Cathodoluminescence Spectroscopy For Evaluation Of Defect Passivation In GaSb

Cathodoluminescence (CL) technique has been employed to study the optical properties of GaSb after deposition of hydrogenated amorphous silicon (a-Si:H). CL images recorded at various depths in the samples clearly show passivation of extended defects on the surface as well as in the bulk region. The passivation of various recombination centres in the bulk is attributed to formation of hydrogen-impurity complexes by diffusion of hydrogen ions from the plasma. Enhancement in luminescence intensity is seen due to passivation of non-radiative recombination centres. The passivation efficiency is found to improve with increase in a-Si:H deposition temperature.

Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer

We have investigated the optical properties of thick InGaN film grown on GaN by cathodeluminescence (CL) spectroscopy. It is found that there is obvious In composition variation in both growth and lateral direction of InGaN film. The depth distribution of In composition is closely related to the strain relaxation process of InGaN film. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and the CL peak energy shifts towards red. Moreover, a rather apparent In composition fluctuation is found in the relaxed upper part of InGaN layer as confirmed by CL imaging.

Cathodoluminescence study of GaN-based film structures

GaN films grown on sapphire substrate with an emphasis on epitaxial lateral overgrown (ELOG) layers with an array of rhombic shaped mask area as well as InGaN/GaN MQW laser diode layer structures were investigated by cathodoluminescence (CL) spectroscopy and CL imaging at room and low temperatures. The microscopic imaging with a high-spatial resolution clearly reveals the distribution of threading dislocations and point defects in ELOG GaN films. The secondary electron and CL data measured on cleaved faces of laser diodes are analyzed in consideration with luminescence mechanisms in semiconductor heterostructures and around the p - n junction, providing important information on the defects and carrier dynamics in laser diode devices.

Proof of solid state cathodoluminescence by using brightness waveform

Three different inorganic-organic hetero-junctions (A : ITO/SiO2/Alq(3)/Al, B: ITO/Alq3/SiO2/Al and C: ITO/SiO2/Alq(3)/ SiO2/Al) were fabricated. The emission can be observed only under positive bias in devices A and B, but under both biases in device C according to their brightness waveforms. With increasing voltage, the increase in blue emission in devices B and C is faster than that in green emission. This is because that the recombination of hot electrons and holes, i.e., electron-hole pairs, produced blue emission in devices B and C, and the recombination of electrons injected from Al with the accumulated holes, which are excited by hot electrons, produced green emission in device A. Hence, the emissions of the devices are attributed to not only the recombination of electrons and accumulated holes, but also the cathodoluminescence-like (CL-like) emission.

Cathodoluminescence and Raman research of V-shape inverted pyramid in HVPE grown GaN film

Thick GaN films with high quality have been grown on (0001) sapphire substrate in a home-made vertical HVPE reactor. Micron-size hexagonal pits with inverted pyramid shape appear on the film surface, which have six triangular {10-11} facets. These I {10-11} facets show strong luminescence emission and are characteristic of doped n-type materials. Broad red emission is suppressed in {10-11} facets and is only found at the flat region out of the pit, which is related with the decreasing defects on {10-11} facets. Low CL emission intensity is observed at the apex of V-shape pits due to the enhanced nonradiative recombination. Raman spectra show that there are higher carrier concentration and low strain in the pit in comparison to the flat region out of the pit. The strain relaxation may be the main mechanism of the V-shape pits formation on the GaN film surface. (c) 2006 Elsevier B.V. All rights reserved.

Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE

Three-dimensional GaN pyramids have been successfully obtained on submicron dot-patterned (0001) sapphire substrates by using the selective metalorganic vapor phase epitaxy (MOVPE) technique. The dot-pattern is a hexagon arranged with a 0.5-mu m width and 1.0-mu m spacing. The GaN structure comprises a hexagonal pyramid covered with six {1 (1) over bar 01} pyramidal facets on the side of a hexagonal pyramid having a (0001) facet on the top. Cathodoluminescence (CL) measurement was carried our. on the hexagonal pyramid at low temperature. Two distinct spectra were observed to occur at about 359 and 329 nm. The higher energy is thought to be related to GaN dot, and the lower one is due to GaN dot band edge emission. The intensities of the two spectra were investigated as a function of temperature in the range of 135-150 K. (C) 2000 Published by Elsevier Science B.V.

Tunable Photoluminescence and Cathodoluminescence Properties of Eu3+-Doped LaInO3 Nanocrystalline Phosphors

LaInO3:Eu3+ phosphors were prepared by a Pechini sol-gel process. X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), diffuse reflectance, photoluminescence, cathodoluminescence spectra, as well as lifetimes were utilized to characterize the synthesized phosphors. XRD results reveal that the sample begins to crystallize at 600 degrees C and pure LaInO3 phase can be obtained at 800 degrees C. The crystallinity increases upon raising the annealing temperature. The FE-SEM images indicate that LaInO3:Eu3+ phosphors are composed of fine and spherical grains around 40-80 nm in size. Under the excitation of UV light and low-voltage electron-beams, LaInO3:Eu3+ phosphors show the characteristic emissions of the Eu3+ (D-5(J)-F-7(J) J,J(')=0,1,2,3 transitions). The luminescence colors can be tuned from yellowish warm white to red by changing the doping concentration of Eu3+ to some extent. The corresponding luminescence mechanisms have been proposed.

Patterned growth and cathodoluminescence of conical boron nitride nanorods

We demonstrate a simple and effective approach for growing large-scale, high-density, and well-patterned conical boron nitride nanorods. A catalyst layer of Fe(NO₃)₃ was patterned on a silicon substrate by using a copper grid as a mask. The nanorods were grown via annealing milled boron carbide powders at 1300 °C in a flow of nitrogen gas. The as-grown nanorods exhibit uniform morphology and the catalyst pattern precisely defines the position of nanorod deposition. Cathodoluminescence (CL) spectra of the nanorods show two broad emission bands centered at 3.75 and 1.85 eV. Panchromatic CL images reveal clear patterned structure

Direct synthesis and strong cathodoluminescence of Al2O3 nanotubes

α-Al₂O₃ nanotubes were synthesized in bulk quantity by using simple physical evaporation of pure aluminum powders at 1000 °C. Field emission scanning electron microscopy and transmission electron microscopy observations show that the nanotubes have diameters smaller than 100 nm and lengths up to several microns. Cathodoluminescence measurements revealed a strong luminescence band in the wavelength range of 280–380 nm centered at 330 nm, which could be attributed to the oxygen vacancies in the α-Al₂O₃ nanotubes. Sacrificial template model is regarded as the possible formation mechanism of the nanotubes.

Quantum mechanical modeling of excited electronic states and their relationship to cathodoluminescence of BaZrO3

First-principles calculations set the comprehension over performance of novel cathodoluminescence (CL) properties of BaZrO3 prepared through microwave-assisted hydrothermal. Ground (singlet, s*) and excited (singlet s** and triplet t**) electronic states were built from zirconium displacement of 0.2 Å in {001} direction. Each ground and excited states were characterized by the correlation of their corresponding geometry with electronic structures and Raman vibrational frequencies which were also identified experimentally. A kind of optical polarization switching was identified by the redistribution of 4dz2 and 4dxz (Zr) orbitals and 2pz O orbital. As a consequence, asymmetric bending and stretching modes theoretically obtained reveal a direct dependence with their polyhedral intracluster and/or extracluster ZrO6 distortions with electronic structure. Then, CL of the as-synthesized BaZrO3 can be interpreted as a result of stable triplet excited states, which are able to trap electrons, delaying the emission process due to spin multiplicity changes. © 2013 AIP Publishing LLC.

Morphological ripening of fluid inclusions and coupled zone-refining in quartz crystals revealed by cathodoluminescence imaging: Implications for CL-petrography, fluid inclusion analysis and trace-element geothermometry

Cathodoluminescence (CL) studies have previously shown that some secondary fluid inclusions in luminescent quartz are surrounded by dark, non-luminescent patches, resulting from fracture-sealing by late, trace-element-poor quartz. This finding has led to the tacit generalization that all dark CL patches indicate influx of low temperature, late-stage fluids. In this study we have examined natural and synthetic hydrothermal quartz crystals using CL imaging supplemented by in-situ elemental analysis. The results lead us to propose that all natural, liquid-water-bearing inclusions in quartz, whether trapped on former crystal growth surfaces (i.e., of primary origin) or in healed fractures (i.e., of pseudosecondary or secondary origin), are surrounded by three-dimensional, non-luminescent patches. Cross-cutting relations show that the patches form after entrapment of the fluid inclusions and therefore they are not diagnostic of the timing of fluid entrapment. Instead, the dark patches reveal the mechanism by which fluid inclusions spontaneously approach morphological equilibrium and purify their host quartz over geological time. Fluid inclusions that contain solvent water perpetually dissolve and reprecipitate their walls, gradually adopting low-energy euhedral and equant shapes. Defects in the host quartz constitute solubility gradients that drive physical migration of the inclusions over distances of tens of μm (commonly) up to several mm (rarely). Inclusions thus sequester from their walls any trace elements (e.g., Li, Al, Na, Ti) present in excess of equilibrium concentrations, thereby chemically purifying their host crystals in a process analogous to industrial zone refining. Non-luminescent patches of quartz are left in their wake. Fluid inclusions that contain no liquid water as solvent (e.g., inclusions of low-density H2O vapor or other non-aqueous volatiles) do not undergo this process and therefore do not migrate, do not modify their shapes with time, and are not associated with dark-CL zone-refined patches. This new understanding has implications for the interpretation of solids within fluid inclusions (e.g., Ti- and Al-minerals) and for the elemental analysis of hydrothermal and metamorphic quartz and its fluid inclusions by microbeam methods such as LA-ICPMS and SIMS. As Ti is a common trace element in quartz, its sequestration by fluid inclusions and its depletion in zone-refined patches impacts on applications of the Ti-in-quartz geothermometer.