40-Gb/s Low Chirp Electroabsorption Modulator Integrated With DFB Laser

A 40-Gb/s monolithically integrated transmitter containing an InGaAsP multiple-quantum-well electroabsorption modulator (EAM) with lumped electrode and a distributed-feedback semiconductor laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 20 mA, over 40-dB sidemode suppression ratio at 1550 nm, and more than 30-dB dc extinction ratio when coupled into a single-mode fiber. By adopting a deep ridge waveguide and planar electrode structures combined with buried benzocyclobutene, the capacitance of the EAM is reduced to 0.18 pF and the small-signal modulation bandwidth exceeds 33 GHz. Negative chirp operation is also realized when the bias voltage is beyond 1.6 V.

Measurement of chirp parameter and modulation index of a semiconductor laser based on optical spectrum analysis

A novel and simple method for measuring the chirp parameter, frequency, and intensity modulation indexes of directly modulated lasers is proposed in a small-signal modulation scheme. A graphical approach is presented. An analytical solution to the measurement of low chirp parameters is also given. The measured results agree well with those obtained using the conventional methods.

Electroabsoorption-modulated laser light-source module using selective area growth for 10 Gb/s transmission

In this work, a novel light source of strained InGaAsP/InGaAsP MQW EAM monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 x 10(2) Pa) selective area growth ( SAG) MOCVD technique. Superior device performances have been obtained, sue h as low threshold current of 19 mA, output light power of about 7 mW, and over 16 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3 dB bandwidth in EAM part is developed with a driving voltage of 3 V. After the chip is packaged into a 7-pin butterfly compact module, 10-Gb/s NRZ transmission experiments are successfully performed in standard fiber. A clearly-open eye diagram is achieved in the module output with over 8.3 dB dynamic extinction ratio. Power penalty less than 1.5 dB has been obtained after transmission through 53.3 km of standard fiber, which demonstrates that high-speed, low chirp EAM/DFB integrated light source can be obtained by ultra-low-pressure (22 x 102 Pa) SAG method.

Analysis and optimisation of semiconductor reflective modulators for optical networks

Reflective modulators based on the combination of an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) are attractive devices for applications in long reach carrier distributed passive optical networks (PONs) due to the gain provided by the SOA and the high speed and low chirp modulation of the EAM. Integrated R-EAM-SOAs have experimentally shown two unexpected and unintuitive characteristics which are not observed in a single pass transmission SOA: the clamping of the output power of the device around a maximum value and low patterning distortion despite the SOA being in a regime of gain saturation. In this thesis a detailed analysis is carried out using both experimental measurements and modelling in order to understand these phenomena. For the first time it is shown that both the internal loss between SOA and R-EAM and the SOA gain play an integral role in the behaviour of gain saturated R-EAM-SOAs. Internal loss and SOA gain are also optimised for use in a carrier distributed PONs in order to access both the positive effect of output power clamping, and hence upstream dynamic range reduction, combined with low patterning operation of the SOA Reflective concepts are also gaining interest for metro transport networks and short reach, high bit rate, inter-datacentre links. Moving the optical carrier generation away from the transmitter also has potential advantages for these applications as it avoids the need for cooled photonics being placed directly on hot router line-cards. A detailed analysis is carried out in this thesis on a novel colourless reflective duobinary modulator, which would enable wavelength flexibility in a power-efficient reflective metro node.

Analytical expressions for the FM and AM responses of an integrated laser-modulator

The need for low-chirp and compact transmitters for high-bit-rate optical links has led to the development of integrated laser electroabsorption modulators (ILM). We have investigated feedback effects inducing frequency chirp by developing a model treating the ILM as a whole and obtained analytical expressions of the FM and AM responses. The variation of the frequency chirp with the residual facet reflectivity of the modulator section is calculated. The model predicts the unusual peak in the measured frequency responses and has been used to define design rules.

Low-loss waveguides in borosilicate glass fabricated by high-repetition-Rate femtosecond chirp-pulsed oscillator

We describe fabrication and characterisation of smooth low-loss waveguides in BK7 optical glass bymeans of direct femtosecond inscription with chirp-pulse oscillator, operating at 800 nm and 11 MHz repetition rate.

Low-loss waveguides in borosilicate glass fabricated by high-repetition-Rate femtosecond chirp-pulsed oscillator

We describe fabrication and characterisation of smooth low-loss waveguides in BK7 optical glass bymeans of direct femtosecond inscription with chirp-pulse oscillator, operating at 800 nm and 11 MHz repetition rate.

Processing of ultra-wideband low-frequency signals, for application in Foliage Penetration (FOPEN) Synthetic Aperture Radar (SAR) systems

Foliage Penetration (FOPEN) radar systems were introduced in 1960, and have been constantly improved by several organizations since that time. The use of Synthetic Aperture Radar (SAR) approaches for this application has important advantages, due to the need for high resolution in two dimensions. The design of this type of systems, however, includes some complications that are not present in standard SAR systems. FOPEN SAR systems need to operate with a low central frequency (VHF or UHF bands) in order to be able to penetrate the foliage. High bandwidth is also required to obtain high resolution. Due to the low central frequency, large integration angles are required during SAR image formation, and therefore the Range Migration Algorithm (RMA) is used. This project thesis identifies the three main complications that arise due to these requirements. First, a high fractional bandwidth makes narrowband propagation models no longer valid. Second, the VHF and UHF bands are used by many communications systems. The transmitted signal spectrum needs to be notched to avoid interfering them. Third, those communications systems cause Radio Frequency Interference (RFI) on the received signal. The thesis carries out a thorough analysis of the three problems, their degrading effects and possible solutions to compensate them. The UWB model is applied to the SAR signal, and the degradation induced by it is derived. The result is tested through simulation of both a single pulse stretch processor and the complete RMA image formation. Both methods show that the degradation is negligible, and therefore the UWB propagation effect does not need compensation. A technique is derived to design a notched transmitted signal. Then, its effect on the SAR image formation is evaluated analytically. It is shown that the stretch processor introduces a processing gain that reduces the degrading effects of the notches. The remaining degrading effect after processing gain is assessed through simulation, and an experimental graph of degradation as a function of percentage of nulled frequencies is obtained. The RFI is characterized and its effect on the SAR processor is derived. Once again, a processing gain is found to be introduced by the receiver. As the RFI power can be much higher than that of the desired signal, an algorithm is proposed to remove the RFI from the received signal before RMA processing. This algorithm is a modification of the Chirp Least Squares Algorithm (CLSA) explained in [4], which adapts it to deramped signals. The algorithm is derived analytically and then its performance is evaluated through simulation, showing that it is effective in removing the RFI and reducing the degradation caused by both RFI and notching. Finally, conclusions are drawn as to the importance of each one of the problems in SAR system design.

A new low temperature synthesis route of fraipontite (Zn,Al)3(Si,Al)2O5(OH)4

A low temperature synthesis method based on the decomposition of urea at 90°C in water has been developed to synthesise fraipontite. This material is characterised by a basal reflection 001 at 7.44 Å. The trioctahedral nature of the fraipontite is shown by the presence of a 06l band around 1.54 Å, while a minor band around 1.51 Å indicates some cation ordering between Zn and Al resulting in Al-rich areas with a more dioctahedral nature. TEM and IR indicate that no separate kaolinite phase is present. An increase in the Al content however, did result in the formation of some SiO2 in the form of quartz. Minor impurities of carbonate salts were observed during the synthesis caused by to the formation of CO32- during the decomposition of urea.