limiting properties of pristine cobalt nanotubes and high coercivity cobalt-in-carbon nanotubes (a new nanosystem where carbon nanotubes are filled with cobalt nanotubes). A general mobility assisted growth mechanism for the formation of one-dimensional nanostructures inside nanopores is verified in the case of carbon nanotubes. The open-aperture z-scan technique is employed for the optical limiting measurements in which nanosecond laser pulses at 532 nm have been used for optical excitation. Compared to the benchmark pristine carbon nanotubes these materials show an enhanced nonlinear optical absorption, and the nonlinear optical parameters calculated from the data show that these materials are efficient optical limiters. To the best of our knowledge this is the first report where the optical limiting properties of metal nanotubes are compared to those of carbon nanotubes

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Hybrid magnetic nanostructures with high coercivity have immense application potential in various fields. Nickel (Ni) electrodeposited inside Cobalt (Co) nanotubes (a new system named Ni @ Co nanorods) were fabricated using a two-step potentiostatic electrodeposition method. Ni @ Co nanorods were crystalline, and they have an average diameter of 150 nm and length of *15 lm. The X-ray diffraction studies revealed the existence of two separate phases corresponding to Ni and Co. Ni @ Co nanorods exhibited a very high longitudinal coercivity. The general mobility-assisted growth mechanism proposed for the growth of one-dimensional nanostructures inside nano porous alumina during potentiostatic electrodeposition is found to be valid in this case too

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Synthesis of one-dimensional AlN nanostructures commonly requires high process temperatures (>900 °C), metal catalyst, and hazardous gas/powder precursors. We report on a simple, single-step, catalyst-free, plasma-assisted growth of dense patterns of size-uniform single-crystalline AlN nanorods at a low substrate temperature (∼650 °C) without any catalyst or hazardous precursors. This unusual growth mechanism is based on highly effective plasma dissociation of N2 molecules, localized species precipitation on AlN islands, and reduced diffusion on the nitrogen-rich surface. This approach can also be used to produce other high-aspect-ratio oxide and nitride nanostructures for applications in energy conversion, sensing, and optoelectronics. © 2010 American Institute of Physics.

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Multiscale numerical modeling of the species balance and transport in the ionized gas phase and on the nanostructured solid surface complemented by the heat exchange model is used to demonstrate the possibility of minimizing the Gibbs-Thompson effect in low-temperature, low-pressure chemically active plasma-assisted growth of uniform arrays of very thin Si nanowires, impossible otherwise. It is shown that plasma-specific effects drastically shorten and decrease the dispersion of the incubation times for the nucleation of nanowires on non-uniform Au catalyst nanoparticle arrays. The fast nucleation makes it possible to avoid a common problem of small catalyst nanoparticle burying by amorphous silicon. These results explain a multitude of experimental observations on chemically active plasma-assisted Si nanowire growth and can be used for the synthesis of a range of inorganic nanowires for environmental, biomedical, energy conversion, and optoelectronic applications.