Effect of La modification on antiferroelectricity and dielectric phase transition in sol-gel grown PbZrO3 thin films

Antiferroelectricity of sol-gel grown pure and La modified PbZrO3 thin films, with a maximum extent of 6 mol%, has been characterized by temperature dependent P-E hysteresis loops within the applied electric field of 60 MV/m. It has been seen that on extent of La modification electric field induced phase transformation can be altered and at 40 degrees C its maximum value has been observed at +/- 38 MV/m on 6 mol% modifications whereas the minimum value is +/- 22 MV/m on 1 mol%. On La modification the variation of electric field induced phase transformations at 40 degrees C has been correlated with the temperature of ntiferroelectric phase condensation on cooling. The critical electric fields for saturated P-E hysteresis loops have been defined from field dependent maximum polarizations and their variations on La modification show a similar trend as found in their dielectric phase transition temperatures. (C) 2010 Elsevier Ltd. All rights reserved.

Ferroelectricity in Si-doped HfO2 Revealed: A Binary Lead-free Ferroelectric

Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.

Temperature-dependent Raman spectra of K0.2Na0.8NbO3 ceramics

We performed temperature-dependent Raman scattering studies on K0.2Na0.8NbO3 ceramics and compared the results with those for NaNbO3. The wavenumbers associated with NbO6 vibrations suggest the existence of two phase transitions, as occurs with pure NaNbO3 ceramics. Although the disorder on the Na/K site does not change either the room temperature phase of K0.2Na0.8NbO3 or the sequence of phase transitions compared with NaNbO3, it changes the temperature of the lowest phase transition and strongly modifies the temperature of the antiferroelectric --> new phase II phase transition. Additionally, the linewidth analysis shows that the orientational mechanism is the dominant contribution to linewidth, although the anharmonic contribution is increased, when compared with NaNbO3, owing to the random distribution of potassium in the sodium niobate matrix. Copyright (C) 2004 John Wiley Sons, Ltd.