Monolithic master oscillator power amplifier at 1.58 µm for lidar measurements

Nowadays the interest in high power semiconductor devices is growing for applications such as telemetry, lidar system or free space communications. Indeed semiconductor devices can be an alternative to solid state lasers because they are more compact and less power consuming. These characteristics are very important for constrained and/or low power supply environment such as airplanes or satellites. Lots of work has been done in the 800-1200 nm range for integrated and free space Master Oscillator Power Amplifier (MOPA) [1]-[3]. At 1.5 ?m, the only commercially available MOPA is from QPC [4]: the fibred output power is about 700 mW and the optical linewidth is 500 kHz. In this paper, we first report on the simulations we have done to determine the appropriate vertical structure and architecture for a good MOPA at 1.58 ?m (section II). Then we describe the fabrication of the devices (section III). Finally we report on the optical and electrical measurements we have done for various devices (section IV).

Tunable master-oscillator power-amplifier based on chirped quantum-dot structures

A broadly tunable master-oscillator power-amplifier (MOPA) picosecond optical pulse source is demonstrated, consisting of an external cavity passively mode-locked laser diode with a tapered semiconductor amplifier. By employing chirped quantum-dot structures on both the oscillator's gain chip and amplifier, a wide tunability range between 1187 and 1283 nm is achieved. Under mode-locked operation, the highest output peak power of 4.39 W is achieved from the MOPA, corresponding to a peak power spectral density of 31.4 dBm/nm. © 1989-2012 IEEE.

Tunable master-oscillator power-amplifier using all chirped quantum-dot structures

A tunable master-oscillator power-amplifier (MOPA) picosecond optical pulse source using all chirped quantum dot (QD) structures is demonstrated (60nm tunability). Under fundamental mode-locked operation, the highest peak power of 4.39 W is achieved.

Picosecond pulse generation in narrow stripe mode-locked quantum dot master oscillator power amplifier

This paper reports a monolithically integrated mode-locked narrow stripe QD MOPA operating at 1300nm generating a stable 20GHz pulse train with an average power of 46.4mW and a pulse duration of 8.3ps. © Optical Society of America.

High-peak-power pulse generation from a monolithic master oscillator power amplifier at 1.5 μm

We present an experimental study on the generation of high-peak-power short optical pulses from a fully integrated master-oscillator power-amplifier emitting at 1.5 μm. High-peak-power (2.7 W) optical pulses with short duration (100 ps) have been generated by gain switching the master oscillator under optimized driving conditions. The static and dynamic characteristics of the device have been studied as a function of the driving conditions. The ripples appearing in the power-current characteristics under cw conditions have been attributed to mode hopping between the master oscillator resonant mode and the Fabry-Perot modes of the entire device cavity. Although compound cavity effects have been evidenced to affect the static and dynamic performance of the device, we have demonstrated that trains of single-mode short optical pulses at gigahertz frequencies can be conveniently generated in these devices.

Dynamic response of a monolithic master-oscillator power-amplifier at 1.5 µm

We study experimentally the dynamic properties of a fully integrated high power master-oscillator power-amplifier emitting at 1.5 μm under continuous wave and gain-switching conditions. High peak power (2.7 W) optical pulses with short duration (~ 110 ps) have been generated by gain switching the master-oscillator. We show the existence of working points at very close driving conditions with stable or unstable regimes caused by the compound cavity effects. The optical and radio-frequency spectra of stable and unstable operating points are analyzed.

Analysis of mode competition in a monolithic master- oscillator power‐amplifier emitting at 1.5 μm

The optical and radio-frequency spectra of a monolithic master-oscillator power-amplifier emitting at 1.5 ?m have been analyzed in a wide range of steady-state injection conditions. The analysis of the spectral maps reveals that, under low injection current of the master oscillator, the device operates in two essentially different operation modes depending on the current injected into the amplifier section. The regular operation mode with predominance of the master oscillator alternates with lasing of the compound cavity modes allowed by the residual reflectance of the amplifier front facet. The quasi-periodic occurrence of these two regimes as a function of the amplifier current has been consistently interpreted in terms of a thermally tuned competition between the modes of the master oscillator and the compound cavity modes.

Emission regimes in a distributed feedback tapered master-oscillator power-amplifier at 1.5 µm

Integrated master-oscillator power amplifiers driven under steady-state injection conditions are known to show a complex dynamics resulting in a variety of emission regimes. We present experimental results on the emission characteristics of a 1.5 µm distributed feedback tapered master-oscillator power-amplifier in a wide range of steady-state injection conditions, showing different dynamic behaviors. The study combines the optical and radio-frequency spectra recorded under different levels of injected current into the master oscillator and the power amplifier sections. Under low injection current of the master oscillator the correlation between the optical and radio-frequency spectral maps allows to identify operation regimes in which the device emission arises from either the master oscillator mode or from the compound cavity modes allowed by the residual reflectance of the amplifier front facet. The quasi-periodic occurrence of these emission regimes as a function of the amplifier current is interpreted in terms of a thermally tuned competition between the modes of the master oscillator and the compound cavity modes. Under high injection current of the masteroscillator, two different regimes alternate quasi-periodically as a function of the injected current in the power amplifier: a stable regime with a single mode emission at the master oscillator frequency, and an unstable and complex self-pulsating regime showing strong peaks in the radio-frequency spectra as well as multiple frequencies in the optical spectra.

20-W average power, high repetition rate, nanosecond pulse with diffraction limit from an all-fiber MOPA system

In this article, we report an all-fiber master oscillator power amplifier (MOPA) system, which can provide high repetition rate and nanosecond pulse with diffraction-limit. The system was constructed using a (2 + 1) X 1 multimode combiner. The Q-Switched, LD pumped Nd:YVO4 solid-state laser wets used (is master oscillator. The 976-nm fiber-coupled module is used as pump source. A 10-m long China-made Yb3+-doped D-shape double-clad large-mode-area fiber was used as amplifier fiber. The MOPA produced as much as 20-W average power with nanosecond pulse and near diffraction limited. The pulse duration is maintained at about 15 its during 50-175 kHz. The system employs a simple and compact architecture and is therefore suitable for the use in practical applications such as scientific and military airborne LIDAR and imaging. Based oil this system. the amplification performances of. the all fiber amplifier is investigated. (C) 2008 Wiley Periodicals, Inc.

用于高重复频率热容主振荡功率放大器激光系统的波前检测技术

高重复频率热容主振荡功率放大器(MOPA)激光系统的工作过程一般只持续几秒至几十秒,在此过程中系统输出光束的波前畸变是动态变化的。采用环路径向剪切干涉(CRWSI)技术对高重复频率热容MOPA系统波前畸变的变化过程进行检测,并对系统的总体结构进行了设计。搭建了一个简化的实验系统,采用平凹透镜来代替光放大器产生波前畸变,并由此对环路径向剪切干涉仪的测量精度进行了验证。结果表明,实验测量结果与理论计算值之间的峰值误差为7.8%(0.02λ)。

高功率脉冲双包层光纤激光器的新进展

对高功率脉冲双包层光纤激光器的国内外研究进展进行评述，通过建立了小信号瞬态增益模型，对脉冲激光信号经过双包层光纤放大后的波形进行了数值模拟。分析了基于MOPA方式脉冲双包层光纤激光器的几个问题，报道了中科院上海光机所采用振荡-放大（MOPA）方法获得133．8W平均功率脉冲放大输出的实验结果。

高功率双包层光纤放大器

高功率双包层光纤放大器在光纤传感、光纤通讯、光谱测量和惯性约束聚变等领域有广泛应用。介绍了两种获得放大激光输出的高功率双包层光纤放大器：单频双包层光纤放大器和脉冲双包层光纤放大器。分析了它们的工作原理及关键技术，并对国内外近期进展作了综述。