Design Optimization of Thin-Film Transistors Based on a Metal-Substrate-Semiconductor Architecture for High DC Voltage Sensing

We discuss the potential application of high dc voltage sensing using thin-film transistors (TFTs) on flexible substrates. High voltage sensing has potential applications for power transmission instrumentation. For this, we consider a gate metal-substrate-semiconductor architecture for TFTs. In this architecture, the flexible substrate not only provides mechanical support but also plays the role of the gate dielectric of the TFT. Hence, the thickness of the substrate needs to be optimized for maximizing transconductance, minimizing mechanical stress, and minimizing gate leakage currents. We discuss this optimization, and develop n-type and p-type organic TFTs using polyvinyldene fluoride as the substrate-gate insulator. Circuits are also realized to achieve level shifting, amplification, and high drain voltage operation.

Voltage sensing buck converter-based technique for maximum photovoltaic solar energy delivery

A voltage sensing buck converter-based technique for maximum solar power delivery to a load is presented. While retaining the features and advantages of the incremental conductance algorithm, this technique is more desirable because of single sensor use. The technique operates by maximising power at the buck converter output instead of the input.

Voltage Sensing Using an Asynchronous Charge-to-Digital Converter for Energy-Autonomous Environments

In future systems with relatively unreliable and unpredictable energy sources such as harvesters, the system power supply may become non-deterministic. For energy effective operations, Vdd is an important parameter in any meaningful system control mechanism. Reliable and accurate on-chip voltage sensors are therefore indispensible for the power and computation management of such systems. Existing voltage sensing methods are not suitable because they usually require a stable and known reference (voltage, current, time, frequency, etc.), which is difficult to obtain in this environment. This paper describes an autonomous reference-free voltage sensor designed using an asynchronous counter powered by the charge on a capacitor and a small controller. Unlike existing methods, the voltage information is directly generated as a digital code. The sensor, fabricated in the 180 nm technology node, was tested successfully through performing measurements over the voltage range from 1.8 V down to 0.8 V.

A voltage-sensorless control method to balance the input currents of a three-wire boost rectifier under unbalanced input voltages condition

This paper proposes a control method that can balance the input currents of the three-phase three-wire boost rectifier under unbalanced input voltage condition. The control objective is to operate the rectifier in the high-power-factor mode under balanced input voltage condition but to give overriding priority to the current balance function in case of unbalance in the input voltage. The control structure has been divided into two major functional blocks. The inner loop current-mode controller implements resistor emulation to achieve high-power-factor operation on each of the two orthogonal axes of the stationary reference frame. The outer control loop performs magnitude scaling and phase-shifting operations on current of one of the axes to make it balanced with the current on the other axis. The coefficients of scaling and shifting functions are determined by two closed-loop prportional-integral (PI) controllers that impose the conditions of input current balance as PI references. The control algorithm is simple and high performing. It does not require input voltage sensing and transformation of the control variables into a rotating reference frame. The simulation results on a MATLAB-SIMULINK platform validate the proposed control strategy. In implementation Texas Instrument's digital signal processor TMS320F24OF is used as the digital controller. The control algorithm for high-power-factor operation is tested on a prototype boost rectifier under nominal and unbalanced input voltage conditions.

The evolving capabilities of rhodopsin-based genetically encoded voltage indicators.

Protein engineering over the past four years has made rhodopsin-based genetically encoded voltage indicators a leading candidate to achieve the task of reporting action potentials from a population of genetically targeted neurons in vivo. Rational design and large-scale screening efforts have steadily improved the dynamic range and kinetics of the rhodopsin voltage-sensing domain, and coupling these rhodopsins to bright fluorescent proteins has supported bright fluorescence readout of the large and rapid rhodopsin voltage response. The rhodopsin-fluorescent protein fusions have the highest achieved signal-to-noise ratios for detecting action potentials in neuronal cultures to date, and have successfully reported single spike events in vivo. Given the rapid pace of current development, the genetically encoded voltage indicator class is nearing the goal of robust spike imaging during live-animal behavioral experiments.

Étude structurale et fonctionnelle du canal potassium dépendant du voltage KvAP

Les canaux ioniques dépendants du voltage sont responsables de l'initiation et de la propagation des potentiels d'action dans les cellules excitables. De nombreuses maladies héréditaires (channelopathies) sont associées à un contrôle défectueux du voltage par ces canaux (arythmies, épilepsie, etc.). L’établissement de la relation structure-fonction exacte de ces canaux est donc crucial pour le développement de nouveaux agents thérapeutiques spécifiques. Dans ce contexte, le canal procaryote dépendant du voltage et sélectif au potassium KvAP a servi de modèle d’étude afin d’approfondir i) le processus du couplage électromécanique, ii) l’influence des lipides sur l’activité voltage-dépendante et iii) l’inactivation de type closed-state. Afin de pallier à l’absence de données structurales dynamiques du côté cytosolique ainsi que de structure cristalline dans l’état fermé, nous avons mesuré le mouvement du linker S4-S5 durant le gating par spectroscopie de fluorescence (LRET). Pour ce faire, nous avons utilisé une technique novatrice du contrôle de l’état conformationnel du canal en utilisant les lipides (phospholipides et non phospholipides) au lieu du voltage. Un modèle dans l’état fermé a ainsi été produit et a démontré qu’un mouvement latéral modeste de 4 Å du linker S4-S5 est suffisant pour mener à la fermeture du pore de conduction. Les interactions lipides - canaux jouent un rôle déterminant dans la régulation de la fonction des canaux ioniques mais ne sont pas encore bien caractérisées. Nous avons donc également étudié l’influence de différents lipides sur l’activation voltage - dépendante de KvAP et mis en évidence deux sites distincts d’interactions menant à des effets différents : au niveau du senseur de voltage, menant au déplacement de la courbe conductance-voltage, et du côté intracellulaire, influençant le degré de la pente de cette même courbe. Nous avons également démontré que l’échange de lipides autour de KvAP est extrêmement limité et affiche une dépendance à l’état conformationnel du canal, ne se produisant que dans l’état ouvert. KvAP possède une inactivation lente particulière, accessible depuis l'état ouvert. Nous avons étudié les effets de la composition lipidique et de la température sur l'entrée dans l'état inactivé et le temps de récupération. Nous avons également utilisé la spectroscopie de fluorescence (quenching) en voltage imposé afin d'élucider les bases moléculaires de l’inactivation de type closed-state. Nous avons identifié une position à la base de l’hélice S4 qui semble impliquée à la fois dans le mécanisme responsable de ce type d'inactivation et dans la récupération particulièrement lente qui est typique du canal KvAP.

Outward Rectification of Voltage-Gated K+ Channels Evolved at Least Twice in Life History

Voltage-gated potassium (K+) channels are present in all living systems. Despite high structural similarities in the transmembrane domains (TMD), this K+ channel type segregates into at least two main functional categories—hyperpolarization-activated, inward-rectifying (Kin) and depolarization-activated, outward-rectifying (Kout) channels. Voltage-gated K+ channels sense the membrane voltage via a voltage-sensing domain that is connected to the conduction pathway of the channel. It has been shown that the voltage-sensing mechanism is the same in Kin and Kout channels, but its performance results in opposite pore conformations. It is not known how the different coupling of voltage-sensor and pore is implemented. Here, we studied sequence and structural data of voltage-gated K+ channels from animals and plants with emphasis on the property of opposite rectification. We identified structural hotspots that alone allow already the distinction between Kin and Kout channels. Among them is a loop between TMD S5 and the pore that is very short in animal Kout, longer in plant and animal Kin and the longest in plant Kout channels. In combination with further structural and phylogenetic analyses this finding suggests that outward-rectification evolved twice and independently in the animal and plant kingdom.

Distance measurement using the change in junction voltage across a laser diode due to the self-mixing effect

Conventional detection scheme for self-mixing sensors uses an integrated photodiode within the laser package to monitor the self mixing signal. This arrangement can be simplified by directly obtaining the self-mixing signals across the laser diode itself and omitting the photodiode. This work reports on a Vertical-Cavity Surface-Emitting Laser (VCSEL) based selfmixing sensor using the laser junction voltage to obtain the selfmixing signal. We show that the same information can be obtained with only minor changes to the extraction circuitry leading to potential cost saving with reductions in component costs and complexity and significant increase in bandwidth favoring high speed modulation. Experiments using both photo current and voltage detection were carried out and the results obtained show good agreement with the theory.

A Rotor Flux Estimation During Zero and Active Vector Periods Using Current Error Space Vector From a Hysteresis Controller for a Sensorless Vector Control of IM Drive

This paper proposes a sensorless vector control scheme for general-purpose induction motor drives using the current error space phasor-based hysteresis controller. In this paper, a new technique for sensorless operation is developed to estimate rotor voltage and hence rotor flux position using the stator current error during zero-voltage space vectors. It gives a comparable performance with the vector control drive using sensors especially at a very low speed of operation (less than 1 Hz). Since no voltage sensing is made, the dead-time effect and loss of accuracy in voltage sensing at low speed are avoided here, with the inherent advantages of the current error space phasor-based hysteresis controller. However, appropriate device on-state drops are compensated to achieve a steady-state operation up to less than 1 Hz. Moreover, using a parabolic boundary for current error, the switching frequency of the inverter can be maintained constant for the entire operating speed range. Simple sigma L-s estimation is proposed, and the parameter sensitivity of the control scheme to changes in stator resistance, R-s is also investigated in this paper. Extensive experimental results are shown at speeds less than 1 Hz to verify the proposed concept. The same control scheme is further extended from less than 1 Hz to rated 50 Hz six-step operation of the inverter. Here, the magnetic saturation is ignored in the control scheme.

Analog Signal Acquisition and Conditioning for Near-Field Capacitive Communication and Active Combined EEG-EIT Monitoring

The work of the present thesis is focused on the implementation of microelectronic voltage sensing devices, with the purpose of transmitting and extracting analog information between devices of different nature at short distances or upon contact. Initally, chip-to-chip communication has been studied, and circuitry for 3D capacitive coupling has been implemented. Such circuits allow the communication between dies fabricated in different technologies. Due to their novelty, they are not standardized and currently not supported by standard CAD tools. In order to overcome such burden, a novel approach for the characterization of such communicating links has been proposed. This results in shorter design times and increased accuracy. Communication between an integrated circuit (IC) and a probe card has been extensively studied as well. Today wafer probing is a costly test procedure with many drawbacks, which could be overcome by a different communication approach such as capacitive coupling. For this reason wireless wafer probing has been investigated as an alternative approach to standard on-contact wafer probing. Interfaces between integrated circuits and biological systems have also been investigated. Active electrodes for simultaneous electroencephalography (EEG) and electrical impedance tomography (EIT) have been implemented for the first time in a 0.35 um process. Number of wires has been minimized by sharing the analog outputs and supply on a single wire, thus implementing electrodes that require only 4 wires for their operation. Minimization of wires reduces the cable weight and thus limits the patient's discomfort. The physical channel for communication between an IC and a biological medium is represented by the electrode itself. As this is a very crucial point for biopotential acquisitions, large efforts have been carried in order to investigate the different electrode technologies and geometries and an electromagnetic model is presented in order to characterize the properties of the electrode to skin interface.

Intramembrane charge movements and excitation– contraction coupling expressed by two-domain fragments of the Ca2+ channel

To investigate the molecular basis of the voltage sensor that triggers excitation–contraction (EC) coupling, the four-domain pore subunit of the dihydropyridine receptor (DHPR) was cut in the cytoplasmic linker between domains II and III. cDNAs for the I-II domain (α1S 1–670) and the III-IV domain (α1S 701-1873) were expressed in dysgenic α1S-null myotubes. Coexpression of the two fragments resulted in complete recovery of DHPR intramembrane charge movement and voltage-evoked Ca2+ transients. When fragments were expressed separately, EC coupling was not recovered. However, charge movement was detected in the I-II domain expressed alone. Compared with I-II and III-IV together, the charge movement in the I-II domain accounted for about half of the total charge (Qmax = 3 ± 0.23 vs. 5.4 ± 0.76 fC/pF, respectively), and the half-activation potential for charge movement was significantly more negative (V1/2 = 0.2 ± 3.5 vs. 22 ± 3.4 mV, respectively). Thus, interactions between the four internal domains of the pore subunit in the assembled DHPR profoundly affect the voltage dependence of intramembrane charge movement. We also tested a two-domain I-II construct of the neuronal α1A Ca2+ channel. The neuronal I-II domain recovered charge movements like those of the skeletal I-II domain but could not assist the skeletal III-IV domain in the recovery of EC coupling. The results demonstrate that a functional voltage sensor capable of triggering EC coupling in skeletal myotubes can be recovered by the expression of complementary fragments of the DHPR pore subunit. Furthermore, the intrinsic voltage-sensing properties of the α1A I-II domain suggest that this hemi-Ca2+ channel could be relevant to neuronal function.

Mutation of conserved negatively charged residues in the S2 and S3 transmembrane segments of a mammalian K+ channel selectively modulates channel gating.

Voltage-gated channel proteins sense a change in the transmembrane electric field and respond with a conformational change that allows ions to diffuse across the pore-forming structure. Site-specific mutagenesis combined with electrophysiological analysis of expressed mutants in amphibian oocytes has previously established the S4 transmembrane segment as an element of the voltage sensor. Here, we show that mutations of conserved negatively charged residues in S2 and S3 of a brain K+ channel, thought of as countercharges for the positively charged residues in S4, selectively modulate channel gating without modifying the permeation properties. Mutations of Glu235 in S2 that neutralize or reverse charge increase the probability of channel opening and the apparent gating valence. In contrast, replacements of Glu272 by Arg or Thr268 by Asp in S3 decrease the open probability and the apparent gating valence. Residue Glu225 in S2 tolerated replacement only by acidic residues, whereas Asp258 in S3 was intolerant to any attempted change. These results imply that S2 and S3 are unlikely to be involved in channel lining, yet, together with S4, may be additional components of the voltage-sensing structure.

Desenvolvimento de célula Pockels na topologia reflexiva aplicada a TP óptico de alta tensão.

O trabalho aborda o estudo e o desenvolvimento de um interferômetro sensor de alta tensão, baseado em célula Pockels (modulador eletro-óptico) na topologia reflexiva (\"double pass\") e que é parte integrante de um Transformador de Potencial Óptico (TPO), que utiliza sistema interferométrico de luz branca (WLI-White Light Interferometry), que está sendo desenvolvido pelo grupo do Laboratório de Sensores Ópticos (LSO) do PEA-EPUSP, e é capaz de medir diretamente tensões presentes em sistema elétrico de potência (SEP) classe 69kVRMS. Para desenvolver o tema proposto foi feita uma revisão da literatura baseada em livros, artigos e teses para identificar topologias em moduladores eletro-ópticos transmissiva (\"single pass\") e reflexiva (\"double pass\") para definir o tipo de modulador mais adequado para a aplicação em questão. A partir dos estudos e implementações realizadas, verificou-se um enorme potencial para o desenvolvimento e aplicação da topologia \"double pass\" no sensor interferométrico da célula de alta tensão do TPO. A topologia mostrou-se vantajosa em relação aos protótipos dos TPOs desenvolvidos anteriormente, a partir de características tais como: a facilidade de recurso de alinhamento do feixe de luz, construção e reprodução relacionados ao cristal eletro-óptico, diminuição do número de componentes ópticos volumétricos e aumento da rigidez dielétrica da célula sensora. Simulações computacionais foram realizadas mediante a aplicação do método dos elementos finitos (MEF) que contribuíram para o auxílio do projeto da célula sensora, particularmente, para estimativa do valor da voltagem de meia onda, V?, parâmetro importante para o projeto do TPO. Um protótipo do TPO com célula sensora de alta tensão reflexiva foi implementado e testado no laboratório de alta tensão do IEEUSP a partir de ensaios com tensões nominais de 69kVrms a 60Hz e máxima de 140kVrms a 60 Hz. Como resultado deste trabalho, amplia-se o conhecimento e domínio das técnicas de construção de interferômetros sensores de alta tensão na topologia reflexiva aplicadas a TPOs.

Reversed bias Pt/nanostructured ZnO Schottky diode with enhanced electric field for hydrogen sensing

In this paper, the effect of electric field enhancement on Pt/nanostructured ZnO Schottky diode based hydrogen sensors under reverse bias condition has been investigated. Current-voltage characteristics of these diodes have been studied at temperatures from 25 to 620 °C and their free carrier density concentration was estimated by exposing the sensors to hydrogen gas. The experimental results show a significantly lower breakdown voltage in reversed bias current-voltage characteristics than the conventional Schottky diodes and also greater lateral voltage shift in reverse bias operation than the forward bias. This can be ascribed to the increased localized electric fields emanating from the sharp edges and corners of the nanostructured morphologies. At 620 °C, voltage shifts of 114 and 325 mV for 0.06% and 1% hydrogen have been recorded from dynamic response under the reverse bias condition. © 2010 Elsevier B.V. All rights reserved.

Platinum/graphene nanosheet/SiC contacts and their application for hydrogen gas sensing

Pt/graphene nanosheet/SiC based devices are fabricated and characterized and their performances toward hydrogen gas are investigated. The graphene nanosheets are synthesized via the reduction of spray-coated graphite oxide deposited onto SiC substrates. Raman and X-ray photoelectron spectroscopies indicate incomplete reduction of the graphite oxide, resulting in partially oxidized graphene nanosheet layers of less than 10 nm thickness. The effects of interfaces on the nonlinear behavior of the Pt/graphene and graphene/SiC junctions are investigated. Current-voltage measurements of the sensors toward 1% hydrogen in synthetic air gas mixture at various temperatures ranging up to 100. ° C are performed. From the dynamic response, a voltage shift of ∼100 mV is recorded for 1% hydrogen at a constant current bias of 1 mA at 100. °C. © 2010 American Chemical Society.