Multilayer Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3/Bi1.5Zn1.0Nb1.5O7 thin films for tunable microwave applications

Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3/Bi1.5Zn1.0Nb1.5O7 tunable multilayer thin film has been fabricated by pulsed laser ablation and characterized. Phase composition and microstructure of multilayer films were characterized by X-ray diffraction, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The film has very smooth surface with RMS roughness of 1.5-2nm and grain size of 100-150 nm. Total film thickness has been measure to be 375 nm. The BZN thin films at 300 K, on Pt(1 1 1)/SiO2/Si substrate showed zero-field dielectric constant of 105 and dielectric loss tangent of 0.002 at frequency of 0.1 MHz. Thin films annealed at 700 degrees C shows the dielectric tunability of 18% with biasing field 500 kV/cm at 0.1 MHz. The multilayer thin film shows nonferroelectric behavior at room temperature. The good physical and electrical properties of multilayer thin films make them promising candidate for tunable microwave device applications. (C) 2010 Elsevier B.V. All rights reserved.

Design of carbon nanotubes based microwave applications employing mechanical resonance analysis

Carbon nanotubes (CNTs) have good mechanical properties and unique structural, electronic, thermal, and optical characteristics. In this work, we present the results of our investigations of a resonator device based on embedded vertical CNT arrays. The device's design is based on the mechanical resonance of the tubes. CoventorWare FEA tools have been used to simulate the mechanical resonance frequencies of the vertical nanotubes arrays integrated on a silicon substrate. ©2008 IEEE.

Optical emission spectroscopy of the plasma during sputter deposition of YBCO films for microwave applications

YBCO thin films are currently used in several HTS-based electronics applications. The performance of devices, which may include microwave passive components (filters, resonators), grain boundary junctions or spintronic multilayer structures, is determined by film quality, which in turn depends on the deposition technology used and growth parameters. We report on results from nonintrusive Optical Emission Spectroscopy of the plasma during YBCO thin film deposition in a high-pressure on-axis sputtering system under different conditions, including small trace gas additions to the sputtering gas. We correlate these results with the compositional and structural changes which affect the DC and microwave properties of YBCO films. Film morphology, composition, structure and in- and out-of-plane orientation were assessed; T, and microwave surface resistance measurements were made using inductive and resonator techniques. Comparison was made with films sputtered in an off-axis 2-opposing magnetron system.

Ultra-thin tunable microwave absorber using liquid crystals

A dynamically adaptive radar absorber is described which is based on a periodic array of microstrip patches that are printed on a 500 mu m-thick liquid crystal substrate. The measured reflectivity of the structure is less than -38 dB with a 200 MHz -10 dB bandwidth at 10.19 GHz when a +4 DC bias is applied. It is shown that a 34 dB reduction in signal loss occurs when the bias voltage is increased to 20 V.

Dielectric tunability in (1-x)[Pb(Mg 1/3Nb 2/3)O 3]-xPbTiO 3 ceramics for tunable devices application

The dielectric properties of the 0.65[Pb(Mg 1/3Nb 2/3)O 3]-0.35PbTiO 3 ferroelectric ceramic composition were investigated viewing the capability to be used for tunable microwave applications. The dielectric response has been studied for three selected temperatures (300 K, 370 K and 400 K), below the paraelectric- ferroelectric phase transition temperature, as a function of the applied 'bias' electric field. The obtained dielectric tunability was found to be around 60 %, under an electric field of 19 kV/cm, which makes the studied ceramic composition an excellent candidate for application in the electro-electronic industry, as tunable devices. © 2010 IEEE.

Ku band transmitarray lens for microwave applications

In this document a microstrip constrained lens device for Ku band, for microwave purpose, is presented. This paper offers an overview of artificial lens-type devices and the proposed transmitarray lens is thoroughly studied in terms of design and manufacturing, with architecture discussion and selection, along with the design, manufacturing and validation of all the forming components of the transmitarray (transmission circuits, radiating elements, etc.). Each element is properly characterized and assembled properly in the complete transmitarray prototype. Eventually, radiation pattern measurements as well as gain and directivity values, are provided to show the proper behaviour of the proposed transmitarray lens.

Investigation of an optically reconfigurable plasma for silicon based microwave applications

This paper investigates the use of photoconductive plasmas for controlling microwave circuits and antennas on semiconductor substrates. Initial experiments show that significant changes in the reflection coefficient characteristics can be obtained by varying the length of a photo-illuminated plasma region from 0 to 2mm. The resulting structure forms the basis for further experiments involving tuneable microwave devices. © 2013 European Microwave Association.

Magnetically Biased Graphene Based Switches for Microwave Applications

This paper presents a magnetically biased graphene based switch for CPW resonator applications. Graphene patches are set in the gap between signal and ground lines, thus obtaining the whole structures act as switchable elements. Graphene was modeled as a general material with appropriate surface conductivity. The presented CPW resonator structure acts like a switch in ON state even for magnetic bias field of around 0.5 T. The simulated S parameters of the CPW resonator structure with different magnetic field biasing are presented.

Optical and dielectric relaxor behaviour of Ba(Zr(0.25)Ti(0.75))O(3) ceramic explained by means of distorted clusters

In this work, Ba(Zr(0.25)Ti(0.75))O(3) ceramic was prepared by solid-state reaction. This material was characterized by x-ray diffraction and Fourier transform Raman spectroscopy. The temperature dependent dielectric properties were investigated in the frequency range from 1 kHz to 1 MHz. The dielectric measurements indicated a diffuse phase transition. The broadening of the dielectric permittivity in the frequency range as well as its shifting at higher temperatures indicated a relaxor-like behaviour for this material. The diffusivity and the relaxation strength were estimated using the modified Curie-Weiss law. The optical properties were analysed by ultraviolet-visible (UV-vis) absorption spectroscopy and photoluminescence (PL) measurements at room temperature. The UV-vis spectrum indicated that the Ba(Zr(0.25)Ti(0.75))O(3) ceramic has an optical band gap of 2.98 eV. A blue PL emission was observed for this compound when excited with 350 nm wavelength. The polarity as well as the PL property of this material was attributed to the presence of polar [TiO(6)] distorted clusters into a globally cubic matrix.

Simulation and implementation of a tunable C-band dielectric resonator oscillator

Microwave sources used in present day applications are either multiplied source derived from basic quartz crystals, or frequency synthesizers. The frequency multiplication method increases FM noise power considerably, and has very low efficiency in addition to being very complex and expensive. The complexity and cost involved demands a simple, compact and tunable microwave source. A tunable dielectric resonator oscillator(DRO) is an ideal choice for such applications. In this paper, the simulation, design and realization of a tunable DRO with a center frequency of 6250 MHz is presented. Simulation has been carried out on HP-Ees of CAD software. Mechanical and electronic tuning features are provided. The DRO operates over a frequency range of 6235 MHz to 6375 MHz. The output power is +5.33 dBm at centre frequency. The performance of the DRO is as per design with respect to phase noise, harmonic levels and tunability. and hence, can conveniently be used for the intended applications.

Properties and applications of injection locking in 1.55 μm quantum-dash mode-locked semiconductor lasers

Mode-locked semiconductor lasers are compact pulsed sources with ultra-narrow pulse widths and high repetition-rates. In order to use these sources in real applications, their performance needs to be optimised in several aspects, usually by external control. We experimentally investigate the behaviour of recently-developed quantum-dash mode-locked lasers (QDMLLs) emitting at 1.55 μm under external optical injection. Single-section and two-section lasers with different repetition frequencies and active-region structures are studied. Particularly, we are interested in a regime which the laser remains mode-locked and the individual modes are simultaneously phase-locked to the external laser. Injection-locked self-mode-locked lasers demonstrate tunable microwave generation at first or second harmonic of the free-running repetition frequency with sub-MHz RF linewidth. For two-section mode-locked lasers, using dual-mode optical injection (injection of two coherent CW lines), narrowing the RF linewidth close to that of the electrical source, narrowing the optical linewidths and reduction in the time-bandwidth product is achieved. Under optimised bias conditions of the slave laser, a repetition frequency tuning ratio >2% is achieved, a record for a monolithic semiconductor mode-locked laser. In addition, we demonstrate a novel all-optical stabilisation technique for mode-locked semiconductor lasers by combination of CW optical injection and optical feedback to simultaneously improve the time-bandwidth product and timing-jitter of the laser. This scheme does not need an RF source and no optical to electrical conversion is required and thus is ideal for photonic integration. Finally, an application of injection-locked mode-locked lasers is introduced in a multichannel phase-sensitive amplifier (PSA). We show that with dual-mode injection-locking, simultaneous phase-synchronisation of two channels to local pump sources is realised through one injection-locking stage. An experimental proof of concept is demonstrated for two 10 Gbps phase-encoded (DPSK) channels showing more than 7 dB phase-sensitive gain and less than 1 dB penalty of the receiver sensitivity.

”Studies on Selected conducting polymers for Microwave and Electrical Applications

The electrical properties of polymers make up an inherently interdisciplinary topic, being closely associated, on the one hand, with the mechanical properties of polymers polarization and relaxation) and, on the other hand, with the semi conductive properties (conduction and break down). In addition, unlike conventional technologies, which use these properties in its various applications like antistatic coatings, rechargeable batteries, sensors, electrochromic devices, electrochemical devices etc, microwave technology extract the microwave absorbing ability of electrically conducting polymers. The conducting polymers are widely used in its potential applications like electro magnetic interference shielding, satellite communication links, beam steering radars, frequency selective surfaces etc. Considering the relevance of microwave applications of conducting polymers, the study of microwave properties of conducting polymers stands poised to become a compelling choice for synthetic chemists and condensed - matter physicists, physical chemists and material scientists, electrochemists and polymer scientists. The main aim of the present work is to study the microwave and low frequency properties of various conducting polymers, conducting semi-interpenetrating networks, conducting copolymers and to characterise it. Also this thesis collated the microwave properties of these conducting systems and exposes the various technologically important applications in the industrial, scientific, communication and defence applications.