Thermal properties of single-phase Y2SiO5

Y2SiO5 is a promising candidate for oxidation-resistant or environmental/thermal barrier coatings (ETBC) due to its excellent high-temperature stability, low elastic modulus and low oxygen permeability. In this paper, we investigated the thermal properties of Y2SiO5 comprehensively, including thermal expansion, thermal diffusivity, heat capacity and thermal conductivity. It is interesting that Y2SiO5 has a very low thermal conductivity (∼1.40 W/m K) but a relatively high linear thermal expansion coefficient ((8.36 ± 0.5) × 10-6 K-1), suggesting compatible thermal and mechanical properties to some non-oxide ceramics and nickel superalloys as ETBC layer. Y2SiO5 is also an ideal EBC on YSZ TBC layer due to their close thermal expansion coefficients. As a continuous source of Y3+, it is predicted that Y2SiO5 EBC may prolong the lifetime of zirconia-based TBC by stopping the degradation aroused by the loss of Y stabilizer.

Effect of LiYO2 on the synthesis and pressureless sintering of Y2SiO5

Y2SiO5 has potential applications as a high-temperature structural ceramic and environmental/thermal barrier coating. In this work, we synthesized single-phase Y2SiO5 powders utilizing a solid-liquid reaction method with LiYO2 as an additive. The reaction path of the Y2O3/SiO2/LiYO2 mixture with variation in temperatures and the role of the LiYO2 additive on preparation process were investigated in detail. The powders obtained by this method have good sinterability. Through a pressureless sintering process, almost fully dense Y2SiO5 bulk material was achieved with a very high density of 99.7% theoretical.

Mechanical properties and damage tolerance of Y2SiO5

Y2SiO5 has potential applications as functional-structural ceramic and environmental/thermal barrier coating material. As an important grain-boundary phase in the sintered Si3N4, it also influences the mechanical and dielectric performances of the host material. In this paper, we present the mechanical properties of Y2SiO5 including elastic moduli, hardness, strength and fracture toughness, and try to understand the mechanical features from the viewpoint of crystal structure. Y2SiO5 has low shear modulus, low hardness, as well as high capacity for dispersing mechanical damage energy and for resisting crack penetration. Particularly, it can be machined by cemented carbides tools. The crystal structure characteristics of Y2SiO5 suggest the low-energy weakly bonded atomic planes crossed only by the easily breaking Y-O bonds as well as the rotatable rigid SiO4 tetrahedra are the origins of low shear deformation, good damage tolerance and good machinability of this material. TEM observations also demonstrate that the mechanical damage energy was dispersed in the form of the micro-cleavages, stacking faults and twins along these weakly bonded atomic planes, which allows the "microscale-plasticity" for Y2SiO5.

γ-辐照对纯Y2SiO5和Eu^3＋：Y2SiO5晶体光谱性能的影响

研究了γ-辐照前后纯Y2SiO5和Eu^3＋掺杂的Y2SiO5晶体吸收光谱的变化，辐照后，未退火和氢气退火的纯Y2SiO5晶体在260-270nm和320nm波段产生了附加吸收峰，分别是由F心和O^-心的吸收引起的；经过空气退火的纯YSO晶体中，由于消除了氧空位，因此辐照后没有出现色心吸收峰。在Eu^3＋；Y2SiO5晶体中，不但有相同的F心和O心吸收峰，而且还有Eu^2＋离子在300nm和390nm的吸收峰。随着辐照剂量的增加，色心附加吸收峰增强。空气退火能减少Eu^3＋：Y2SiO5晶体中的色心，而氢

Study on the growth, etch morphology and spectra of Y2SiO5 crystal

Undoped Y2SiO5 single crystal was grown by the Czochralski method. The samples were optically polished after orienting and cutting. The rhombus and quadrangular dislocation etching pits, the low-angle grain boundaries and the inclusions in the samples were observed using optical microscope and scanning electron microscope. The absorption spectra were measured before and after H-2 annealing or air annealing. The absorption edge of Y2SiO5 crystal was determined to be about 202 nm. The absorption coefficient of Y2SiO5 crystal decreased after H-2 annealing and obviously increased after air annealing. (C) 2005 Elsevier B.V. All rights reserved.

Effect of annealing and gamma irradiation on undoped and Eu3+-doped Y2SiO5 single crystals

The absorption spectra of the undoped Y2SiO5 and Eu3+-doped Y2SiO5 crystals grown by the Czochralski technique were compared before and after annealing and, similarly, the unannealed and annealed crystals after gamma-ray irradiation. The absorption bands of Eu2+ ions with peaks at 300 and 390 nm were observed in the as-grown Y2SiO5:Eu3+ crystal. These peaks were more intense in H-2-annealed and irradiated Y2SiO5:Eu3+ crystals. The additional absorption peaks at 260 and 320-330 nm which were attributed to F color centers and O- hole centers were observed in irradiated undoped Y2SiO5 and Y2SiO5:Eu3+ crystals, respectively. (c) 2005 Elsevier B.V. All rights reserved.

Effect of gamma-irradiation on spectral properties of undoped Y2SiO5 crystals

The absorption spectra of undoped Y2SiO5 crystals were studied before and after gamma-irradiation. After gamma-irradiation, the additional absorption peaks at 260-270 and 320nm were observed in as-grown and H,annealed Y2SiO5 crystal, but it did not occur in air-annealed Y2SiO5 crystal. These absorption peaks were attributed to F color centers and O- hole centers, respectively. Owing to more oxygen vacancies and color centers in H-2-annealed Y2SiO5 crystal than that in as-grown Y2SiO5 crystal after gamma-irradiation, the additional absorption peaks were more intense in the former than that in the latter. With the irradiation dose increasing from 20 to 220kGy, the intensity of additional absorption peaks increased.

Spectral hole-burning of Eu3+: Y2SiO5 crystal at 579.62 mm

By using an Ar+ ion laser, a tunable Rh 6G dye laser(Linewidth : 0.5 cm(-1)) and a Coherent 899-21 dye laser as light sources and using a monochromator and a phase-locking amplifier, the optical properties of Eu3+ : Y2SiO5 crystal were detected. Persistent spectral hole burning (PSHB) were also observed in (5)Do-(7)Fo transition in the crystal at the temperature of 16 K. For 15 mW dye laser (Wavelength : 579.62 nm) burning the crystal for 0.1 s a spectral hole with about 80 MHz hole width were detected and the hole can been keep for longer than 10 h.

579．62nm波长处Y2SiO5：Eu^3＋晶体永久性光谱烧孔

分别利用氩离子激光，二倍频YAG：Nd激光泵浦的诺明6G可调谐窄线宽（0．5cm^-1）染料激光和899-21可调谐染料激光作为光源，以单色仪-锁相放大器-光电倍增管-计算机数据采集系统记录光谱，对Y2SiO5：Eu^3＋晶体进行了光谱和光谱烧孔研究。在常温和液氮温度下测量了晶体的激发光谱、荧光光谱等。在16K温度下对晶体进行了光谱烧孔研究，得到了孔宽约80MHz并能保存10h的永久性光谱孔。

One-Dimensional Ce3+- and/or Tb3+-Doped X-1-Y2SiO5 Nanofibers and Microbelts: Electrospinning Preparation and Luminescent Properties

One-dimensional X-1-Y2SiO5:Ce3+ and -Tb3+ nanofibers and quasi-one-dimensional X-1-Y2SiO5:Ce3+ and -Tb3+ microbelts have been prepared by a simple and cost-effective electrospinning process. X-ray powder diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry, transmission electron microscopy, high-resolution transmission electron microscopy, photoluminescence (PL), and cathodoluminescence spectra were used to characterize the samples. SEM results indicate that the as-prepared fibers and belts are smooth and uniform with a length of several tens to hundreds of micrometers, whose diameters decrease after being annealed at 1000 degrees C for 3 h. Under ultraviolet excitation and low-voltage electron beam excitation, the doped rare earth ions show their characteristic emission, that is, Ce3+ 5d-4f and Tb3+ D-5(4)-F-7(J) (J = 6, 5 4, 3) transitions, respectively.

Fabrication, patterning and luminescence properties of X-2-Y2SiO5 : A (A = Eu3+, Tb3+, Ce3+) phosphor films via sol-gel soft lithography

X-2-y(2)SiO(5):A (A = Eu3+, Tb3+, Ce3+) phosphor films and their patterning were fabricated by a sol-gel process combined with a soft lithography. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), atomic force microscopy (AFM), scanning electron microscopy (SEM) optical microscopy and photoluminescence (PL) were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 900 degreesC with X-1-Y2SiO5, which transformed completely to X-2-Y2SiO5 at 1250 degreesC. Patterned thin films with different band widths (5 pin spaced by 5 pm and 16 pm spaced by 24 pm) were obtained by a soft lithography technique (micromoulding in capillaries, MIMIC). The SEM and AFM study revealed that the nonpattemed phosphor films were uniform and crack free, and the films mainly consisted of closely packed grains with an average size of 350 run. The doped rare earth ions (A) showed their characteristic emissions in X-2-Y2SiO5 phosphor films, i.e., D-5(0)-F-7(J) (J = 0, 1, 2,3,4) for Eu3+, D-5(3), (4)-F-7(J) (J = 6, 5, 4, 3) for Tb3+ and 5d (D-2)-4f (F-2(2/5),(2/7)) for Ce3+, respectively. The optimum doping concentrations for EU3+, Tb3+ were determined to be 13 and 8 mol% of Y3+ in X-2-Y2SiO5 films, respectively.

Silica supported submicron SiO2@Y2SiO5 : Eu3+ and SiO2@Y2SiO5 : Ce3+/Tb3+ spherical particles with a core-shell structure: Sol-gel synthesis and characterization

X-1-y(2)SiO(5):Eu3+ and X-1-Y2SiO5:Ce3+ and/or Tb3+ phosphor layers have been coated on nonaggregated, monodisperse, submicron spherical SiO2 particles by a sol-gel process, followed by surface reaction at high temperature (1000 degrees C), to give core/shell structured SiO2@Y2SiO5:Eu3+ and SiO2@Y2SiO5:Ce3+/Tb3+ particles. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), TEM, photoluminescence (PL), low voltage cathodoluminescence (CL), and time-resolved PL spectra and lifetimes are used to characterize these materials. The XRD results indicate that X-1-Y2SiO5 layers have been successfully coated on the sur- face Of SiO2 particles, as further verified by the FESEM and TEM images. The PL and CL studies suggest that SiO2@Y2SiO5:Eu3+, SiO2@Y2SiO5:Tb3+ (or Ce3+/Tb3+), and SiO2@Y2SiO5:Ce3+ core/shell particles exhibit red (Eu3+, 613 rim: D-5(0)-F-7(2)), green (Tb3+, 542nm: D-5(4)-F-7(5)), or blue (Ce3+, 450nm: 5d-4f) luminescence, respectively. Pl, excitation, emission, and time-resolved spectra demonstrate that there is an energy transfer from Ce3+ to Tb3+ in the SiO2@Y2SiO5:Ce3+,Tb3+ core/shell particles.

Influence of crystal structure on the luminescence properties of bismuth(III), europium(III) and dysprosium(III) in Y2SiO5

The luminescence properties of Bi3+, EU(3+), Dy3+ and energy transfer from Bi3+ to Dy3+ and EU(3+) have been studied in two modifications of Y2SiO5 (low-temperature X(1) type and high-temperature X(2) type) and discussed in relation to their crystal structures. The Bi3+ ion luminesces in the blue region of the spectrum in X(1)-Y2SiO5 but in the UV region in X(2)-Y2SiO5. Two obviously different luminescent centres have been observed for Bi3+ and Eu3+ ill X(1)-Y2SiO5, but only one has been seen in X(2)-Y2SiO5. The Stokes shift (9200 cm(-1)) for Bi3+ in X(1)-Y2SiO5 is much larger than that (5000 cm(-1)) in X(2)-Y2SiO5. This suggests that the host lattice is more rigid in X(2)-Y2SiO5 than in X(1)-Y2SiO5. As a result, the Bi3+, EU(3+) and Dy3+ ions show higher emission intensity in the former than in the latter type. X(1)-Y2SiO5 is more suitable for Bi3+ --> EU(3+) energy transfer and X(2)-Y2SiO5 is more suitable for Bi3+ --> Dy3+ energy transfer.

Crystal structure dependence of the luminescence of rare earth ions (Ce3+, Tb3+, Sm3+) in Y2SiO5

The luminescence properties of Ce3+, Tb3+, Sm3+ and energy transfer from Ce3+ to Tb3+ were studied in two modifications of Y2SiO5 (low temperature X(1) type and high temperature X(2) type). The Ce3+ cation shows lower emission energy and larger Stokes shift in X(1)-Y2SiO5 than in X(2)-Y2SiO5, and the emission intensities of Ce3+, Tb3+, Sm3+ in the former are weaker than those in the latter. There exists an energy transfer from Ce3+ to Tb3+ in both types of Y2SiO5, and the transfer efficiency in X(2) type is higher than that in X(1) type. All of these results are discussed in relation to the crystal structure of Y2SiO5.

Recent progress on synthesis, multi-scale structure, and properties of Y-Si-O oxides

Yttrium silicates (Y-Si-O oxides), including Y2Si2O7, Y2SiO5, and Y4·67(SiO4)3O apatite, have attracted wide attentions from material scientists and engineers, because of their extensive polymorphisms and important roles as grain boundary phases in improving the high-temperature mechanical/thermal properties of Si3N4and SiC ceramics. Recent interest in these materials has been renewed by their potential applications as high-temperature structural ceramics, oxidation protective coatings, and environmental barrier coatings (EBCs). The salient properties of Y-Si-O oxides are strongly related to their unique chemical bonds and microstructure features. An in-depth understanding on the synthesis - multi-scale structure-property relationships of the Y-Si-O oxides will shine a light on their performance and potential applications. In this review, recent progress of the synthesis, multi-scale structures, and properties of the Y-Si-O oxides are summarised. First, various methods for the synthesis of Y-Si-O ceramics in the forms of powders, bulks, and thin films/coatings are reviewed. Then, the crystal structures, chemical bonds, and atomic microstructures of the polymorphs in the Y-Si-O system are summarised. The third section focuses on the properties of Y-Si-O oxides, involving the mechanical, thermal, dielectric, and tribological properties, their environmental stability, and their structure-property relationships. The outlook for potential applications of Y-Si-O oxides is also highlighted.