Gamma-ray induced color centers in Yb : YAG crystals grown by Czochralski method

20 at.% Yb:YAG single crystals have been grown by the CZ method and gamma-ray irradiation induced color centers and valence change of Fe3+ and Yb3+ ions in Yb:YAG have been studied. One significant 255 nm absorption band was observed in as-grown crystals and was attributed to Fe3+ ions. Two additional absorption (AA) bands located at 255 nm and 345 nm, respectively, were produced after gamma irradiation. The changes in the AA spectra after gamma irradiation and air annealing are mainly related to the charge exchange of the Fe3+, Fe2+, oxygen vacancies and F-type color centers. Analysis shows that the broad AA band is associated with Fe2+ ions and F-type color centers. The transition Yb3+ Yb2+ takes place as an effect of recharging of one of the Yb3+ ions from a pair in the process of gamma irradiation. (C) 2006 Elsevier Ltd. All rights reserved.

Color centers in Yb : YAG crystals grown by temperature-gradient techniques

Yb: YAG (Yb: Y3Al5O12) crystals have been grown by temperature-gradient techniques (TGT) and their color centers and impurity defects were investigated by means of gamma irradiations and thermal treatment. Two color centers located at 255 and 290 nm were observed in the as-grown TGT-Yb: YAG. Analysis shows that the 255 nm band may be associated with Fe3+ ions. Absorption intensity changes of the 290 nm band after gamma irradiation and thermal treatment indicate that this band may be associated with oxygen-vacancy defects. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Yb：YAG晶体的红外闪烁特性

用脉冲电子束激发测量了不同Yb^3+掺杂浓度的Yb：YAG晶体的红外(IR)闪烁发光性能。Yb：YAG晶体的IR闪烁发光具有高的光产额和长的衰减时间，但存在浓度猝灭效应和温度依赖关系。Yb：YAG晶体的IR闪烁性能还与晶体品质有关，相同掺杂浓度的Yb：YAG晶体，品质优异的会获得更高的光产额。这一初步的研究成果表明，部分掺Yb^3+晶体有可能用于医学成像装置。

Yb：YAG晶体的合作发光现象

研究了Yb：YAG晶体的合作发光现象。当用940hm的近红外光激发时，Yb：YAG晶体有明显的上转换蓝色发光。实验发现498nm的蓝色发光强度与激发功率的平方成正比，而且Yb^3＋掺杂浓度越高，蓝色发光越强。分析表明这是Yb^3＋间强的相互作用导致的合作发光，是由于Yb^3＋在共价性的YAG基质中，它的4f^I3电子易于与近邻离子发生相互作用导致的。

Yb：YAG及Cr，Yb：YAG晶体的发光特性

研究了室温下Yb：YAG的上转换荧光光谱，此荧光归因于Yb^3＋离子的“合作”发光和Yb抖离子到稀土杂质离子的能量转移。测试了Yb；YAG晶体的X射线荧光，发光峰对应于电荷迁移态到Yb^3＋离子的基态、激光态间的跃迁。研究了Cr，Yb：YAG晶体的荧光光谱。讨论了Cr^4＋激光输出的可能性。

Yb:YAP与Yb:YAG晶体光谱性能比较

应用中频感应提拉法生长出掺杂浓度为10 at.-%的Yb:YAG与Yb:YAP晶体，对比了室温下两种晶体的吸收和发射光谱特性。结果表明，Yb:YAG晶体比Yb:YAP晶体有更好的激光性能和低的阈值；同时对比发现，Yb:YAP晶体的吸收截面是Yb:YAG晶体的2.16倍，它容易实现LD泵；由于Yb:YAP晶体的各向异性，它有轴向效应明显，它可以产生偏振激光。

Passively Q-switched Yb : YAG laser with Cr4+: YAG as the saturable absorber

By using a continuous-wave Ti:sapphire laser as a pumping source, we demonstrated a passively Q-switched Yb:YAG laser at room temperature with Cr4+:YAG as the saturable absorber. We achieved an average output power of as much as 55 mW at 1.03 mum with a pulse width (FWHM) as short as 350 ns. The initial transmission of the Cr4+:YAG has an effect on the pulse duration (FWHM) and the repetition rate of the Yb:YAG passively Q-switched laser. The Yb:YAG crystal can be a most promising passively Q-switched laser crystal for compact, efficient, solid-state lasers. (C) 2001 Optical Society of America.

激光二极管抽运的国产Yb:YAG陶瓷激光器

研究了国产Yb:YAG陶瓷的激光输出特性。激光器采用激光二极管(LD)纵向同轴抽运Yb:YAG陶瓷样品,样品的掺杂原子数分数为1%,一端面镀940 nm和1030 nm双增透膜,另一端面镀1030 nm增透膜,激光器在1031 nm处获得了近红外激光输出。实验中分别测试了Yb:YAG陶瓷在不同输出透射率(T=4%,8%,10%)条件下的激光输出特性。整个实验过程中,激光器维持基横模运转。当输出透射率为10%,吸收的抽运功率为9 W时,激光器获得最大的激光输出功率为1.63 W,相应的斜率效率为23.2%。

Yb:YAG/YAG复合陶瓷薄片连续和调Q输出特性

采用面泵浦的CAMIL结构，我们研究了970 nm泵浦的Yb:YAG/YAG复合陶瓷薄片激光器，获得了连续和调Q的激光输出。在连续运转情况下，获得了最高1.05 W的激光输出，中心波长为1031 nm，后腔输出镜透射率为2％。我们同时获得了声光调Q的脉冲输出，重复频率从1 kHz到30 kHz，脉宽分别从166 ns到700 ns。

双侧面90°抽运微通道致冷Yb：YAG板条激光器

报道了采用带有微柱镜的激光二极管阵列（LDA）双侧面90°排布抽运的Yb：YAG板条激光器，实验中使用的激光晶体尺寸为6mm×10mm×1mm，掺杂原子数分数为3％。抽运光通过自行设计的聚光系统聚焦成10mm×1mm的光斑进行抽运，聚光系统的效率为75％，晶体表面功率密度达到1．9kW／cm^2，晶体内抽运光交叠区的体功率密度达到38kW／cm^3，远高于阈值的1．7kW／cm^3。当激光器采用平一凹腔结构，耦合输出为6％时激光单脉冲输出能量最高为25．5mJ，斜率效率为13％。插入声光调Q晶体后获得4．

Efficient laser oscillation of Yb : Y3Al5O12 single crystal grown by temperature gradient technique

Low-threshold and highly efficient continuous-wave laser performance of Yb:Y3Al5O12 (Yb:YAG) single crystal grown by a temperature gradient technique (TGT) was achieved at room temperature. The laser can be operated at 1030 and 1049 nm by varying the transmission of the output coupler. Slope efficiencies of 57% and 68% at 1049 and 1030 nm, respectively, were achieved for 10 at. % Yb:YAG sample in continuous-wave laser-diode pumping. The effect of pump power on the laser emission spectrum of both wavelengths is addressed. The near-diffraction-limited beam quality for different laser cavities was achieved. The excellent laser performance indicates that TGT-grown Yb:YAG crystals have very good optical quality and can be potentially used in high-power solid-state lasers.

Temperature dependence of the 1.03 mu m stimulated emission cross section of Cr : Yb : YAG crystal

The fluorescence emission spectra of Cr:Yb:YAG crystal are measured and the effective stimulated emission cross section of the crystal are obtained from -80 degrees C to +80 degrees C. A linear temperature dependence between -80 degrees C and +80 degrees C is reported for the 1.03 mu m peak stimulated emission cross section of Cr:Yb:YAG crystal. (c) 2004 Elsevier B.V. All rights reserved.

不同Yb掺杂量的Yb：Y3Al5O12晶体的光谱分析

采用提拉法生长了Yb^3＋掺杂量分别为5．4at％，16．3at％，27．1at％，53．6at％和100at％的Yb：Y3Al5O12晶体．系统地表征和分析了Yb^3＋掺杂量对晶体吸收光谱和荧光光谱的影响．随着Yb^3＋掺杂量的增加，各峰值吸收系数呈线性增加的趋势．应用Smakula公式计算了各吸收峰对应的振荡强度，并分析了Yb^3＋掺杂量对振荡强度的影响．当Yb^3＋掺杂量增加到27．1at％时观察到了荧光猝灭现象；当Yb^3＋掺杂量增加到53．6at％时，荧光光谱的线形发生了很大的变化。

Color centers and charge state change in Ce : YAG crystals grown by temperature gradient techniques

Color centers and impurity defects of Ce:YAG crystals grown in reduction atmosphere by temperature gradient techniques have been investigated by means of gamma irradiation and thermal treatments. Four absorption bands associated with color centers or impurity defects at 235, 255, 294 and 370 nm were observed in as-grown crystals. Changes in optical intensity of the 235 and 370 nm bands after gamma irradiation indicate that they are associated with F+-type color center. Charge state change processes of Fe3+ impurity and Ce3+ ions take place in the irradiation process. The variations of Ce3+ ions concentration clearly indicate that Ce4+ ions exist in Ce:YAG crystals and gamma irradiations could increase the concentration of Ce3+ ions. Annealing treatments and the changes in optical density suggest that a heterovalent impurity ion associated with the 294 nm band seems to be present in the crystals. (c) 2005 Elsevier B.V. All rights reserved.

Cr,Yb:YAG晶体的自调Q激光性能

用光纤耦合激光二极管抽运Cr,Yb:YAG晶体获得了1.03 μm的自调Q激光输出,输出的调Q脉冲非常稳定,抽运阈值功率为680 mW,脉冲宽度为3.3 ns,获得的平均功率为156 mW,斜率效率为18.5%。随着抽运功率的增大,重复频率成线性增长,而脉宽略有减少,单脉冲能量和峰值功率都始终呈增大趋势。光束质量因子M2为1.17。