DX-like centers in n-type Al-doped ZnS1-xTex grown by molecular-beam epitaxy

Al-related DX-like centers were observed in n-type Al-doped ZnS1-xTex epilayers grown by molecular-beam epitaxy on GaAs substrates. The capacitance-voltage measurement, deep-level transient spectroscopy, and photoconductivity spectroscopy revealed that the behaviors of Al donors in ZnS1-xTex were similar to the so-called DX centers in AlxGa1-xAs. The optical ionization energies (E-i) and emission barriers (E-e) for the observed two Al-related DX-like centers were determined as E-i similar to 1.0 and 2.0cV and E-e similar to 0.21 and 0.39 eV, respectively. It was also shown that the formation of Al-related DX-like centers resulted in a significantly large lattice relaxation in ZnS1-xTex. (C) 2000 Elsevier Science B.V. All rights reserved.

Droplet Epitaxy of InN Quantum Dots on Si(111) by RF Plasma-Assisted Molecular Beam Epitaxy

InN quantum dots (QDs) were fabricated on Si(111) substrate by droplet epitaxy using an RF plasma-assisted MBE system. Variation of the growth parameters, such as growth temperature and deposition time, allowed us to control the characteristic size and density of the QDs. As the growth temperature was increased from 100 C to 300 degrees C, an enlargement of QD size and a drop in dot density were observed, which was led by the limitation of surface diffusion of adatoms with the limited thermal energy. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to assess the QDs size and density. The chemical bonding configurations of InN QDs were examined by X-ray photo-electron spectroscopy (XPS). Fourier transform infrared (FTIR) spectrum of the deposited InN QDs shows the presence of In-N bond. Temperature-dependent photoluminescence (PL) measurements showed that the emission peak energies of the InN QDs are sensitive to temperature and show a strong peak emission at 0.79 eV.

Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be similar to 28.5 meV from the temperature dependent PL studies. The formation process of nano-flowers is investigated and a qualitative mechanism is proposed.

Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Indium Nitride Nanometric-Objects on c-Sapphire Grown by Plasma-Assisted Molecular Beam Epitaxy

The indium nitride (InN)-based nanometric-objects were grown directly on a c-sapphire substrate by using plasma-assisted molecular beam epitaxy (PAMBE) at different substrate temperatures. High resolution X-ray diffraction (HRXRD) reveals the InN (0002) reflection and full width at half maximum (FWHM) found to be decreased with increasing the growth temperature. The size, height and density of the grown nanometric-objects studied by scanning electron microscopy (SEM) has remarkable differences, evidencing the decisive role of substrate temperature. Photoluminescence (PL) studies revealed that the emission energy is shifted towards the higher side from the bulk value, i.e., a blue shift in the PL spectra was observed. The temperature dependence of the PL peak position shows an ``S-shaped'' emission energy shift, which can be attributed to the localization of carriers in the nanometric-objects.

Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

Phase pure wurtzite GaN films were grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) were found to be phase mixtured, containing both cubic (beta) and hexagonal (alpha) modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN films grown with silicon nitride buffer layer grown at 800 degrees C when compared to the samples grown in the absence of silicon nitride buffer layer and with silicon nitride buffer layer grown at 600 degrees C. Core-level photoelectron spectroscopy of Si(x)N(y) layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism was observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibited superior rectifying nature with reduced trap concentrations. Lowest ideality factors (similar to 1.5) were observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658867]

Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model.

Valence band offset at GaN/beta-Si3N4 and beta-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy

Ultra thin films of pure beta-Si3N4 (0001) were grown on Si (111) surface by exposing the surface to radio- frequency nitrogen plasma with a high content of nitrogen atoms. Using beta-Si3N4 layer as a buffer layer, GaN epilayers were grown on Si (111) substrate by plasma-assisted molecular beam epitaxy. The valence band offset (VBO) of GaN/beta-Si3N4/ Si heterojunctions is determined by X-ray photoemission spectroscopy. The VBO at the beta-Si3N4 /Si interface was determined by valence-band photoelectron spectra to be 1.84 eV. The valence band of GaN is found to be 0.41 +/- 0.05 eV below that of beta-Si3N4 and a type-II heterojunction. The conduction band offset was deduced to be similar to 2.36 eV, and a change of the interface dipole of 1.29 eV was observed for GaN/ beta-Si3N4 interface formation. (c) 2011 Elsevier B.V. All rights reserved.

Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy

The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of GaN NDs were studied in a metal-semiconductor-metal configuration. Dark I-V characteristics of lateral grown GaN NDs obeyed the Frenkel-Poole emission model, and the UV response of the device was stable and reproducible with on/off. The responsivity of the detectors is found to be 330 A/W with an external quantum efficiency of 1100%. (C) 2012 The Japan Society of Applied Physics

Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy

This report focuses on the structural and optical properties of the GaN films grown on p-Si (100) substrates along with photovoltaic characteristics of GaN/p-Si heterojunctions fabricated with substrate nitridation and in absence of substrate nitridation. The high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman and photoluminescence (PL) spectroscopic studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN epifilms grown with silicon nitride buffer layer when compared with the sample grown without silicon nitride buffer layer. The low temperature PL shows a free excitonic (FX) emission peak at 3.51 eV at the temperature of 5 K with a very narrow line width of 35 meV. Temperature dependent PL spectra follow the Varshni equation well and peak energy blue shifts by similar to 63 meV from 300 to 5 K. Raman data confirms the strain free nature and reasonably good crystallinity of the films. The GaN/p-Si heterojunctions fabricated without substrate nitridation show a superior photovoltaic performance compared to the devices fabricated in presence of substrate nitridation. The discussions have been carried out on the junction properties. Such single junction devices exhibit a promising fill factor and conversion efficiency of 23.36 and 0.12 %, respectively, under concentrated AM1.5 illumination.

Wurtzite InN nanodots on Si(100) by molecular beam epitaxy

Studies were carried on the growth behavior of InN nanodots by plasma assisted molecular beam epitaxy on bare Si(100) substrates and their structural, optical, electrical properties. The growth was carried out by two different methods such as, (i) mono-step growth process at a low temperature and a (ii) bi-step growth process with the combination of low and high temperatures for the formation of single crystalline nanodots with well defined crystallographic facets due to cluster migration. Low temperature photoluminescence shows a free excitonic (FE) luminescence at 0.80 eV. The Raman spectroscopy and X-ray diffraction studies reveal that the nanodots as well as the film were of wurtzite structure and strain free.

Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy

The growth of nonpolar a- plane (1 1 -2 0) orientation of the GaN epilayers were confirmed by high resolution x-ray diffraction studies. An in-plane orientation relationship was found to be 0 0 0 1] GaN parallel to -1 1 0 1] sapphire and -1 1 0 0] GaN parallel to 1 1 -2 0] sapphire. SEM image shows the reasonably smooth surface. The photoluminescence spectrum shows near band emission (NBE) at 3.439 eV. The room temperature I-V characteristics of Au/a-GaN schottky diode performed. The Schottky barrier height (phi(b)) and the ideality factor (eta) for the Au/a-GaN schottky diode found to be 0.50 eV and 2.01 respectively.

Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

We hereby report the development of non-polar epi-GaN films of usable quality, on an m-plane sapphire. Generally, it is difficult to obtain high-quality nonpolar material due to the planar anisotropic nature of the growth mode. However, we could achieve good quality epi-GaN films by involving controlled steps of nitridation. GaN epilayers were grown on m-plane (10-10) sapphire substrates using plasma assisted molecular beam epitaxy. The films grown on the nitridated surface resulted in a nonpolar (10-10) orientation while without nitridation caused a semipolar (11-22) orientation. Room temperature photoluminescence study showed that nonpolar GaN films have higher value of compressive strain as compared to semipolar GaN films, which was further confirmed by room temperature Raman spectroscopy. The room temperature UV photodetection of both films was investigated by measuring the I-V characteristics under UV light illumination. UV photodetectors fabricated on nonpolar GaN showed better characteristics, including higher external quantum efficiency, compared to photodetectors fabricated on semipolar GaN. X-ray rocking curves confirmed better crystallinity of semipolar as compared to nonpolar GaN which resulted in faster transit response of the device. (C) 2014 AIP Publishing LLC.

Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy

Nonpolar a-plane InN films were grown on r-plane sapphire substrate by plasma assisted molecular beam epitaxy with GaN underlayer. Effect of growth temperature on structural, morphological, and optical properties has been studied. The growth of nonpolar a-plane (1 1 -2 0) orientation was confirmed by high resolution X-ray diffraction study. The film grown at 500 degrees C shows better crystallinity with the rocking curve FWHM 0.67 degrees and 0.85 degrees along 0 0 0 1] and 1 - 1 0 0] directions, respectively. Scanning electron micrograph shows formation of Indium droplets at higher growth temperature. Room temperature absorption spectra show growth temperature dependent band gap variation from 0.74-0.81 eV, consistent with the expected Burstein-Moss effect. The rectifying behaviour of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim