880 resultados para enhanced optical delay


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With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of RCE p-i-n photodetectors (PD) by superimposition of multiple reflected lightwaves. For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE p-i-n PD excluding the transit time of the carriers and RCd response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE p-i-n PD when its active layer is thinner than several 10 nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE p-i-n PD.

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We have synthesized Dy3+-doped ZnO nanoparticles at room temperature through the sol-gel method. X-ray diffraction and Scanning electron microscopic studies confirm the crystalline nature of the particles. Excitonic absorption of ZnO shows three different bands, and we observe that incorporation of Dy3+ results in the shifting and broadening of the n=1 absorption band of ZnO. Photoluminescence studies done at the excitation wavelength of 335 nm show broad emission containing five different bands. Open-aperture z-scan studies done at 532 nm using 5 ns laser pulses show an optical limiting behavior, which numerically fits to a three-photon type absorption process. The nonlinearity is essentially resonant, as it is found to increase consistently with Dy3+ concentration. This feature makes Dy3+-doped ZnO a flexible optical limiter for potential device applications.

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The propagation of ultrashort pulses in a traveling wave semiconductor amplifier is considered. It is demonstrated that the effective polarization relaxation time, which determines the coherence of the interaction of pulses within the medium, strongly depends on its optical gain. As a result, it is shown that at large optical gains the coherence time can exceed the transverse relaxation time T2 by an order of magnitude, this accounting for the strong femtosecond superradiant pulse generation commonly observed in semiconductor laser structures. © 2012 Elsevier B.V. All rights reserved.

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It is shown that transmission and reflection group delay times in an asymmetric single quantum barrier are greatly enhanced by the transmission resonance when the energy of incident particles is larger than the height of the barrier. The resonant transmission group delay is of the order of the quasibound state lifetime in the barrier region. The reflection group delay can be either positive or negative, depending on the relative height of the potential energies on the two sides of the barrier. Its magnitude is much larger than the quasibound state lifetime. These predictions have been observed in microwave experiments. (c) 2005 Elsevier B.V. All rights reserved.

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Germanium- and tellurium-based glasses have been largely studied due to their recognized potential for photonics. In this paper, we review our recent studies that include the investigation of the Stokes and anti-Stokes photoluminescence (PL) in different glass systems containing metallic and semiconductor nanoparticles (NPs). In the case of the samples with metallic NPs, the enhanced PL was attributed to the increased local field on the rare-earth ions located in the proximity of the NPs and/or the energy transfer from the metallic NPs to the rare-earth ions. For the glasses containing silicon NPs, the PL enhancement was mainly due to the energy transfer from the NPs to the Er3+ ions. The nonlinear (NL) optical properties of PbO-GeO 2 films containing gold NPs were also investigated. The experiments in the pico- and subpicosecond regimes revealed enhanced values of the NL refractive indices and large NL absorption coefficients in comparison with the films without gold NPs. The reported experiments demonstrate that germanate and tellurite glasses, having appropriate rare-earth ions doping and NPs concentration, are strong candidates for PL-based devices, all-optical switches, and optical limiting. © 2013 Cid Bartolomeu de Araujo et al.

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Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well (QW) structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence (PL). Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure, compared with the single GaAsN/GaAs QW structure. Strain compensation and In-induced reduction of N incorporation are suggested to be two major factors affecting the optical properties. (C) 2004 American Institute of Physics.

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Fluorescence-enhanced optical imaging is an emerging non-invasive and non-ionizing modality towards breast cancer diagnosis. Various optical imaging systems are currently available, although most of them are limited by bulky instrumentation, or their inability to flexibly image different tissue volumes and shapes. Hand-held based optical imaging systems are a recent development for its improved portability, but are currently limited only to surface mapping. Herein, a novel optical imager, consisting primarily of a hand-held probe and a gain-modulated intensified charge coupled device (ICCD) detector, is developed towards both surface and tomographic breast imaging. The unique features of this hand-held probe based optical imager are its ability to; (i) image large tissue areas (5×10 sq. cm) in a single scan, (ii) reduce overall imaging time using a unique measurement geometry, and (iii) perform tomographic imaging for tumor three-dimensional (3-D) localization. Frequency-domain based experimental phantom studies have been performed on slab geometries (650 ml) under different target depths (1-2.5 cm), target volumes (0.45, 0.23 and 0.10 cc), fluorescence absorption contrast ratios (1:0, 1000:1 to 5:1), and number of targets (up to 3), using Indocyanine Green (ICG) as fluorescence contrast agents. An approximate extended Kalman filter based inverse algorithm has been adapted towards 3-D tomographic reconstructions. Single fluorescence target(s) was reconstructed when located: (i) up to 2.5 cm deep (at 1:0 contrast ratio) and 1.5 cm deep (up to 10:1 contrast ratio) for 0.45 cc-target; and (ii) 1.5 cm deep for target as small as 0.10 cc at 1:0 contrast ratio. In the case of multiple targets, two targets as close as 0.7 cm were tomographically resolved when located 1.5 cm deep. It was observed that performing multi-projection (here dual) based tomographic imaging using a priori target information from surface images, improved the target depth recovery over using single projection based imaging. From a total of 98 experimental phantom studies, the sensitivity and specificity of the imager was estimated as 81-86% and 43-50%, respectively. With 3-D tomographic imaging successfully demonstrated for the first time using a hand-held based optical imager, the clinical translation of this technology is promising upon further experimental validation from in-vitro and in-vivo studies.

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Creation of miniature optical delay lines and buffers is one of the greatest challenges of the modern photonics which can revolutionize optical communications and computing. Several remarkable designs of slow light optical delay lines employing coupled ring resonators and photonic crystal waveguides has been suggested and experimentally demonstrated. However, the insertion loss of these devices is too large for their practical applications. Alternatively, the recently developed photonic fabrication platform, Surface Nanoscale Axial Photonics (SNAP) allows us to fabricate record small delay lines with unprecedentedly small dispersion and low loss. In this report, we review the recent progress in fabrication and design of miniature slow light devices and buffers, in particular, those based on the SNAP technology.

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Opening up a band gap and finding a suitable substrate material are two big challenges for building graphene-based nanodevices. Using state-of-the-art hybrid density functional theory incorporating long range dispersion corrections, we investigate the interface between optically active graphitic carbon nitride (g-C3N4) and electronically active graphene. We find an inhomogeneous planar substrate (g-C3N4) promotes electronrich and hole-rich regions, i.e., forming a well-defined electron−hole puddle, on the supported graphene layer. The composite displays significant charge transfer from graphene to the g-C3N4 substrate, which alters the electronic properties of both components. In particular, the strong electronic coupling at the graphene/g-C3N4 interface opens a 70 meV gap in g-C3N4-supported graphene, a feature that can potentially allow overcoming the graphene’s band gap hurdle in constructing field effect transistors. Additionally, the 2-D planar structure of g-C3N4 is free of dangling bonds, providing an ideal substrate for graphene to sit on. Furthermore, when compared to a pure g-C3N4 monolayer, the hybrid graphene/g-C3N4 complex displays an enhanced optical absorption in the visible region, a promising feature for novel photovoltaic and photocatalytic applications.

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A novel scheme for generation of phase using optical delay lines is proposed. The design of the optical components in the circuit which includes the S bend waveguides and straight waveguide couplers are very important for integrated optics. Beam propagation Method and MatLab is employed for the design.

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We investigate slow-light pulse propagation in an optical fiber via transient stimulated Brillouin scattering. Space-time evolution of a generating slow-light pulse is numerically calculated by solving three-wave coupled-mode equations between a pump beam, an acoustic wave, and a counterpropagating signal pulse. Our mathematical treatments are applicable to both narrowband and broadband pump cases. We show that the time delay of 85% pulse width can be obtained for a signal pulse of the order of subnanosecond pulse width by using a broadband pump, while the signal pulse is broadened only by 40% of the input signal pulse. The physical origin of the pulse broadening and distortion is explained in terms of the temporal decay of the induced acoustic field. (C) 2009 Optical Society of America

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The nonlinear optical properties of Al-doped nc-Si-SiO_2 composite films have been investigated using the time-resolved four-wave mixing technique with a femtosecond laser. The off-resonant third-order nonlinear susceptibility is observed to be 1.0 × 10~(-10) esu at 800nm. The relaxation time of the optical nonlinearity in the films is as short as 60fs. The optical nonlinearity is enhanced due to the quantum confinement of electrons in Si nanocrystals embedded in the SiO_2 films. The enhanced optical nonlinearity does not originate from Al dopant because there are no Al clusters in the films.