Fabrication of Fe-doped WO3 films for NO2 sensing at lower operating temperature

Fe-doped tungsten oxide thin films with different concentrations (0 to 2.6 at%) were synthesized on glass and alumina substrates at room temperature using DC reactive sputtering and subsequently annealed at 300oC for 1 hour in air. The alumina substrate has pre-printed interdigitated Pt-electrodes for gas sensing measurements. The effects of Fe-doping on the film structure and morphology, electronic and optical properties for gas sensing were investigated. The grain size of the different films on the alumina and Pt regions of the substrate vary only slightly between 43-57 nm with median size of about 50 nm. Raman spectra showed that the integrated intensity of W=O to O–W–O bands increases with increasing Fe concentrations and this indicated an increase in the number of defects. From XPS the different concentrations of the Fe-doped films were 0.03 at%, 1.33 at% and 2.6 at%. All the films deposited on glass substrate have shown similar visible transmittance (about 70%) but the optical band gap of the pure film decreased form 3.30 eV to 3.15 eV after doping with 2.6 at% Fe. The Fe-doped WO3 film with the highest Fe concentration (2.6 at% Fe) has shown an enhanced gas sensing properties to NO2 at relatively lower operating temperature (150oC) and this can be attributed to the decrease in the optical band gap and an increase in the number of defects compared to the pure WO3 film.

Low temperature CO sensitive nanostructured WO3 thin films doped with Fe

Nanostructured tungsten oxide thin film based gas sensors have been developed by thermal evaporation method to detect CO at low operating temperatures. The influence of Fe-doping and annealing heat treatment on microstructural and gas sensing properties of these films have been investigated. Fe was incorporated in WO3 film by co-evaporation and annealing was performed at 400oC for 2 hours in air. AFM analysis revealed a grain size of about 10-15 nm in all the films. GIXRD analysis showed that as-deposited films are amorphous and annealing at 400oC improved the crystallinity. Raman and XRD analysis indicated that Fe is incorporated in the WO3 matrix as a substitutional impurity, resulting in shorter O-W-O bonds and lattice cell parameters. Doping with Fe contributed significantly towards CO sensing performance of WO3 thin films. A good response to various concentrations (10-1000 ppm) of CO has been achieved with 400oC annealed Fe-doped WO3 film at a low operating temperature of 150oC.

Performance study of high operating temperature HgCdTe mid wave infrared detector through numerical modeling

The design of present generation uncooled Hg1-xCdxTe infrared photon detectors relies on complex heterostructures with a basic unit cell of type (n) under bar (+)/pi/(p) under bar (+). We present an analysis of double barrier (n) under bar (+)/pi/(p) under bar (+) mid wave infrared (x = 0.3) HgCdTe detector for near room temperature operation using numerical computations. The present work proposes an accurate and generalized methodology in terms of the device design, material properties, and operation temperature to study the effects of position dependence of carrier concentration, electrostatic potential, and generation-recombination (g-r) rates on detector performance. Position dependent profiles of electrostatic potential, carrier concentration, and g-r rates were simulated numerically. Performance of detector was studied as function of doping concentration of absorber and contact layers, width of both layers and minority carrier lifetime. Responsivity similar to 0.38 A W-1, noise current similar to 6 x 10(-14) A/Hz(1/2) and D* similar to 3.1 x 10(10)cm Hz(1/2) W-1 at 0.1 V reverse bias have been calculated using optimized values of doping concentration, absorber width and carrier lifetime. The suitability of the method has been illustrated by demonstrating the feasibility of achieving the optimum device performance by carefully selecting the device design and other parameters. (C) 2010 American Institute of Physics. doi:10.1063/1.3463379]

Exploring novel methods to achieve sensitivity limits for high operating temperature infrared detectors

A review of high operating temperature (HOT) infrared (IR) photon detector technology vis-a-vis material requirements, device design and state of the art achieved is presented in this article. The HOT photon detector concept offers the promise of operation at temperatures above 120 K to near room temperature. Advantages are reduction in system size, weight, cost and increase in system reliability. A theoretical study of the thermal generation-recombination (g-r) processes such as Auger and defect related Shockley Read Hall (SRH) recombination responsible for increasing dark current in HgCdTe detectors is presented. Results of theoretical analysis are used to evaluate performance of long wavelength (LW) and mid wavelength (MW) IR detectors at high operating temperatures. (C) 2013 Elsevier B.V. All rights reserved.

Half-bridge SIC inverter for hybrid electric vehicles: Design, development and testing at higher operating temperature

In recent years, Silicon Carbide (SiC) semiconductor devices have shown promise for high density power electronic applications, due to their electrical and thermal properties. In this paper, the performance of SiC JFETs for hybrid electric vehicle (HEV) applications is investigated at heatsink temperatures of 100 °C. The thermal runaway characteristics, maximum current density and packaging temperature limitations of the devices are considered and the efficiency implications discussed. To quantify the power density capabilities of power transistors, a novel 'expression of rating' (EoR) is proposed. A prototype single phase, half-bridge voltage source inverter using SiC JFETs is also tested and its performance at 25 °C and 100 °C investigated.

Thermal material with low curie temperature in a thermally actuated superconducting flux pump system

A thermally actuated flux pump is an efficient method to magnetize the high-temperature superconductor (HTS) bulk without applying a strong magnetic field. A thermal material is employed as a magnetic switch, which decides the efficiency of the system. To measure the Curie temperatures of those samples without destroying them, the nondestructive Curie temperature (NDT) measurement was developed. The Curie temperature of gadolinium (Gd) was measured by the NDT method and compared to the results from superconducting quantum interference device (SQUID). Because the SQUID tests require the sample to be cut into small piece, a constant shape of the testing sample could not be guaranteed. The demagnetizing effect was considered to remove the shape effect. The intrinsic permeability was modified from the apparent susceptibility by considering demagnetization. A thermal material with low Curie temperature, Mg 0.15Cu0.15Zn0.7Ti0.04Fe 1.96O4, was synthesized and its performance was tested and compared with previous thermal materials. Comparisons of three thermal materials, including the Curie temperature and the permeability, will be detailed in the paper. © 2002-2011 IEEE.

A novel ultra low power temperature sensor for UHF RFID tag chip

A novel ultra low power temperature sensor for UHF RFID tag chip is presented. The sensor consists of a constant pulse generator, a temperature related oscillator, a counter and a bias. Conversion of temperature to digital output is fulfilled by counting the number of the clocks of the temperature related oscillator in a constant pulse period. The sensor uses time domain comparing, where high power consumption bandgap voltage references and traditional ADCs are not needed. The sensor is realized in a standard 0.18 mu m CMOS process, and the area is only 0.2mm(2). The accuracy of the temperature sensor is +/- 1 degrees C after calibration. The power consumption of the sensor is only 0.9 mu W.

High-density and low electron temperature direct current reflex plasma source

A new type of direct current, high-density, and low electron temperature reflex plasma source, obtained as a hybrid between a modified hollow-cathode discharge and a Penning ionization gauge discharge is presented. The plasma source was tested in argon, nitrogen, and oxygen over a range pressure of 1.0-10(-3) mbar, discharge currents 20-200 mA, and magnetic field 0-120 Gauss. Both external parameters, such as breakdown potential and the discharge voltage-current characteristic, and its internal parameters, like the electron energy distribution function, electron and ion densities, and electron temperature, were measured. Due to the enhanced hollow-cathode effect by the magnetic trapping of electrons, the density of the bulk plasma is as high as 10(18) m(-3), and the electron temperature is as low as a few tenths of electron volts. The plasma density scales with the dissipated power. Another important feature of this reflex plasma source is its high degree of uniformity, while the discharge bulk region is free of an electric field. (C) 2004 American Institute of Physics.

Molecular nitrogen in comet 67P/Churyumov-Gerasimenko indicates a low formation temperature

Molecular nitrogen (N2) is thought to have been the most abundant form of nitrogen in the protosolar nebula. It is the main N-bearing molecule in the atmospheres of Pluto and Triton and probably the main nitrogen reservoir from which the giant planets formed. Yet in comets, often considered the most primitive bodies in the solar system, N2 has not been detected. Here we report the direct in situ measurement of N2 in the Jupiter family comet 67P/Churyumov-Gerasimenko, made by the Rosetta Orbiter Spectrometer for Ion and Neutral Analysis mass spectrometer aboard the Rosetta spacecraft. A N2/CO ratio of Embedded Image (2σ standard deviation of the sampled mean) corresponds to depletion by a factor of ~25.4 ± 8.9 as compared to the protosolar value. This depletion suggests that cometary grains formed at low-temperature conditions below ~30 kelvin.

The effect of operating temperature on the cost of energy from solar thermal electric power plants /

"Prepared for the U.S. Dept. of Energy, under contract DE-AC04-76-DP00789."